OKI MSM64162D-XXGS-BK-F

E2E0034-38-95
¡ Semiconductor
MSM64162D
¡ Semiconductor
This version:MSM64162D
Sep. 1998
Previous version: Mar. 1996
4-Bit Microcontroller with Built-in RC Oscillation Type A/D Converter and LCD Driver
GENERAL DESCRIPTION
The MSM64162D is a low power 4-bit microcontroller that employs Oki's original CPU core nX4/20.
The MSM64162D has 1-channel RC oscillation type A/D converter, LCD driver for up to 80
segments, and buzzer output port. It is best suited for applications such as low power
thermometers and clinical thermometers.
FEATURES
• Operating range
Operating frequencies
Operating voltage
Operating temperature
• Memory space
Internal program memory
Internal data memory
• Minimum instruction execution time
• RC oscillation type A/D converter
• LCD driver
(1) At 1/4 duty and 1/3 bias
(2) At 1/3 duty and 1/3 bias
(3) At 1/2 duty and 1/2 bias
• Buzzer driver
• Capture circuit
• Watchdog timer
• Clock
CPU clock
Time base clock
• Power supply voltage
• I/O port
Input-output port
Input port
Output port
• Interrupt sources
External interrupt
Internal interrupt
• Battery check circuit
:
:
:
32.768 kHz
1.25 to 1.7 V (1.5 V spec.)
2.0 to 3.5 V (3 V spec.)
2.2 to 3.5 V (3 V spec., 1/2 duty)
–40 to +85°C
:
:
:
:
:
:
:
:
:
:
2016 bytes
128 nibbles
91.6 ms @ 32.768 kHz
1 channel (2 sensors can be connected)
24 outputs; duty ratio switchable by software
80 segments (max)
63 segments (max)
44 segments (max)
1 output (4 output modes selectable)
2 channels
:
:
:
:
32.768 kHz crystal oscillator
32.768 kHz
32.768 kHz
1.5 V/3 V (selectable by mask option)
:
:
:
2 ports ¥ 4 bits
1 port ¥ 4 bits
1 port ¥ 4 bits
(8 out of the 24 LCD driver outputs can be used
as output-only ports by mask option.)
:
:
:
2 sources
7 sources
1 (incorporated into the input-only port)
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¡ Semiconductor
MSM64162D
• Package options:
64-pin plastic QFP (QFP64-P-1420-1.00-BK) : (Product name : MSM64162D-¥¥GS-BK)
80-pin plastic QFP (QFP80-P-1420-0.80-BK) : (Product name : MSM64162D-¥¥GS-BK-F)
Chip
: (Product name : MSM64162D-¥¥)
¥¥ indicates a code number.
2/37
¡ Semiconductor
MSM64162D
BLOCK DIAGRAM
CPU CORE: nX-4/20
BSR
TR2
TR1
TR0
(4)
HALT
A11 to A8
ALU
C
ROM
2016B
PCH
PCM PCL
A7 to A0
B
MIEF
(4)
A
(4)
H
L
X
Y
DB7 to DB0
XT
XT
CLKG
ROMR
(8)
IR
SP
IR
DECODER
TIMING
CONTROLLER
RAM
128N
(8)
TBC
INTC
INT
RESET
PORT3
RSTG
WDT
TST1
TST2
VSSL
INT
TST
5
PORT2
P2.3
P2.2
P2.1
P2.0
PORT1
P1.3
P1.2
P1.1
P1.0
INT
INT
BC
VR
L0
L1
LCD
CAPR
L23
VSS1
VSS2
VSS3
C1
C2
P3.3
P3.2
P3.1
P3.0
INT
BIAS
PORT0
PORT ADDRESS
P0.3
P0.2
P0.1
P0.0
DB7 to DB0
INT
VDD
IN0
CS0
RS0
CRT0
ADC
RT0
BD
BD
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¡ Semiconductor
MSM64162D
52 P3.2
53 P3.3
54 BD
55 P1.0
56 P1.1
57 P1.2
60 VSS2
59 VSS1
58 P1.3
62 VSS3
61 VSSL
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
32
31
30
29
28
27
26
25
24
23
22
P3.1
P3.0
P2.3
P2.2
P2.1
P2.0
(NC)
(NC)
(NC)
(NC)
IN0
CS0
RS0
CRT0
RT0
P0.3
P0.2
P0.1
P0.0
L19/P5.3
L20/P6.0
L21/P6.1
L22/P6.2
L23/P6.3
(NC)
(NC)
VDD
XT
XT
RESET
TST1
TST2
21
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
20
L0
L1
L2
L3
L4
L5
L6
L7
L8
L9
L10
L11
L12
L13
L14
L15
L16/P5.0
L17/P5.1
L18/P5.2
63 C1
64 C2
PIN CONFIGURATION (TOP VIEW)
64-Pin Plastic QFP
Note: Pins marked as (NC) are no-connection pins which are left open.
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¡ Semiconductor
MSM64162D
65 L20/P6.0
66 L21/P6.1
67 (NC)
68 L22/P6.2
69 L23/P6.3
70 (NC)
71 (NC)
72 (NC)
73 (NC)
74 VDD
75 (NC)
76 XT
78 (NC)
77 XT
2
64 L19/P5.3
63 L18/P5.2
3
62 L17/P5.1
4
61 L16/P5.0
5
60 L15
6
59 (NC)
7
8
58 L14
57 L13
1
9
56 L12
10
55 L11
11
12
54 L10
53 (NC)
13
52 L9
14
51 L8
15
16
50 L7
49 L6
17
48 L5
18
47 L4
19
46 L3
20
45 L2
44 L1
21
23
43 L0
42 C2
24
41 C1
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
P3.2 25
22
P3.3
BD
(NC)
P1.0
(NC)
P1.1
(VDD)
(NC)
P1.2
P1.3
VSS1
VSS2
(NC)
VSSL
VSS3
TST2
P0.0
P0.1
P0.2
P0.3
RT0
(NC)
CRT0
RS0
CS0
IN0
(NC)
(NC)
(NC)
(NC)
(NC)
P2.0
P2.1
P2.2
P2.3
P3.0
(NC)
P3.1
(NC)
79 RESET
80 TST1
PIN CONFIGURATION (TOP VIEW) (continued)
80-Pin Plastic QFP
Notes: 1. Pins marked as (NC) are no-connection pins which are left open.
