TPS5450-EP www.ti.com ....................................................................................................................................................................................................... SLVS935 – JULY 2009 5-A, WIDE INPUT RANGE, STEP-DOWN SWIFT™ CONVERTER FEATURES 1 • Qualified for Automotive Applications • Wide Input Voltage Range: 5.5 V to 36 V • Up to 5-A Continuous (6-A Peak) Output Current • High Efficiency Greater than 90% Enabled by 110-mΩ Integrated MOSFET Switch • Wide Output Voltage Range: Adjustable Down to 1.22 V with 1.5% Initial Accuracy • Internal Compensation Minimizes External Parts Count • Fixed 500-kHz Switching Frequency for Small Filter Size • 18-µA Shutdown Supply Current • Improved Line Regulation and Transient Response by Input Voltage Feed Forward • System Protected by Overcurrent Limiting, Overvoltage Protection, and Thermal Shutdown • Available in Small Thermally Enhanced 8-Pin SOIC PowerPAD™ Package • For SWIFT™ Documentation, Application Reports and Design Software, See the TI Website at www.ti.com/swift 2 APPLICATIONS • • • • High-Density Point-of-Load Regulators LCD Displays, Plasma Displays Battery Chargers 12-V/24-V Distributed Power Systems SUPPORTS DEFENSE, AEROSPACE, AND MEDICAL APPLICATIONS • • • • • • • Controlled Baseline One Assembly/Test Site One Fabrication Site Available in Military (–55°C/125°C) Temperature Range (1) Extended Product Life Cycle Extended Product-Change Notification Product Traceability DESCRIPTION As a member of the SWIFT™ family of DC/DC regulators, the TPS5450 is a high-output-current PWM converter that integrates a low-resistance high-side N-channel MOSFET. Included on the substrate with the listed features are a high-performance voltage error amplifier that provides tight voltage regulation accuracy under transient conditions, an undervoltage-lockout circuit to prevent start-up until the input voltage reaches 5.5 V, an internally set slow-start circuit to limit inrush currents, and a voltage feed-forward circuit to improve the transient response. Using the ENA pin, shutdown supply current is reduced to 18 µA typically. Other features include an active-high enable, overcurrent limiting, overvoltage protection, and thermal shutdown. To reduce design complexity and external component count, the TPS5450 feedback loop is internally compensated. The TPS5450 device is available in a thermally enhanced, 8-pin SOIC PowerPAD™ package. TI provides evaluation modules and software tools to aid in achieving high-performance power supply designs to meet aggressive equipment development cycles. (1) Additional temperature ranges are available - contact factory 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. SWIFT, PowerPAD are trademarks of Texas Instruments. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2009, Texas Instruments Incorporated TPS5450-EP SLVS935 – JULY 2009 ....................................................................................................................................................................................................... www.ti.com Efficiency vs Output Current Simplified Schematic 100 VIN VIN VOUT PH 95 90 BOOT Efficiency - % NC NC ENA VSENSE 85 80 75 70 VI = 12 V, VO = 5 V, fs = 500 kHz, TA = 25°C 65 GND 60 55 50 0 1 2 3 4 5 IO - Output Current - A 6 These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ORDERING INFORMATION (1) PACKAGE (2) TA –55°C to 125°C (1) (2) Thermally Enhanced SOIC – DDA ORDERABLE PART NUMBER TOP-SIDE MARKING TPS5450MDDAREP 5450EP Reel of 2500 For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI web site at www.ti.com. Package drawings, thermal data, and symbolization are available at www.ti.com/packaging. ABSOLUTE MAXIMUM RATINGS over operating free-air temperature range (unless otherwise noted) (1) (2) VIN BOOT PH (steady-state) VI Input voltage range ENA –0.3 V to 40 V (3) –0.3 V to 50 V –0.6 V to 40 V (3) –0.3 V to 7 V BOOT-PH 10 V VSENSE –0.3 V to 3 V PH (transient < 10 ns) –1.2 V IO Source current PH Ilkg Leakage current PH TJ Operating virtual-junction temperature range –55°C to 150°C Tstg Storage temperature –65°C to 150°C (1) (2) (3) 2 Internally Limited 10 µA Stresses beyond those listed under the absolute maximum ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under the recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage values are with respect to network ground terminal. Approaching the absolute maximum rating for the VIN pin may cause the voltage on the PH pin to exceed the absolute maximum rating. Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TPS5450-EP TPS5450-EP www.ti.com ....................................................................................................................................................................................................... SLVS935 – JULY 2009 DISSIPATION RATINGS (1) (1) (2) (3) (2) PACKAGE THERMAL IMPEDANCE JUNCTION-TO-AMBIENT 8-Pin DDA (4-layer board with solder) (3) 30°C/W Maximum power dissipation may be limited by overcurrent protection. Power rating at a specific ambient temperature TA should be determined with a junction temperature of 125°C. This is the point where distortion starts to substantially increase. Thermal management of the final PCB should strive to keep the junction temperature at or below 125°C for best performance and long-term reliability. See Thermal Calculations in applications section of this data sheet for more information. Test board conditions: a. 2 in x 1.85 in, 4 layers, 0.062-in (1,57-mm) thickness b. 2-oz copper traces located on the top and bottom of the PCB c. 2-oz copper ground planes on the two internal layers d. Four thermal vias in the PowerPAD area under the device package RECOMMENDED OPERATING CONDITIONS MIN MAX VI Input voltage range 5.5 36 UNIT V TJ Operating junction temperature –55 125 °C TYP MAX UNIT 3 4.4 mA 18 60 µA ELECTRICAL CHARACTERISTICS TJ = –55°C to 125°C, VIN = 5.5 V to 36 V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN SUPPLY VOLTAGE (VIN PIN) IQ Quiescent current VSENSE = 2 V, Not switching, PH pin open Shutdown, ENA = 0 V UNDERVOLTAGE LOCK OUT (UVLO) Start threshold voltage, UVLO 5.3 V Hysteresis voltage, UVLO 330 mV VOLTAGE REFERENCE Voltage reference accuracy TJ = 25°C 1.202 1.221 1.239 IO = 0 A – 5 A; TJ = Full Range 1.193 1.221 1.245 TJ = 25°C 400 500 600 TJ = Full Range 375 500 600 150 220 V OSCILLATOR Internally set free-running frequency Minimum controllable on time Maximum duty cycle 87 89 kHz ns % ENABLE (ENA PIN) Start threshold voltage, ENA 1.3 Stop threshold voltage, ENA 0.5 Hysteresis voltage, ENA V 450 Internal slow-start time (0~100%) V 5.4 8 TJ = 25°C 6.0 TJ = Full Range 4.4 TJ = 25°C TJ = Full Range mV 10 ms 7.5 9.0 A 7.5 11.7 13 16 20 13 16 22.5 135 162 °C 14 °C CURRENT LIMIT Current limit Current limit hiccup time ms THERMAL SHUTDOWN Thermal shutdown trip point Thermal shutdown hysteresis Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TPS5450-EP 3 TPS5450-EP SLVS935 – JULY 2009 ....................................................................................................................................................................................................... www.ti.com ELECTRICAL CHARACTERISTICS (continued) TJ = –55°C to 125°C, VIN = 5.5 V to 36 V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT OUTPUT MOSFET rDS(on) High-side power MOSFET switch VIN = 5.5 V 150 110 mΩ PIN ASSIGNMENTS DDA PACKAGE (TOP VIEW) 8 PH 7 VIN 3 6 GND 4 5 ENA BOOT 1 NC 2 NC VSENSE PowerPAD (Pin 9) TERMINAL FUNCTIONS TERMINAL NAME NO. BOOT 1 NC 2, 3 DESCRIPTION Boost capacitor for the high-side FET gate driver. Connect 0.01-µF low-ESR capacitor from BOOT pin to PH pin. No internal connection VSENSE 4 Feedback voltage for the regulator. Connect to output voltage divider. ENA 5 On/off control. Below 0.5 V, the device stops switching. Float the pin to enable. GND 6 Ground. Connect to thermal pad. VIN 7 Input supply voltage. Bypass VIN pin to GND pin close to device package with a high-quality low-ESR ceramic capacitor. PH 8 Source of the high side power MOSFET. Connected to external inductor and diode. PowerPAD 9 GND pin must be connected to the exposed pad for proper operation. 4 Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TPS5450-EP TPS5450-EP www.ti.com ....................................................................................................................................................................................................... SLVS935 – JULY 2009 TYPICAL CHARACTERISTICS OSCILLATOR FREQUENCY vs JUNCTION TEMPERATURE NON-SWITCHING QUIESCENT CURRENT vs JUNCTION TEMPERATURE 530 3.5 VI = 12 V I Q−Quiescent Current −mA f − Oscillator Frequency − kHz 520 510 500 490 480 3.25 3 2.75 470 460 −50 −25 0 25 50 75 100 2.5 −50 125 −25 50 75 100 Figure 2. SHUTDOWN QUIESCENT CURRENT vs INPUT VOLTAGE VOLTAGE REFERENCE vs JUNCTION TEMPERATURE 20 T J = 125°C 15 T J = 27°C T J = –40°C 10 5 0 5 10 15 20 25 30 35 1.225 1.220 1.215 1.210 -50 40 -25 V I −Input V oltage −V 0 25 50 75 100 TJ - Junction Temperature - °C Figure 3. Figure 4. ON RESISTANCE vs JUNCTION TEMPERATURE INTERNAL SLOW START TIME vs JUNCTION TEMPERATURE 125 9 180 V I = 12 V TSS − Internal Slow Start Time − ms 170 125 1.230 ENA = 0 V VREF - Voltage Reference - V −µ A I SD −Shutdown Current 25 Figure 1. 