THYRISTOR MODULE PCH20012 PCH20016 200A / 1200 to 1600V FEATURES * Isolated Base * Thyristor and Diode Cathode Common Circuit * High Surge Capability * UL Recognized, File No. E187184 OUTLINE DRAWING PCH TYPICAL APPLICATIONS * Rectified For General Use Maximum Ratings Parameter Repetitive Peak Off-State Voltage Non Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage Non Repetitive Peak Reverse Voltage Approx Net Weight:480g Symbol VDRM VDSM VRRM VRSM Parameter IO(AV) RMS On-State Current IT(RMS) I Squared t PCH20016 1200 1300 1200 1300 1600 1700 1600 1700 Conditions Average Rectified Output Current Surge On-State Current Grade PCH20012 ITSM I2t Critical Rate of Turned-On Current di/dt Peak Gate Power Average Gate Power Peak Gate Current Peak Gate Voltage Peak Gate Reverse Voltage Operating JunctionTemperature Range Storage Temperature Range Isoration Voltage Case mounting Mounting torque Terminals Value per 1 Arm PGM PG(AV) IGM VGM VRGM Tjw Tstg Viso Ftor 50Hz Half Sine Wave condition Tc=75°C 50 Hz Half Sine Wave,1Pulse Non-Repetitive 2msec to 10msec VD=2/3VDRM, ITM=2 IO, Tj=125°C IG=300mA, diG/dt=0.2A/µs • Unit V V Max Rated Value Unit 200 A 314 A 4000 A 80000 A2s 100 A/µs 5 W 1 W 2 A 10 V 5 V -40 to +125 °C -40 to +125 °C Base Plate to Terminals, AC1min 2500 V M6 Screw 2.5 to 3.5 N •m M8 Screw 9.0 to 10.0 Electrical • Thermal Characteristics Characteristics VDM= VDRM, Tj= 125°C VRM= VRRM, Tj= 125°C ITM= 600A, Tj=25°C Tj=-40°C VD=6V,IT=1A Tj=25°C Tj=125°C Tj=-40°C VD=6V,IT=1A Tj=25°C Tj=125°C VD=2/3VDRM Tj=125°C Maximum Value. Min. Typ. Max. 80 80 1.28 300 150 80 5 3 2 0.25 dv/dt VD=2/3VDRM Tj=125°C 500 tq ITM=IO,VD=2/3VDRM dv/dt=20V/µs, VR=100V -di/dt=20A/µs, Tj=125°C Symbol Peak Off-State Current Peak Reverse Current Peak Forward Voltage IDM IRM VTM Gate Current to Trigger IGT Gate Voltage to Trigger VGT Gate Non-Trigger Voltage Critical Rate of Rise of Off-State Voltage VGD Turn-Off Time Turn-On Time Delay Time Rise Time Latching Current Holding Current Thermal Resistance Value Per 1Arm tgt td tr IL IH Rth(j-c) Test Conditions VD=2/3VDRM Tj=125°C IG=300mA, diG/dt=0.2A/µs Tj=25°C Tj=25°C Junction to Case Base Plate to Heat Sink Rth(c-f) with Thermal Compound Unit mA mA V mA V V V/µs 100 µs 6 2 4 150 100 µs µs µs mA 0.2 0.1 °C/W PCH2001x OUTLINE DRAWING (Dimensions in mm)