2. VDD should be supplied from pin 74. Pin 32 is internally connected to VDD.
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¡ Semiconductor
MSM64162D
PAD CONFIGURATION
44 43 42 41 40
(NC)
(NC)
(NC)
(NC)
Pad Layout
39 38 37 36 35 34 33 32 31
45
46
47
30
29
28
48
27
49
26
50
25
51
(NC)
52
(NC)
53
54
24
23
22
55
56
57
58
21
20
19
1 2 3 4 5 6 7 8 9 10 1112 13 14 15 16 17 18
Chip Size
Chip Thickness
Coordinate Origin
Pad Hole Size
Pad Size
Minimum Pad Pitch
:
:
:
:
:
:
y
x
4.69 mm ¥ 4.41 mm
350 mm (typ.)
Chip center
110 mm ¥ 110 mm
130 mm ¥ 130 mm
180 mm
Note: The chip substrate voltage is VDD.
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¡ Semiconductor
MSM64162D
Pad Coordinates
Pad No.
Pad Name
X (µm)
Y (µm)
Pad No.
Pad Name
X (µm)
Y (µm)
1
L0
–2168
–2042
30
TST2
2168
1766
2
L1
–1918
–2042
31
P0.0
2168
2042
3
L2
–1669
–2042
32
P0.1
1899
2042
4
L3
–1426
–2042
33
P0.2
1628
2042
5
L4
–1170
–2042
34
P0.3
1364
2042
6
L5
–934
–2042
35
RT0
1100
2042
7
L6
–727
–2042
36
CRT0
829
2042
8
L7
–519
–2042
37
RS0
565
2042
9
L8
–312
–2042
38
CS0
349
2042
10
L9
–104
–2042
39
IN0
141
2042
11
L10
104
–2042
40
P2.0
–911
2042
12
L11
311
–2042
41
P2.1
–1160
2042
13
L12
527
–2042
42
P2.2
–1416
2042
14
L13
791
–2042
43
P2.3
–1666
2042
15
L14
1062
–2042
44
P3.0
–1916
2042
16
L15
1340
–2042
45
P3.1
–2168
1829
17
L16/P5.0
1618
–2042
46
P3.2
–2168
1563
18
L17/P5.1
1897
–2042
47
P3.3
–2168
1382
19
L18/P5.2
2168
–2042
48
BD
–2168
1017
20
L19/P5.3
2168
–1714
49
P1.0
–2168
688
21
L20/P6.0
2168
–1424
50
P1.1
–2168
328
22
L21/P6.1
2168
–1134
51
P1.2
–2168
6
23
L22/P6.2
2168
–844
52
P1.3
–2168
–353
24
L23/P6.3
2168
–554
53
VSS1
–2168
–645
25
VDD
2168
316
54
VSS2
–2168
–826
26
XT
2168
606
55
VSSL
–2168
–1254
27
XT
2168
896
56
VSS3
–2168
–1435
28
RESET
2168
1186
57
C1
–2168
–1616
29
TST1
2168
1476
58
C2
–2168
–1796
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¡ Semiconductor
MSM64162D
PIN DESCRIPTIONS
Basic Functions
Function
Power
Supply
Oscillation
Ports
Symbol
Type
VDD
—
0 V power supply
Description
VSS1
—
Bias output for driving LCD (–1.5 V), or negative power supply at 1.5 V spec.
VSS2
—
Bias output for driving LCD (–3.0 V), or negative power supply at 3.0 V spec.
VSS3
—
Bias output for driving LCD (–4.5 V).
VSSL
—
C1, C2
—
Negative power supply pin for internal logic (internally generated constant
voltage)
Pins for connecting a capacitor for generating VSS1, VSS2, and VSS3.
XT
I
XT
O
P1.0 to P1.3
O
Output port (P1.0 : high current output)
P0.0 to P0.3
I
Input port
P2.0 to P3.3
I/O
Input-output ports
BD
O
Output pin for the buzzer driver
L0 to L15
O
LCD driver pins
O
LCD driver pins, or output ports by mask option
RT0
O
Resistance temperature sensor connection pin
CRT0
O
RS0
O
CS0
O
Reference capacitor connection pin
IN0
I
Input pin for RC oscillator circuit
RESET
I
Reset pin
TST1
I
TST2
I
L16/P5.0 to
L23/P6.3
32.768 kHz crystal connection pins
Resistance/capacitance temperature sensor
A/D
Converter
Reset
Test
connection pin
Reference resistor connection pin
Input pins for testing
8/37
¡ Semiconductor
MSM64162D
Secondary Functions
Function
Symbol
Type
RC Oscillation Monitor
P3.3
O
Monitor output pin (MON) for an RC oscillation clock.
Battery Check
P0.3
I
Analog comparator input pin for battery check.
P3.0
I
Level-triggered external 0 interrupt input pins.
P3.1
I
The change of input signal level causes an interrupt to occur.
P3.2
I
P3.3
I
P2.0
I
External
P2.1
I
Interrupt
P2.2
I
P2.3
I
P0.0
I
Level-triggered external 1 interrupt input pins.
P0.1
I
The change of input signal level causes an interrupt to occur.
P0.2
I
P0.3
I
P0.0
I
P0.1
I
Capture
Description
Capture circuit trigger input pins.
9/37
¡ Semiconductor
MSM64162D
MEMORY MAPS
Program Memory
Test program area
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
07E0H,,,,,,,,,,,,,
,,,,,,,,,,,,,
07FFH
32 bytes
Contents of interrupt area
2016 bytes
03EH
Interrupt area
30
bytes
03BH
Watchdog interrupt
038H
External interrupt (0)
032H
External interrupt (1)
02FH
ADC interrupt
02CH
256 Hz interrupt
029H
32 Hz interrupt
026H
16 Hz interrupt
023H
1 Hz interrupt
020H
4 Hz interrupt
020H
CZP area
010H
Start address
000H
8 bits
Program Memory Map
Address 000H is the instruction execution start address by the system reset.