25 160 150 140 130 120 110 r DS(on) −On Resistance −mΩ 0 T J −Junction T emperature − °C T − Junction Temperature − °C 100 8.5 8 7.5 90 80 −50 −25 0 25 50 75 100 T J −Junction Temperature − °C 125 7 −50 Figure 5. −25 0 25 50 75 100 TJ − Junction Temperature − °C 125 Figure 6. Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TPS5450-EP 5 TPS5450-EP SLVS935 – JULY 2009 ....................................................................................................................................................................................................... www.ti.com TYPICAL CHARACTERISTICS (continued) MINIMUM CONTROLLABLE ON TIME vs JUNCTION TEMPERATURE MINIMUM CONTROLLABLE DUTY RATIO vs JUNCTION TEMPERATURE 8 170 7.75 Minimum Duty Ratio - % Minimum Controllable On Time − ns 180 160 150 140 7.50 7.25 130 120 −50 −25 0 25 50 75 100 TJ − Junction Temperature − °C 125 7 -50 Figure 7. 6 -25 50 0 25 75 100 TJ - Junction Temperature - °C 125 Figure 8. Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TPS5450-EP TPS5450-EP www.ti.com ....................................................................................................................................................................................................... SLVS935 – JULY 2009 APPLICATION INFORMATION FUNCTIONAL BLOCK DIAGRAM VIN VIN 1.221 V Bandgap Reference UVLO VREF SHDN Slow Start Boot Regulator BOOT HICCUP 5 µA ENABLE ENA SHDN SHDN VSENSE Z1 Thermal Protection SHDN NC VIN Ramp Generator NC SHDN VSENSE HICCUP PWM Comparator Overcurrent Protection Oscillator OVP Z2 Feed Forward Gain = 25 SHDN GND POWERPAD Error Amplifier SHDN SHDN Gate Drive Control 112.5% VREF Gate Driver SHDN BOOT PH VOUT DETAILED DESCRIPTION Oscillator Frequency The internal free-running oscillator sets the PWM switching frequency at 500 kHz. The 500-kHz switching frequency allows less output inductance for the same output ripple requirement resulting in a smaller output inductor. Voltage Reference The voltage reference system produces a precision reference signal by scaling the output of a temperature stable bandgap circuit. The bandgap and scaling circuits are trimmed during production testing to an output of 1.221 V at room temperature. Enable (ENA) and Internal Slow Start The ENA pin provides electrical on/off control of the regulator. Once the ENA pin voltage exceeds the threshold voltage, the regulator starts operation and the internal slow start begins to ramp. If the ENA pin voltage is pulled below the threshold voltage, the regulator stops switching and the internal slow start resets. Connecting the pin to ground or to any voltage less than 0.5 V disables the regulator and activates the shutdown mode. The quiescent current of the TPS5450 in shutdown mode is 18 µA (typical). Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TPS5450-EP 7 TPS5450-EP SLVS935 – JULY 2009 ....................................................................................................................................................................................................... www.ti.com The ENA pin has an internal pullup current source, allowing the user to float the ENA pin. If an application requires controlling the ENA pin, use open drain or open collector output logic to interface with the pin. To limit the start-up inrush current, an internal slow-start circuit is used to ramp up the reference voltage from 0 V to its final value, linearly. The internal slow start time is 8 ms (typical). Undervoltage Lockout (UVLO) The TPS5450 incorporates an undervoltage lockout circuit to keep the device disabled when VIN (the input voltage) is below the UVLO start voltage threshold. During power up, internal circuits are held inactive and the internal slow start is grounded until VIN exceeds the UVLO start threshold voltage. Once the UVLO start threshold voltage is reached, the internal slow start is released and device start-up begins. The device operates until VIN falls below the UVLO stop threshold voltage. The typical hysteresis in the UVLO comparator is 330 mV. Boost Capacitor (BOOT) Connect a 0.01-µF low-ESR ceramic capacitor between the BOOT pin and PH pin. This capacitor provides the gate drive voltage for the high-side MOSFET. X7R or X5R grade dielectrics are recommended due to their stable values over temperature. Output Feedback (VSENSE) and Internal Compensation The output voltage of the regulator is set by feeding back the center point voltage of an external resistor divider network to the VSENSE pin. In steady-state operation, the VSENSE pin voltage should be equal to the voltage reference 1.221 V. The TPS5450 implements internal compensation to simplify the