NTE NTE56051

NTE56051 & NTE56052
TRIAC, 8A Low Logic Level
Description:
The NTE56051 and NTE56052 are glass passivated, Low Logic Level TRIACs in a TO220 type package designed for use in general purpose bidirectional switching and phase control applications.
These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits, and
other low power gate trigger circuits.
Absolute Maximum Ratings:
Repetitive Peak Off–Sate Voltage (Note 1), VDRM
NTE56051 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
NTE56052 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
RMS On–State Current (Full Sine Wave, TMB ≤ 102°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Non–Repetitive Peak On–State Current, ITSM
(Full Sine Wave, TJ = +125°C prior to Surge, with Reapplied VDRMmax)
t = 20ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55A
t = 16.7ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60A
I2t for Fusing (t = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A2sec
Repetitive Rate–of–Rise of On–State Current after Triggering, dIT/dt
(ITM = 12A, IG = 0.2A, dIG/dt = 0.2A/µs)
MT2 (+), G (+) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/µs
MT2 (+), G (–) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/µs
MT2 (–), G (–) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/µs
MT2 (–), G (+) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A/µs
Peak Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak Gate Voltage, VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Peak Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
Average Gate Power (Over Any 20ms Period), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Thermal Resistance, Junction–to–Mounting Base, RthJMB
Full Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0K/W
Half Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4K/W
Typical Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60K/W
Note 1. Although not recommended, off–state voltages up to 800V may be applied without damage,
but the TRIAC may switch to the on–State. The rate–of–rise of current should not exceed
6A/µs.
Electrical Characteristics: (TJ = +25°C unless otherwise specfied)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
–
2.5
5
mA
MT2 (+), G (–)
–
3.5
5
mA
MT2 (–), G (–)
–
3.5
5
mA
MT2 (–), G (+)
–
6.5
10
mA
–
1.6
15
mA
MT2 (+), G (–)
–
8.5
20
mA
MT2 (–), G (–)
–
1.2
15
mA
MT2 (–), G (+)
–
2.5
20
mA
Static Characteristics
Gate Trigger Current
MT2 (+), G (+)
IGT
Latching Current
MT2 (+), G (+)
IL
VD = 12V, IT = 0.1A
VD = 12V, IT = 0.1A
Holding Current
IH
VD = 12V, IT = 0.1A
–
1.5
10
mA
On–State Voltage
VT
IT = 5A
–
1.4
1.7
V
VD = 12V, IT = 0.1A
–
0.7
1.5
V
0.25
0.4
–
V
VD = VDRMmax, TJ = +125°C
–
0.1
0.5
mA
dVD/dt
VDM = 67% VDRMmax, TJ = +125°C,
Exponential Waveform, RGK = 1kΩ
–
5
–
V/µs
tgt
ITM = 12A, VD = VDRMmax, IG = 0.1A,
dIG/dt = 5A/µs
–
2
–
µs
Gate Trigger Voltage
VGT
VD = 400V, IT = 0.1A, TJ = +125°C
Off–State Leakage Current
ID
Dynamic Characteristics
Critical Rate–of–Rise of
Off–State Voltage
Gate Controlled Turn–On Time
.420 (10.67)
Max
.110 (2.79)
MT2
.147 (3.75)
Dia Max
.500
(12.7)
Max
.250 (6.35)
Max
.070 (1.78) Max
.500
(12.7)
Min
MT1
Gate
.100 (2.54)
MT2