The CZP area from address 010H to address 01FH is the start address for the CZP subroutine of
1-byte call instruction.
The start address of interrupt subroutine is assigned to the interrupt address from address 020H
to 03DH.
The user area has 2016 bytes of address 000H to address 07DFH. No program can be stored in
the test program area.
10/37
¡ Semiconductor
MSM64162D
Data Memory
The data memory area consists of 8 banks and each bank has 256 nibbles (256 ¥ 4 bits).
The data RAM is assigned to BANK 7 and peripheral ports are assigned to BANK 0.
7FFH
780H
77FH
700H
BANK 7
Data RAM area
Data/Stack area (128 nibbles)
Unused area
Contents of 000H to 07FH
07FH
Inaccessible area
SFR area
100H
0FFH
080H
07FH
Unused area
BANK 0
000H
000H
4 bits
Data Memory Map
The data RAM area (128 nibbles) is shared by the stack area. The stack is a memory starting from
address 7FFH toward the low-order addresses where 4 nibbles are used by Subroutine Call
Instruction and 8 nibbles are used by an interrupt.
The addresses 080H to 0FFH of BANK 0 and the addresses 700H to 77FH of BANK 7 are not
assigned as the data memory, so access to these addresses has no effect. Moreover, it is
impossible to access BANK 1 to BANK 6.
11/37
¡ Semiconductor
MSM64162D
ABSOLUTE MAXIMUM RATINGS (1.5 V Spec.)
(VDD = 0 V)
Parameter
Symbol
Condition
Rating
Unit
Power Supply Voltage 1
VSS1
Ta = 25°C
–2.0 to +0.3
V
Power Supply Voltage 2
VSS2
Ta = 25°C
–4.0 to +0.3
V
Power Supply Voltage 3
VSS3
Ta = 25°C
–5.5 to +0.3
V
Power Supply Voltage 4
VSSL
Ta = 25°C
–2.0 to +0.3
V
Input Voltage 1
VIN1
VSS1 Input, Ta = 25°C
VSS1 – 0.3 to +0.3
V
VIN2
VSSL Input, Ta = 25°C
VSSL – 0.3 to +0.3
V
Output Voltage 1
Input Voltage 2
VOUT1
VSS1 Output, Ta = 25°C
VSS1 – 0.3 to +0.3
V
Output Voltage 2
VOUT2
VSS2 Output, Ta = 25°C
VSS2 – 0.3 to +0.3
V
Output Voltage 3
VOUT3
VSS3 Output, Ta = 25°C
VSS3 – 0.3 to +0.3
V
Output Voltage 4
VOUT4
VSSL Output, Ta = 25°C
VSSL – 0.3 to +0.3
V
Storage Temperature
TSTG
—
–55 to +150
°C
RECOMMENDED OPERATING CONDITIONS (1.5 V Spec.)
(VDD = 0 V)
Parameter
Symbol
Condition
Range
Unit
Operating Temperature
Top
—
–40 to +85
°C
Operating Voltage
VSS1
—
–1.7 to –1.25
V
fXT
—
30 to 35
kHz
Crystal Oscillation Frequency
12/37
¡ Semiconductor
MSM64162D
ELECTRICAL CHARACTERISTICS (1.5 V Spec.)
DC Characteristics
(VDD = 0 V, VSS1 = –1.5 V, Ta = –40 to +85°C unless otherwise specified)
Parameter
Condition
Symbol
VSS2 Voltage
VSS2
Ca, Cb, C12 = 0.1 mF
VSS3 Voltage
VSS3
Ca, Cb, C12 = 0.1 mF
VSSL Voltage
VSSL
Crystal Oscillation
Start Voltage
Crystal Oscillation
Hold Voltage
Crystal Oscillation
Stop Detection Time
Internal Crystal
Oscillator Capacitance
External Crystal
Oscillator Capacitance
Internal Crystal
Oscillator Capacitance
POR Generation
Voltage
POR Non-generation
Voltage
Battery Check
Reference Voltage
VRB Temperature
Variation
VSTA
+100%
–50%
+100%
–50%
—
Oscillation start time:
within 5 seconds
Min.
Typ.
Max.
Unit
–3.2
–3.0
–2.8
V
–4.7
–4.5
–4.3
V
–1.5
–1.3
–0.6
V
—
—
–1.45
V
VHOLD
—
—
—
–1.25
V
TSTOP
—
0.1
—
1000
ms
CG
—
10
15
20
pF
10
—
30
pF
10
15
20
pF
–0.4
—
0
V
–1.5
—
–1.2
V
–0.73
–0.63
–0.53
V
CGEX
When external CG used
—
CD
VPOR1
VPOR2
VRB
When VSS1 is between VPOR1
and –1.5 V
No POR when VSS1 is between
VPOR2 and –1.5 V
Ta = 25°C
Measuring
Circuit
1
2
DVRB
—
—
–2.0
—
mV/°C
Notes: 1. "POR" denotes Power On Reset.
2. "TSTOP" indicates that if the crystal oscillator stops over the value of TSTOP, the
system reset occurs.
13/37
¡ Semiconductor
MSM64162D
DC Characteristics (continued)
(VDD = 0 V, VSS1 = –1.5 V, Ta = –40 to +85°C unless otherwise specified)
Parameter
Supply Current 1
Supply Current 2
Condition
Symbol
IDD1
IDD2
CPU in halt state
Min.
Typ.
Max.