regulator design. Because the TPS5450 uses voltage-mode control, a type 3 compensation network has been designed on chip to provide a high crossover frequency and a high phase margin for good stability. See the Internal Compensation Network section for more details. Voltage Feed Forward The internal voltage feed forward provides a constant dc power stage gain despite any variations with the input voltage. This greatly simplifies the stability analysis and improves the transient response. Voltage feed forward varies the peak ramp voltage inversely with the input voltage so that the modulator and power stage gain are constant at the feed forward gain: VIN Feed Forward Gain + Ramp pk*pk (1) The typical feed forward gain of TPS5450 is 25. Pulse-Width-Modulation (PWM) Control The regulator employs a fixed frequency pulse-width-modulator (PWM) control method. First, the feedback voltage (VSENSE pin voltage) is compared to the constant voltage reference by the high-gain error amplifier and compensation network to produce a error voltage. Then, the error voltage is compared to the ramp voltage by the PWM comparator. In this way, the error-voltage magnitude is converted to a pulse width, which is the duty cycle. Finally, the PWM output is fed into the gate drive circuit to control the on-time of the high-side MOSFET. Overcurrent Limiting Overcurrent limiting is implemented by sensing the drain-to-source voltage across the high-side MOSFET. The drain to source voltage is then compared to a voltage level representing the overcurrent threshold limit. If the drain-to-source voltage exceeds the overcurrent threshold limit, the overcurrent indicator is set true. The system ignores the overcurrent indicator for the leading edge blanking time at the beginning of each cycle to avoid any turn-on noise glitches. Once overcurrent indicator is set true, overcurrent limiting is triggered. The high-side MOSFET is turned off for the rest of the cycle after a propagation delay. The overcurrent limiting mode is called cycle-by-cycle current limiting. 8 Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TPS5450-EP TPS5450-EP www.ti.com ....................................................................................................................................................................................................... SLVS935 – JULY 2009 Sometimes under serious overload conditions such as short-circuit, the overcurrent runaway may still happen when using cycle-by-cycle current limiting. A second mode of current limiting is used, i.e. hiccup mode overcurrent limiting. During hiccup mode overcurrent limiting, the voltage reference is grounded and the high-side MOSFET is turned off for the hiccup time. Once the hiccup time duration is complete, the regulator restarts under control of the slow start circuit. Overvoltage Protection The TPS5450 has an overvoltage protection (OVP) circuit to minimize voltage overshoot when recovering from output fault conditions. The OVP circuit includes an overvoltage comparator to compare the VSENSE pin voltage and a threshold of 112.5% × VREF. Once the VSENSE pin voltage is higher than the threshold, the high-side MOSFET is forced off. When the VSENSE pin voltage drops lower than the threshold, the high-side MOSFET is enabled again. Thermal Shutdown The TPS5450 protects itself from overheating with an internal thermal shutdown circuit. If the junction temperature exceeds the thermal shutdown trip point, the voltage reference is grounded and the high-side MOSFET is turned off. The part is restarted under control of the slow start circuit automatically when the junction temperature drops 14°C below the thermal shutdown trip point. PCB Layout Connect a low ESR ceramic bypass capacitor to the VIN pin. Care should be taken to minimize the loop area formed by the bypass capacitor connections, the VIN pin, and the TPS5450 ground pin. The best way to do this is to extend the top side ground area from under the device adjacent to the VIN trace, and place the bypass capacitor as close as possible to the VIN pin. The minimum recommended bypass capacitance is 4.7 µF ceramic with a X5R or X7R dielectric. There should be a ground area on the top layer directly underneath the IC, with an exposed area for connection to the PowerPAD. Use vias to connect this ground area to any internal ground planes. Use additional vias at the ground side of the input and output filter capacitors as well. The GND pin should be tied to the PCB ground by connecting it to the ground area under the device as shown below. The PH pin should be routed to the output inductor, catch diode and boot capacitor. Since the PH connection is the