NTE NTE5511

NTE5511 thru NTE5513
Silicon Controlled Rectifier (SCR)
5 Amp
Description:
The NTE5511 thru NTE5513 all–diffused, three junction, silicon controlled rectifiers (SCR’s) are intended for use in power–control and power–switching applications. These devices are available in
a TO66 type package and have a blocking voltage capability of up to 600V and a forward current rating
of 5A (rms value) at a case temperature of +75°C.
Features:
D Designed Especially for High–Volume Systems
D Readily Adaptable for PC Boards and Metal
Heat Sinks
D Low Switching Losses
D High di/dt and dv/dt Capabilities
D Shorted Emitter Gate–Cathode Construction
D Forward and Reverse Gate Dissipation Ratings
D All–Diffused Construction Assures Exceptional
Uniformity and Stability of Characteristics
D Direct–Soldered Internal Construction Assures
Exceptional Resistance to Fatigue
D Symmetrical Gate–Cathode Construction Provides Uniform Current Density, Rapid Electrical
Conduction, and Efficient Heat Dissipation
D All–Welded Construction and Hermetic Sealing
D Low Leakage Currents, Forward and Reverse
D Low Forward Voltage Drop at High Current
Levels
D Low Thermal Resistance
Absolute Maximum Ratings: (For Operation with Sinusoidal AC Supply Voltage at a Frequency
between 50Hz and 400Hz, and with Resistive or Inductive Load)
Transient Peak Reverse Voltage (Non–Repetitive), VRM (non–rep)
NTE5511 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 330V
NTE5512 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 660V
NTE5513 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V
Peak Reverse Voltage (Repetitive), VRM (rep)
NTE5511 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5512 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5513 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Peak Forward Blocking Voltage (Repetitive), VFBOM (rep)
NTE5511 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
NTE5512 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
NTE5513 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V
Average DC Forward Current, IF(av)
(TC = +75°C mounted on heat sink, conduction angle or 180°) . . . . . . . . . . . . . . . . . . . . 3.2A
RMS Forward Current (TC = +75°C mounted on heat sink), IFRMS . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Peak Surge Current (For one cycle of applied voltage), iFM(surge) . . . . . . . . . . . . . . . . . . . . . . . . . 60A
Sub–Cycle Surge (Non–Repetitive, for a period of 1ms to 8.3ms), I2t . . . . . . . . . . . . . . . . . . 15A2sec
Rate of Change of Forward Current (Note 1), di/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200A/µs
Gate Power (Peak, Forward, or Reverse, for 10µs duration, Note 2), PGM . . . . . . . . . . . . . . . . 13W
Average Gate Power (Note 2), PGAV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Operating Case Temperature Range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C
Note 1. VFB = vBOO(min value), IGT = 200mA, 0.5µs rise time
Note 2. Any values of peak gate current or peak gate voltage to give the maximum gate power is
permissible.
Electrical Characteristics: (At Maximum Ratings, TC = +25°C unless otherwise specified)
Parameter
Symbol
Min
Typ
Max
Unit
200
–
–
V
NTE5512
400
–
–
V
NTE5513
600
–
–
V
–
0.10
1.5
mA
Forward Breakover Voltage
NTE5511
vBOO
Peak Blocking Forward Current
NTE5511
Test Conditions
TC = +100°C
IFBOM
VFBO = 200V
TC = +100°C
NTE5512
VFBO = 400V
–
0.20
3.0
mA
NTE5513
VFBO = 600V
–
0.40
4.0
mA
–
0.05
0.75
mA
Peak Blocking Reverse Current
NTE5511
IRBOM
VRBO = 200V
TC = +100°C
NTE5512
VRBO = 400V
–
0.10
1.5
mA
NTE5513
VRBO = 600V
–
0.20
2.0
mA
IF = 30A
–
2.15
2.80
V
Forward Voltage Drop
vF
DC Gate–Trigger Current
IGT
–
8
15
mA
DC Gate–Trigger Voltage
VGT
–
1.2
2.0
V
Holding Current
IHold
–
10
20
mA
Critical Rate of Applied Forward Voltage
dv/dt
10
200
–
V/µs
0.75
1.5
–
µs
–
15
50
µs
–
–
4
°C/W
VFB = vBOO (min), exponential rise,
TC = +100°C
Turn–On Time
(Delay Time + Rise Time)
ton
VFB = vBOO (min), iF = 4.5A,
IGT = 200mA, 0.1µs rise time
Turn–Off Time
(Reverse Recovery Time + Gate
Recovery Time)
toff
iF = 2A, 50µs pulse width,
dvFB/dt = 20V/µs, dir/dt = 30A/µs,
IGT = 200mA, TC = +75°C
Thermal Resistance, Junction–to–Case
RΘJC
.485 (12.3)
Dia
.295 (7.5)
.062 (1.57)
.031 (0.78) Dia
.960 (24.3)
.360 (9.14)
Min
Gate
.580 (14.7)
.147 (3.75) Dia
(2 Places)
.200
(5.08)
.145 (3.7) R Max
Anode/Case
Cathode