Ta = –40 to +40°C
—
2.0
5.0
mA
Ta = +40 to +85°C
—
2.0
30
mA
CPU in operating Ta = –40 to +40°C
—
5.0
15
mA
state
Ta = +40 to +85°C
—
5.0
40
mA
RT0 = 10 kW
—
150
230
mA
RT0 = 2 kW
—
600
900
mA
—
25
125
mA
CPU in halt state,
Supply Current 3
IDD3
RC oscillator for
A/D converter is in
operating state
Supply Current 4
IDD4
Unit
Battery check circuit in operating
state, CPU in operating state
Measuring
Circuit
1
14/37
¡ Semiconductor
MSM64162D
DC Characteristics (continued)
(VDD = 0 V, VSS1 = VSSL = –1.5 V, VSS2 = –3.0 V, VSS3 = –4.5 V,
Ta = –40 to +85°C unless otherwise specified)
Parameter
(Pin Name)
Symbol
Condition
Min.
Typ.
Max.
Unit
Output Current 1
(P1.0)
IOH1
VOH1 = –0.5 V
–2.1
–0.7
–0.2
mA
IOL1
VOL1 = VSS1 + 0.5 V
1.0
3.0
9.0
mA
Output Current 2
(P1.1 to P1.3)
(P2.0 to P2.3)
(P3.0 to P3.3)
IOH2
VOH2 = –0.5 V
–2.1
–0.7
–0.2
mA
IOL2
VOL2 = VSS1 + 0.5 V
0.2
0.7
2.1
mA
Output Current 3
(BD)
IOH3
VOH3 = –0.7 V
–1.8
–0.6
–0.2
mA
IOL3
VOL3 = VSS1 + 0.7 V
0.2
0.6
1.8
mA
Output Current 4
(RT0, RS0, CRT0,
CS0)
IOH4
VOH4 = –0.1 V
–1.1
–0.6
–0.3
mA
IOL4
VOL4 = VSS1 + 0.1 V
0.3
0.6
1.1
mA
Output Current 5
(When L16 to L23 are
configured as output
ports)
IOH5
VOH5 = –0.5 V
–1.5
–0.5
–0.1
mA
IOL5
VOL5 = VSS1 + 0.5 V
0.1
0.5
1.5
mA
IOH6
VOH6 = –0.2 V
(VDD level)
—
—
–4.0
mA
IOMH6
VOMH6 = VSS1 + 0.2 V (VSS1 level)
4.0
—
—
mA
IOMH6S
VOMH6S = VSS1 – 0.2 V (VSS1 level)
—
—
–4.0
mA
IOML6
VOML6 = VSS2 + 0.2 V (VSS2 level)
4.0
—
—
mA
IOML6S
VOML6S = VSS2 – 0.2 V (VSS2 level)
—
—
–4.0
mA
(VSS3 level)
4.0
—
—
mA
Output Current 6
(L0 to L23)
Output Leakage Current
(P1.0 to P1.3)
(P2.0 to P2.3)
(P3.0 to P3.3)
(RT0, RS0, CRT0,
CS0)
IOL6
VOL6 = VSS3 + 0.2 V
IOOH
VOH = VDD
—
—
0.3
mA
IOOL
VOL = VSS1
–0.3
—
—
mA
Measuring
Circuit
2
15/37
¡ Semiconductor
MSM64162D
DC Characteristics (continued)
(VDD = 0 V, VSS1 = VSSL = –1.5 V, VSS2 = –3.0 V, VSS3 = –4.5 V,
Ta = –40 to +85°C unless otherwise specified)
Parameter
(Pin Name)
Symbol
Condition
Min.
Typ.
Max.
Unit
IIH1
VIH1 = VDD (when pulled down)
5
18
60
mA
IIL1
VIL1 = VSS1 (when pulled up)
–60
–18
–5.0
mA
IIH1Z
VIH1 = VDD (in a high impedance state)
0
—
1.0
mA
IIL1Z
VIL1 = VSS1 (in a high impedance state) –1.0
—
0
mA
IIH2
VIH2 = VDD (when pulled down)
5
18
60
mA
IIH2Z
VIH2 = VDD (in a high impedance state)
0
—
1.0
mA
IIL2Z
VIL2 = VSS1 (in a high impedance state)
–1.0
—
0
mA
Input Current 3
(RESET, TST1, TST2)
IIH3
VIH3 = VDD
0
—
1.0
mA
IIL3
VIL3 = VSS1
–1.5
–0.75
–0.3
mA
Input Voltage 1
(P0.0 to P0.3)
(P2.0 to P2.3)
(P3.0 to P3.3)
VIH1
—
–0.3
—
0
V
VIL1
—
–1.5
—
–1.2
V
Input Voltage 2
(IN0)
VIH2
—
–0.3
—
0
V
VIL2
—
–1.5
—
–1.2
V
Input Voltage 3
(RESET, TST1, TST2)
VIH3
—
–0.3
—
0
V
VIL3
—
–1.5
—
–1.2
V
Input Current 1
(P0.0 to P0.3)
(P2.0 to P2.3)
(P3.0 to P3.3)
(P4.0 to P4.3)
Input Current 2
(IN0)
Measuring
Circuit
3
4
16/37
¡ Semiconductor
MSM64162D
DC Characteristics (continued)
(VDD = 0 V, VSS1 = VSSL = –1.5 V, VSS2 = –3.0 V, VSS3 = –4.5 V,
Ta = –40 to +85°C unless otherwise specified)
Parameter
(Pin Name)
Symbol
Condition
Min.
Typ.
Max.
Unit
0.05
0.1
0.3
V
Hysteresis Width
(P0.0 to P0.3)
(P2.0 to P2.3)
(P3.0 to P3.3)
DVT1
Hysteresis Width
(RESET, TST1, TST2)
DVT2
—
0.05
0.1
0.3
V
Input Pin Capacitance
(P0.0 to P0.3)
(P2.0 to P2.3)
(P3.0 to P3.3)
CIN
—
—
—
5.0
pF
—
Measuring
Circuit
4
1
17/37
¡ Semiconductor
MSM64162D
Measuring circuit 1
CS0
RT0
RI0
RT0
CS0
IN0
XT
Crystal
32.768 kHz
XT
C1
C12
C2
VSSL
VDD
VSS1
VSS2
A
Cl
VSS3
Ca
V
Cb
V
V
Ca, Cb, C12, Cl
RT0
CS0
RI0
: 0.1 mF
: 10 kW/2 kW
: 820 pF
: 10 kW
Measuring circuit 2
(*1)
INPUT
VIH
OUTPUT
(*2)
A
VIL
VDD
VSS1
VSS2
VSS3
VSSL
18/37
¡ Semiconductor
MSM64162D
Measuring circuit 3
INPUT
A
OUTPUT
(*3)
VDD
VSS1
VSS2
VSS3
VSSL
(*3)
INPUT
VIH
OUTPUT
Measuring circuit 4
Waveform
Monitoring
VIL
VDD
VSS1
VSS2
VSS3
VSSL
*1 Input logic circuit to determine the specified measuring conditions.