switching node, the inductor should be located very close to the PH pin and the area of the PCB conductor minimized to prevent excessive capacitive coupling. The catch diode should also be placed close to the device to minimize the output current loop area. Connect the boot capacitor between the phase node and the BOOT pin as shown. Keep the boot capacitor close to the IC and minimize the conductor trace lengths. The component placements and connections shown work well, but other connection routings also may be effective. Connect the output filter capacitor(s) as shown between the VOUT trace and GND. It is important to keep the loop formed by the PH pin, Lout, Cout and GND as small as is practical. Connect the VOUT trace to the VSENSE pin using the resistor divider network to set the output voltage. Do not route this trace too close to the PH trace. Due to the size of the IC package and the device pin-out, the trace may need to be routed under the output capacitor. Alternately, the routing may be done on an alternate layer if a trace under the output capacitor is not desired. If using the grounding scheme shown in Figure 9, use a via connection to a different layer to route to the ENA pin. Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TPS5450-EP 9 TPS5450-EP SLVS935 – JULY 2009 ....................................................................................................................................................................................................... www.ti.com Feedback Trace OUTPUT INDUCTOR BOOT CAPACITOR PH BOOT NC INPUT BYPASS CAPACITOR Vout PH Vin VIN EXPOSED POWERPAD AREA RESISTOR DIVIDER NC GND VSENSE ENA OUTPUT FILTER CAPACITOR CATCH DIODE TOPSIDE GROUND AREA Route INPUT VOLTAGE trace under the catch diode and output capacitor or on another layer Signal VIA Figure 9. Design Layout Figure 10. TPS5450 Land Pattern 10 Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TPS5450-EP TPS5450-EP www.ti.com ....................................................................................................................................................................................................... SLVS935 – JULY 2009 Application Circuits Figure 11 shows the schematic for a typical TPS5450 application. The TPS5450 can provide up to 5-A output current at a nominal output voltage of 5 V. For proper thermal performance, the exposed PowerPAD™ underneath the device must be soldered down to the printed-circuit board. Figure 11. Application Circuit, 12-V to 5.0-V Design Procedure The following design procedure can be used to select component values for the TPS5450. Alternately, the SWIFT™ Designer Software may be used to generate a complete design. The SWIFT™ Designer Software uses an iterative design procedure and accesses a comprehensive database of components when generating a design. This section presents a simplified discussion of the design process. To begin the design process a few parameters must be decided upon. The designer needs to know the following: • Input voltage range • Output voltage • Input ripple voltage • Output ripple voltage • Output current rating • Operating frequency Design Parameters For this design example, use the following as the input parameters: (1) DESIGN PARAMETER (1) EXAMPLE VALUE Input voltage range 10 V to 31 V Output voltage 5V Input ripple voltage 400 mV Output ripple voltage 30 mV Output current rating 5A Operating frequency 500 kHz As an additional constraint, the design is set up to be small size and low component height. Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TPS5450-EP 11 TPS5450-EP SLVS935 – JULY 2009 ....................................................................................................................................................................................................... www.ti.com Switching Frequency The switching frequency for the TPS5450 is internally set to 500 kHz. It is not possible to adjust the switching frequency. Input Capacitors The TPS5450 requires an input decoupling capacitor and, depending on the application, a bulk input capacitor. The minimum recommended decoupling capacitance is 4.7 µF. A high-quality ceramic type X5R or X7R is required. For some applications, a smaller value decoupling capacitor may be used, so long as the input voltage and current ripple ratings are not exceeded. The voltage rating must be greater than the maximum input voltage, including ripple. This input ripple voltage can be approximated by Equation 2 : DVIN + I OUT(MAX) C BULK 0.25 ƒsw ǒ ) I OUT(MAX) Ǔ ESR MAX (2) Where IOUT(MAX) is the maximum load current, fSW is the switching frequency, CIN is the input