GBPC25 SEMICONDUCTOR RoHS RoHS Nell High Power Products Glass Passivated Single-Phase Bridge Rectifier, 25A GBPC2506 Thru GBPC2512 FEATURES UL recognition file number E320098 Universal 3-way terminals: snap-on, wire wrap-around, or PCB mounting Typical IR less than 1.0 µA GBPC-W GBPC ~ High surge current capability + Low thermal resistance Solder dip 260°C, 40s - ~ Compliant to RoHS + ~ Glass passivated chips TYPICAL APPLICATIONS - General purpose use in AC/DC bridge full wave rectification for power supply, home appliances, ~ office equipment, industrial automation applications. MECHANICAL DATA Case: GBPC, GBPC-W Epoxy meets UL 94 V-O flammability rating Terminals: Nickel plated on faston lugs or silver plated on wire leads,solderable per J-STD-002 and JESD22-B102. Suffix letter “W” added to indicate wire leads(e.g. GBPC2506W). Polarity: As marked,positive lead by belevled corner Mounting Torque: 20 inches-lbs. max. (M5 screw) Weight: 14g (0.49 ozs) - ~ ~ + GBPC GBPC-W 28.6 28.6 18.1 18.1 18.1 Ø5.3 28.6 11.4 28.6 14.3 16.6 12.2 Ø5.3 16.6 1.0(x4) 0.8 6.35 Ø2.4 32~34 20 7.7 All dimensions in millimeters www.nellsemi.com Page 1 of 4 7.7 GBPC25 SEMICONDUCTOR RoHS RoHS Nell High Power Products PRIMARY CHARACTERRISTICS IF(AV) 25A V RRM 600V to 1200V I FSM 310A IR 5 µA VF 1.1V T J max. 150ºC MAXIMUM RATINGS (TA = 25°C unless otherwise noted) GBPC25 PARAMETER UNIT SYMBOL 06 08 10 12 Maximum repetitive peak reverse voltage V RRM 600 800 1000 1200 V Maximum RMS voltage V RMS 420 560 700 840 V Maximum DC blocking voltage V DC 600 800 1000 1200 V Maximum average forward rectified output current @ Tc = 85°C (Fig.1) I F(AV) 25 A I FSM 310 A Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms) for fusing I 2t 400 A 2s RMS isolation voltage from case to leads V ISO 2500 V T J ,T STG -55 to 150 ºC Peak forward surge current single sine-wave superimposed on rated load Operating junction storage temperature range ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) PARAMETER Maximum instantaneous forward drop per diode TEST CONDITIONS SYMBOL I F = 12.5A VF Maximum reverse DC current at rated DC blocking T A = 25°C voltage per diode T A = 150°C Typical junction capacitance per diode 4V, 1MHz GBPC25 06 08 10 UNIT 12 1.1 V 5 IR µA 500 CJ pF 300 THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted) GBPC25 PARAMETER SYMBOL Typical thermal resistance R θJC (1) UNIT 06 08 10 1.4 12 °C/W Notes (1) With heatsink (2) Bolt down on heatsink with silicone thermal compound between bridge and mounting surface for maximum heat transfer with M5 screw www.nellsemi.com Page 2 of 4 GBPC25 SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.1 Maximum output rectified current Fig.2 Maximum output rectified current 40 Bridges mounted on 4.9” (22.9x8.9x11.7cm) AL. Finned Plate 30 Average forward current (A) Average forward current (A) 35 25 20 15 10 5 0 35 30 20 15 10 5 60 H z Resistive or lnductive Load 0 20 40 60 80 100 120 140 R thS-A = 0.5°C/W 25 0 160 60 H z Resistive or lnductive Load 0 Case temperature(°C) 30 40 50 60 70 80 90 100 Fig.4 Maximum non-repetitive peak forward surge current per diode 80 1000 Peak forward surge current (A) Average power dissipation of bridge (W) 20 Ambient temperature(°C) Fig.3 Maximum power dissipation 70 Capacitive Load 60 50 T J = T J max. 40 Resistive or lnductive Load 30 20 10 0 10 T J = T J max. 0.5 Single Sine-Wave 100 1.0 Cycle 10 0 10 20 30 40 Average output current (A) www.nellsemi.com 1 10 Number of cycles at 60 Hz Page 3 of 4 100 RoHS RoHS GBPC25 SEMICONDUCTOR Nell High Power Products Fig.6 Typical reverse leakage characteristics per leg Fig.5 Maximum instantaneous forward characteristics per leg lnstantaneous reverse leakage (μA) lnstantaneous forward current (A) 100 T J = 25°C 10 1 0.1 0.01 0.4 0.6 0.8 1 1.4 1.2 T J = 125°C 100 10 1 25°C °C TT J = 25 0.1 0.01 1.6 0 Instantaneous forward voltage (V) 40 60 80 100 Instantaneous forward voltage (%) Fig.7 Typical junction characteristics per leg Fig.6 Typical reverse leakage characteristics per leg 1,000 Transient thermal lmpedance (°C/W) 1,000 Junction capacitance (pF) 20 T J = 25°C f = 1.0 MH V sing = 50MVp-p 100 10 1 10 100 Reverse voltage (V) www.nellsemi.com 25°C °C TT J == 25 100 10 1 0.01 0.1 1 10 Heating time, t (sec.) Page 4 of 4 100