*2 Measured at the specified output pins.
*3 Measured at the specified input pins.
19/37
¡ Semiconductor
MSM64162D
A/D Converter Characteristics
(VDD = 0 V, VSS1 = –1.5 V, Ta = –40 to +85°C unless otherwise specified)
Parameter
Symbol
Resistor
for Oscillation
RS0, RT0,
RT0-1
Input Current
Limiting Resistor
RI0
Condition
CS0, CT0 ≥ 740 pF
—
Min.
Typ.
Max.
Unit
2.0
—
—
kW
1.0
10
—
kW
Measuring
Circuit
5
Oscillation
Frequency
RS•RT Oscillation
Frequency Ratio (*)
*
fOSC1
Resistor for oscillation = 2 kW
165
221
256
kHz
fOSC2
Resistor for oscillation = 10 kW
41.8
52.2
60.6
kHz
fOSC3
Resistor for oscillation = 200 kW
2.55
3.04
3.53
kHz
Kf1
RT0, RT0-1 = 2 kW
3.89
4.18
4.35
—
Kf2
RT0, RT0-1 = 10 kW
0.990
1.0
1.010
—
Kf3
RT0, RT0-1 = 200 kW
0.0561 0.0584 0.0637
—
Kfx is the ratio of the oscillation frequency by a sensor resistor to the oscillation frequency
by a reference resistor in the same condition.
Kfx =
fOSCX (RT0–CS0 Oscillation)
fOSCX (RT0-1–CS0 Oscillation)
fOSCX (RS0–CS0 Oscillation) ,
(x = 1, 2, 3)
fOSCX (RS0–CS0 Oscillation)
20/37
¡ Semiconductor
MSM64162D
RT0
RT0-1
CT0
RS0
CS0
RI0
Measuring circuit 5
Oscillation Mode Designation
IN0 CS0 RS0 CRT0 RT0
RESET
TST1
TST2
P0.0
P3.3
Frequency
Measurement (fOSCX)
D. U. T.
P0.1
P0.2
P0.3
VDD
VSSL
VSS2
Cl
RT0, RT0-1 = 2 kW/10 kW/200 kW
RS0 = 10 kW
RI0 = 10 kW
CS0, CT0 = 820 pF
Cl = 0.1 mF
21/37
¡ Semiconductor
MSM64162D
ABSOLUTE MAXIMUM RATINGS (3.0 V Spec.)
(VDD = 0 V)
Parameter
Symbol
Condition
Rating
Unit
Power Supply Voltage 1
VSS1
Ta = 25°C
–2.0 to +0.3
V
Power Supply Voltage 2
VSS2
Ta = 25°C
–4.0 to +0.3
V
Power Supply Voltage 3
VSS3
Ta = 25°C
–5.5 to +0.3
V
Power Supply Voltage 4
VSSL
Ta = 25°C
–4.0 to +0.3
V
Input Voltage 1
VIN1
VSS2 Input, Ta = 25°C
VSS2 – 0.3 to +0.3
V
VIN2
VSSL Input, Ta = 25°C
VSSL – 0.3 to +0.3
V
Output Voltage 1
VOUT1
VSS2 Output, Ta = 25°C
VSS2 – 0.3 to +0.3
V
Output Voltage 2
VOUT2
VSS3 Output, Ta = 25°C
VSS3 – 0.3 to +0.3
V
Output Voltage 3
VOUT3
VSSL Output, Ta = 25°C
VSSL – 0.3 to +0.3
V
Storage Temperature
TSTG
—
–55 to +150
°C
Input Voltage 2
RECOMMENDED OPERATING CONDITIONS (3.0 V Spec.)
(VDD = 0 V)
Parameter
Operating Temperature
Symbol
Condition
Range
Unit
—
–40 to +85
°C
Top
Using LCD driver with
Operating Voltage
VSS2
"duty 1/2"
Except using LCD driver
with "duty 1/2"
Crystal Oscillation Frequency
fXT
—
–3.5 to –2.2
V
–3.5 to –2.0
30 to 66
kHz
22/37
¡ Semiconductor
MSM64162D
ELECTRICAL CHARACTERISTICS (3.0 V Spec.)
DC Characteristics
Parameter
(VDD = 0 V, VSS2 = –3.0 V, Ta = –40 to +85°C unless otherwise specified)
Condition
Symbol
VSS1 Voltage
VSS1
Ca, Cb, C12 = 0.1 mF
VSS3 Voltage
VSS3
Ca, Cb, C12 = 0.1 mF
VSSL Voltage
VSSL
Crystal Oscillation
Start Voltage
Crystal Oscillation
Hold Voltage
Crystal Oscillation
Stop Detection Time
Internal Crystal
Oscillator Capacitance
External Crystal
Oscillator Capacitance
Internal Crystal
Oscillator Capacitance
POR Generation
Voltage
POR Non-generation
Voltage
Battery Check
Reference Voltage
VRB Temperature
Variation
VSTA
+100%
–50%
+100%
–50%
—
Oscillation start time:
within 5 seconds
Min.
Typ.
Max.