capacitor value and ESRMAX is the maximum series resistance of the input capacitor. For this design, the input capacitance consists of two 4.7 µF capacitors, C1 and C4, in parallel. An additional high-frequency bypass capacitor, C5 is also used. The maximum RMS ripple current also needs to be checked. For worst case conditions, this can be approximated by Equation 3 : I OUT(MAX) I + CIN 2 (3) In this case the input ripple voltage would be 281 mV and the RMS ripple current would be 2.5 A. The maximum voltage across the input capacitors would be VIN max plus delta VIN/2. The chosen input decoupling capacitor is rated for 50 V, and the ripple current capacity is greater than 2.5 A each, providing ample margin. It is very important that the maximum ratings for voltage and current are not exceeded under any circumstance. Additionally some bulk capacitance may be needed, especially if the TPS5450 circuit is not located within about 2 inches from the input voltage source. The value for this capacitor is not critical but it also should be rated to handle the maximum input voltage including ripple voltage and should filter the output so that input ripple voltage is acceptable. Output Filter Components Two components need to be selected for the output filter, L1 and C2. Because the TPS5450 is an internally compensated device, a limited range of filter component types and values can be supported. Inductor Selection To calculate the minimum value of the output inductor, use Equation 4: V ǒ Ǔ V * V OUT(MAX) IN(MAX) OUT L + MIN V K I F IN(MAX) IND OUT SW(MIN) (4) KIND is a coefficient that represents the amount of inductor ripple current relative to the maximum output current. Three things need to be considered when determining the amount of ripple current in the inductor: the peak-to-peak ripple current affects the output ripple voltage amplitude, the ripple current affects the peak switch current, and the amount of ripple current determines at what point the circuit becomes discontinuous. For designs using the TPS5450, KIND of 0.2 to 0.3 yields good results. Low output ripple voltages can be obtained when paired with the proper output capacitor, the peak switch current will be well below the current limit set point, and relatively low load currents can be sourced before discontinuous operation. For this design example use KIND = 0.2 and the minimum inductor value is calculated to be 10.4 µH. A higher standard value is 15 µH, which is used in this design. 12 Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TPS5450-EP TPS5450-EP www.ti.com ....................................................................................................................................................................................................... SLVS935 – JULY 2009 For the output filter inductor it is important that the RMS current and saturation current ratings not be exceeded. The RMS inductor current can be found from Equation 5: I L(RMS) + Ǹ 1 I2 ) OUT(MAX) 12 ǒ V V OUT ǒVIN(MAX) * VOUTǓ L IN(MAX) OUT F Ǔ 2 SW(MIN) (5) and the peak inductor current can be determined with Equation 6: V I L(PK) + I OUT(MAX) ) 1.6 OUT ǒVIN(MAX) * VOUTǓ V IN(MAX) L OUT F SW(MIN) (6) For this design, the RMS inductor current is 5.004 A, and the peak inductor current is 5.34 A. The chosen inductor is a Sumida CDRH1127/LD-150 15µH. It has a minimum rated current of 5.65 A for both saturation and RMS current. In general, inductor values for use with the TPS5450 are in the range of 10 µH to 100 µH. Capacitor Selection The important design factors for the output capacitor are dc voltage rating, ripple current rating, and equivalent series resistance (ESR). The dc voltage and ripple current ratings cannot be exceeded. The ESR is important because, along with the inductor ripple current, it determines the amount of output ripple voltage. The actual value of the output capacitor is not critical, but some practical limits do exist. Consider the relationship between the desired closed loop crossover frequency of the design and LC corner frequency of the output filter. Due to the design of the internal compensation, it is desirable to keep the closed loop crossover frequency in the range 3 kHz to 30 kHz, as this frequency range has adequate phase boost to allow for stable operation. For this design example, it is assumed that the intended closed loop crossover frequency is between 2590 Hz and 24 kHz and also below the ESR zero of the output capacitor. Under these conditions the closed loop crossover frequency is related to the LC corner frequency by: f CO + f LC 2 85 VOUT (7) And the desired output capacitor value for the output filter to: 1 C OUT + 3357 L OUT