Unit
–1.7
–1.5
–1.3
V
–4.7
–4.5
–4.3
V
–1.9
–1.3
–0.6
V
—
—
–2.0
V
VHOLD
—
—
—
–2.0
V
TSTOP
—
0.1
—
1000
ms
CG
—
10
15
20
pF
10
—
30
pF
10
15
20
pF
–0.7
—
0
V
–3.0
—
–2.0
V
–0.73
–0.63
–0.53
V
—
–2.0
—
mV/°C
CGEX
When external CG used
—
CD
VPOR1
VPOR2
VRB
When VSS2 is between VPOR1
and –3.0 V
No POR when VSS2 is between
VPOR2 and –3.0 V
Ta = 25°C
Measuring
Circuit
1
2
DVRB
—
Notes: 1. "POR" denotes Power On Reset.
2. "TSTOP" indicates that if the crystal oscillator stops over the value of TSTOP, the
system reset occurs.
23/37
¡ Semiconductor
MSM64162D
DC Characteristics (continued)
(VDD = 0 V, VSS2 = –3.0 V, Ta = –40 to +85°C unless otherwise specified)
Parameter
Supply Current 1
Supply Current 2
Condition
Symbol
IDD1
IDD2
CPU in halt state
IDD3
IDD4
Max.
Unit
Ta = –40 to +40°C
—
1.5
4.5
mA
Ta = +40 to +85°C
—
1.5
30
mA
—
5.0
15
mA
state
Ta = +40 to +85°C
—
5.0
40
mA
RT0 = 10 kW
—
300
450
mA
RT0 = 2 kW
—
1300
2000
mA
—
55
150
mA
RC oscillator for
A/D converter is in
operating state
Supply Current 4
Typ.
CPU in operating Ta = –40 to +40°C
CPU in halt state,
Supply Current 3
Min.
Battery check circuit in operating
state, CPU in operating state
Measuring
Circuit
1
24/37
¡ Semiconductor
MSM64162D
DC Characteristics (continued)
(VDD = 0 V, VSS1 = VSSL = –1.5 V, VSS2 = –3.0 V, VSS3 = –4.5 V,
Ta = –40 to +85°C unless otherwise specified)
Parameter
(Pin Name)
Symbol
Condition
Min.
Typ.
Max.
Unit
Output Current 1
(P1.0)
IOH1
VOH1 = –0.5 V
–6.0
–2.0
–0.7
mA
IOL1
VOL1 = VSS2 + 0.5 V
3.0
8.0
25
mA
Output Current 2
(P1.1 to P1.3)
(P2.0 to P2.3)
(P3.0 to P3.3)
IOH2
VOH2 = –0.5 V
–6.0
–2.0
–0.7
mA
IOL2
VOL2 = VSS2 + 0.5 V
0.7
2.0
6.0
mA
Output Current 3
(BD)
IOH3
VOH3 = –0.7 V
–6.0
–2.0
–0.7
mA
IOL3
VOL3 = VSS2 + 0.7 V
0.7
2.0
6.0
mA
Output Current 4
(RT0, RS0, CRT0,
CS0)
IOH4
VOH4 = –0.1 V
–2.5
–1.3
–0.7
mA
IOL4
VOL4 = VSS2 + 0.1 V
0.7
1.3
2.5
mA
IOH5
VOH5 = –0.5 V
–1.5
–0.6
–0.15
mA
IOL5
VOL5 = VSS2 + 0.5 V
0.15
0.6
1.5
mA
IOH6
VOH6 = –0.2 V
(VDD level)
—
—
–4.0
mA
IOMH6
VOMH6 = VSS1 + 0.2 V (VSS1 level)
4.0
—
—
mA
IOMH6S
VOMH6S = VSS1 – 0.2 V (VSS1 level)
—
—
–4.0
mA
IOML6
VOML6 = VSS2 + 0.2 V (VSS2 level)
4.0
—
—
mA
IOML6S
VOML6S = VSS2 – 0.2 V (VSS2 level)
—
—
–4.0
mA
(VSS3 level)
4.0
—
—
mA
Output Current 5
(When L16 to L23 are
configured as output
ports)
Output Current 6
(L0 to L23)
Output Leakage Current
(P1.0 to P1.3)
(P2.0 to P2.3)
(P3.0 to P3.3)
(RT0, RS0, CRT0,
CS0)
IOL6
VOL6 = VSS3 + 0.2 V
IOOH
VOH = VDD
—
—
0.3
mA
IOOL
VOL = VSS2
–0.3
—
—
mA
Measuring
Circuit
2
25/37
¡ Semiconductor
MSM64162D
DC Characteristics (continued)
(VDD = 0 V, VSS1 = VSSL = –1.5 V, VSS2 = –3.0 V, VSS3 = –4.5 V,
Ta = –40 to +85°C unless otherwise specified)
Parameter
(Pin Name)
Symbol
Condition
Min.
Typ.
Max.
Unit
IIH1
VIH1 = VDD (when pulled down)
30
90
300
mA
IIL1
VIL1 = VSS2 (when pulled up)
–300
–90
–30
mA
IIH1Z
VIH1 = VDD (in a high impedance state)
0
—
1.0
mA
IIL1Z
VIL1 = VSS2 (in a high impedance state) –1.0
—
0
mA
IIH2
VIH2 = VDD (when pulled down)
30
90
300
mA
IIH2Z
VIH2 = VDD (in a high impedance state)
0
—
1.0
mA
IIL2Z
VIL2 = VSS2 (in a high impedance state)
–1.0
—
0
mA
Input Current 3
(RESET, TST1, TST2)
IIH3
VIH3 = VDD
0
—
1.0
mA
IIL3
VIL3 = VSS2
–3.0
–1.5
–0.75
mA
Input Voltage 1
(P0.0 to P0.3)
(P2.0 to P2.3)
(P3.0 to P3.3)
VIH1
—
–0.6
—
0
V
VIL1
—
–3.0
—
–2.4
V
Input Voltage 2
(IN0)
VIH2
—
–0.6
—
0
V
VIL2
—
–3.0
—
–2.4
V
Input Voltage 3
(RESET, TST1, TST2)
VIH3
—
–0.6
—
0
V
VIL3
—
–3.0
—
–2.4
V
Input Current 1
(P0.0 to P0.3)
(P2.0 to P2.3)
(P3.0 to P3.3)
Input Current 2
(IN0)
Measuring
Circuit
3
4
26/37
¡ Semiconductor
MSM64162D
DC Characteristics (continued)
(VDD = 0 V, VSS1 = VSSL = –1.5 V, VSS2 = –3.0 V, VSS3 = –4.5 V,
Ta = –40 to +85°C unless otherwise specified)
Parameter
(Pin Name)
Symbol
Condition
Min.
Typ.
Max.
Unit
0.2
0.5
1.0
V
Hysteresis Width
(P0.0 to P0.3)
(P2.0 to P2.3)
(P3.0 to P3.3)
DVT1
Hysteresis Width
(RESET, TST1, TST2)
DVT2
—
0.2
0.5
1.0
V
Input Pin Capacitance
(P0.0 to P0.3)
(P2.0 to P2.3)
(P3.0 to P3.3)
CIN
—
—
—
5.0
pF
—
Measuring
Circuit
4
1
27/37
¡ Semiconductor
MSM64162D
Measuring circuit 1
CS0
RT0
RI0
RT0
CS0
IN0
XT
Crystal
32.768 kHz
XT
C1
C12
C2
VSSL
VDD
VSS1
A
Cl
VSS2
VSS3
Ca
V
Cb
V
V
: 0.47 mF
: 0.1 mF
: 10 kW/2 kW
: 820 pF
: 10 kW
Cl
Ca, Cb, C12
RT0
CS0
RI0
Measuring circuit 2
(*1)
INPUT
VIH
OUTPUT
(*2)
A
VIL
VDD
VSS1
VSS2
VSS3
VSSL
28/37
¡ Semiconductor
MSM64162D
Measuring circuit 3
INPUT
A
OUTPUT
(*3)
VDD
VSS1
VSS2
VSS3
VSSL
(*3)
INPUT
VIH
OUTPUT
Measuring circuit 4
Waveform
Monitoring
VIL
VDD
VSS1
VSS2
VSS3
VSSL
*1 Input logic circuit to determine the specified measuring conditions.
*2 Measured at the specified output pins.
*3 Measured at the specified input pins.
29/37
¡ Semiconductor
MSM64162D
A/D Converter Characteristics
(VDD = 0 V, VSS2 = –3.0 V, Ta = –40 to +85°C unless otherwise specified)
Parameter
Symbol
Resistor
for Oscillation
RS0, RT0,
RT0-1
Input Current
Limiting Resistor
RI0
Condition
CS0, CT0 ≥ 740 pF
—
Min.
Typ.
Max.
Unit
1.0
—
—
kW
1.0
10
—
kW
Measuring
Circuit
5
Oscillation
Frequency
RS•RT Oscillation
Frequency Ratio(*)
*
fOSC1
Resistor for oscillation = 2 kW
200
239
277
kHz
fOSC2
Resistor for oscillation = 10 kW
46.5
55.4
64.3
kHz
fOSC3
Resistor for oscillation = 200 kW
2.79
3.32
3.85
kHz
Kf1
RT0, RT0-1 = 2 kW
4.115
4.22
4.326
—
Kf2
RT0, RT0-1 = 10 kW
0.990
1.0
1.010
—
Kf3
RT0, RT0-1 = 200 kW
0.0573 0.0616 0.0659
—
Kfx is the ratio of the oscillation frequency by a sensor resistor to the oscillation frequency
by a reference resistor in the same condition.
Kfx =
fOSCX (RT0–CS0 Oscillation)
fOSCX (RT0-1–CS0 Oscillation)
fOSCX (RS0–CS0 Oscillation) ,
(x = 1, 2, 3)
fOSCX (RS0–CS0 Oscillation)
30/37
¡ Semiconductor
MSM64162D
RT0
RT0-1
CT0
RS0
CS0
RI0
Measuring circuit 5
Oscillation Mode Designation
IN0 CS0 RS0 CRT0 RT0
RESET
TST1
TST2
P0.0
P3.3
Frequency
Measurement (fOSCX)
D. U. T.
P0.1
P0.2
P0.3
VDD
VSSL
VSS2
Cl
RT0, RT0-1 = 2 kW/10 kW/200 kW
RS0 = 10 kW
RI0 = 10 kW
CS0, CT0 = 820 pF
Cl = 0.47 mF
31/37
¡ Semiconductor
MSM64162D
FUNCTIONAL DESCRIPTION
• A/D converter (ADC)
The MSM64162D has a built-in 1-channel RC oscillation type A/D converter. The A/D converter
is composed of a 1-channel oscillation circuit, Counter A (CNTA0-4, a 4.8-digit decade counter),
Counter B (CNTB0-3, a 14-bit binary counter), and A/D Converter Control Registers 0 and 1
(ADCON0, ADCON1).
By counting oscillation frequencies that vary depending on a resistor or capacitor connected to
the RC oscillation circuit, the A/D converter converts resistance values or capacitance values to
corresponding digital values. By using a thermistor or humidity sensor as a resistance, a
thermometer or a hygrometer can be constructed.
• LCD driver (LCD)
The MSM64162D has a built-in LCD driver for 24 outputs.
The LCD driver consists of 21 ¥ 4-bit display registers (DSPR0-20), the Display Control Register
(DSPCON), a 24-output LCD driver circuit, and a bias generation circuit (BIAS).
There are three types of driving methods: 1/4 duty, 1/3 duty and 1/2 duty. Software selects the
duty mode.
A mask option can select either a common driver or a segment driver for each LCD driver pin.
A mask option can also specify assignment of each bit of the display register to each segment.
All the display registers must be selected by a mask option.
L16 to L23 of the LCD driver can be configured to be output ports by a mask option.
The relationship between the duty, the bias method, and the maximum segment number follows:
1/4 duty 1/3 bias method ------- 80 segments
1/3 duty 1/3 bias method ------- 63 segments
1/2 duty 1/2 bias method ------- 44 segments
• Buzzer driver (BD)
The MSM64162D has a built-in buzzer driver with 2 buzzer output frequencies and 4 buzzer
output modes. Each buzzer output is selected by the Buzzer Control Register (BDCON) and the
Buzzer Frequency Control Register (BFCON).
• Capture circuit (CAPR)
The MSM64162D captures 32 Hz to 256 Hz output of the time base counter at the falling of Port
0.0 or 0.1 (P0.0 or P0.1) to "L" level when the pull-up resistor input is chosen, or at the rising to
"H" level when the pull-down resistor input is chosen. The capture circuit is composed of the
Capture Control Register (CAPCON) and the Capture Registers (CAPR0, CAPR1) that fetch
output from the time base counter.
• Watchdog timer (WDT)
The MSM64162D has a built-in watchdog timer to detect CPU malfunction. The watchdog timer
is composed of a 6-bit watchdog timer counter (WDTC) to count a 16 Hz output and a watchdog
timer control register (WDTCON) to reset WDTC.
32/37
¡ Semiconductor
MSM64162D
• Clock generation circuit (CLKG)
The clock generation circuit (CLKG) in the MSM64162D contains a 32.768 kHz crystal oscillation
circuit. This circuit generates the system clock (CLK) and the time base clock (32.768 kHz).
The system clock drives the CPU while the time base clock drives the time base counter and the
buzzer driver.
The system clock frequency is 32.768 kHz, which is the output of the crystal oscillation circuit.
• Time base counter (TBC)
The MSM64162D has a built-in time base counter (TBC) that generates clocks to be supplied to
internal peripheral circuits. The time base counter is composed of 15 binary counters. The count
clock of the time base is driven by the oscillation clock (32.768 kHz) of the crystal oscillation
circuit. The output of the time base counter is used for the buzzer driver, the system reset circuit,
the watchdog timer, the time base interrupt, the sampling clocks of each port, and the capture
circuit.
• I/O port
Input-output ports (P2, P3) (8 bits)
Input port (P0) (4 bits)
Output port (P1) (4 bits)
: Pull-up (pull-down) resistor input or highimpedance input, CMOS output or NMOS
open drain output: these can be specified for
each bit; external 0 interrupt
: Pull-up (pull-down) resistor input or highimpedance input; external 1 interrupt
: CMOS output or NMOS open drain output
• Interrupt (INTC)
The MSM64162D has 9 interrupt sources (9 vector addresses), of which two are external
interrupts from ports and seven are internal interrupts.
Of the nine interrupt sources, only the watchdog interrupt cannot be disabled (non-maskable
interrupt). The other eight interrupts are controlled by the master interrupt enable flag (MI) and
the interrupt enable registers (IE0, IE1 and IE2). When an interrupt condition is met, the CPU
branches to a vector address corresponding to the interrupt source.
• Battery check circuit (BC)
The battery check circuit (BC) detects the level of the supply voltage by comparing the voltage
generated by an external supply-voltage dividing resistor (RBLD) with the internal reference
voltage (Vrb).
33/37
L23
L0
VDD
C2
C1
VSS3
VSS2
MSM64162D-xxx
(1.5 V spec.)
VSS1
VSSL
TST2
TST1
C1
C12
1.5 V
Cb
Ca
Cl
IN0
CS0
RS0
CRT0
RT0
BD
XT
XT
RESET
P1.0
P1.1
P1.2
P1.3
P0.0
P0.1
P0.2
P0.3
P3.3
1.5 V Spec. Application Circuit
Crystal
32.768 kHz
¡ Semiconductor
APPLICATION CIRCUITS
LCD
Switch matrix
(4 ¥ 4)
RT0
RS0
34/37
OSC monitor
MSM64162D
Buzzer
CS0 RI0
L0
VDD
C2
C1
C12
VSS3
Cb
VSS2
MSM64162D-xxx
(3.0 V spec.)
VSS1
VSSL
TST2
TST1
IN0
CS0
RS0
Switch matrix
CRT0
RT0
BD
P3.3
P3.1
3.0 V Spec. Application Circuit
CGEX
XT
XT
RESET
P1.0
P1.1
P1.2
P1.3
P0.0
P0.1
P0.2
P0.3
C2
3V
¡ Semiconductor
L23
Crystal
32.768 kHz
APPLICATION CIRCUITS (continued)
LCD
Ca
Cl
• Battery check
circuit is used
• CGEX of crystal
oscillator: External
RT0
(4 ¥ 4)
RS0
CS0 RI0
RBLD
35/37
OSC monitor
MSM64162D
Buzzer
¡ Semiconductor
MSM64162D
PACKAGE DIMENSIONS
(Unit : mm)
QFP64-P-1420-1.00-BK
Mirror finish
Package material
Lead frame material
Pin treatment
Solder plate thickness
Package weight (g)
Epoxy resin
42 alloy
Solder plating
5 mm or more
1.25 TYP.
Notes for Mounting the Surface Mount Type Package
The SOP, QFP, TSOP, SOJ, QFJ (PLCC), SHP and BGA are surface mount type packages, which
are very susceptible to heat in reflow mounting and humidity absorbed in storage.
Therefore, before you perform reflow mounting, contact Oki’s responsible sales person for the
product name, package name, pin number, package code and desired mounting conditions
(reflow method, temperature and times).
36/37
¡ Semiconductor
MSM64162D
(Unit : mm)
QFP80-P-1420-0.80-BK
Mirror finish
Package material
Lead frame material
Pin treatment
Solder plate thickness
Epoxy resin
42 alloy
Solder plating
5 mm or more
Package weight (g)
1.27 TYP.
Notes for Mounting the Surface Mount Type Package
The SOP, QFP, TSOP, SOJ, QFJ (PLCC), SHP and BGA are surface mount type packages, which
are very susceptible to heat in reflow mounting and humidity absorbed in storage.
Therefore, before you perform reflow mounting, contact Oki’s responsible sales person for the
product name, package name, pin number, package code and desired mounting conditions
(reflow method, temperature and times).
37/37