f CO V OUT (8) For a desired crossover of 12 kHz and a 15-µH inductor, the calculated value for the output capacitor is 330 µF. The capacitor type should be chosen so that the ESR zero is above the loop crossover. The maximum ESR should be: 1 ESR MAX + 2p C OUT f CO (9) The maximum ESR of the output capacitor also determines the amount of output ripple as specified in the initial design parameters. The output ripple voltage is the inductor ripple current times the ESR of the output filter. Check that the maximum specified ESR as listed in the capacitor data sheet results in an acceptable output ripple voltage: VPP (MAX) = ESRMAX x VOUT x ( VIN(MAX) - VOUT ) NC x VIN(MAX) x LOUT x FSW (10) Where: ΔVPP is the desired peak-to-peak output ripple. NC is the number of parallel output capacitors. FSW is the switching frequency. Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TPS5450-EP 13 TPS5450-EP SLVS935 – JULY 2009 ....................................................................................................................................................................................................... www.ti.com For this design example, a single 330-µF output capacitor is chosen for C3. The calculated RMS ripple current is 143 mA and the maximum ESR required is 40 mΩ. A capacitor that meets these requirements is a Sanyo Poscap 10TPB330M, rated at 10 V with a maximum ESR of 35 mΩ and a ripple current rating of 3 A. An additional small 0.1-µF ceramic bypass capacitor, C6 is also used in this design. The minimum ESR of the output capacitor should also be considered. For good phase margin, the ESR zero when the ESR is at a minimum should not be too far above the internal compensation poles at 24 kHz and 54 kHz. The selected output capacitor must also be rated for a voltage greater than the desired output voltage plus one half the ripple voltage. Any derating amount must also be included. The maximum RMS ripple current in the output capacitor is given by Equation 11: ICOUT(RMS) + 1 Ǹ12 ȡ VOUT ǒVIN(MAX) * VOUTǓ ȣ ȧVIN(MAX) LOUT FSW NCȧ Ȣ Ȥ (11) Where: NC is the number of output capacitors in parallel. FSW is the switching frequency. Other capacitor types can be used with the TPS5450, depending on the needs of the application. Output Voltage Setpoint The output voltage of the TPS5450 is set by a resistor divider (R1 and R2) from the output to the VSENSE pin. Calculate the R2 resistor value for the output voltage of 5 V using Equation 12: R1 1.221 R2 + V * 1.221 OUT (12) For any TPS5450 design, start with an R1 value of 10 kΩ. For an output voltage closest to but at least 5 V, R2 is 3.16 kΩ. Boot Capacitor The boot capacitor should be 0.01 µF. Catch Diode The TPS5450 is designed to operate using an external catch diode between PH and GND. The selected diode must meet the absolute maximum ratings for the application: Reverse voltage must be higher than the maximum voltage at the PH pin, which is VINMAX + 0.5 V. Peak current must be greater than IOUTMAX plus on half the peak to peak inductor current. Forward voltage drop should be small for higher efficiencies. It is important to note that the catch diode conduction time is typically longer than the high-side FET on time, so attention paid to diode parameters can make a marked improvement in overall efficiency. Additionally, check that the device chosen is capable of dissipating the power losses. For this design, a Diodes, Inc. B540A is chosen, with a reverse voltage of 40 V, forward current of 5 A, and a forward voltage drop of 0.5 V. ADVANCED INFORMATION Output Voltage Limitations Due to the internal design of the TPS5450, there are both upper and lower output voltage limits for any given input voltage. The upper limit of the output voltage set point is constrained by the maximum duty cycle of 87% and is given by: V OUTMAX + 0.87 14 ǒǒVINMIN * I OMAX Ǔ Ǔ ǒ 0.230 ) VD * I OMAX Submit Documentation Feedback Ǔ RL * VD (13) Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TPS5450-EP TPS5450-EP www.ti.com ....................................................................................................................................................................................................... SLVS935 – JULY 2009 Where VINMIN = minimum input voltage IOMAX = maximum load current VD = catch diode forward voltage. RL= output inductor series resistance. This equation assumes maximum on resistance for the internal high side FET. The lower limit is constrained by the minimum controllable on time, which may be as high as 200 ns. The approximate minimum output voltage for a given input voltage and minimum load current is given by: V OUTMIN + 0.12 ǒǒVINMAX * I OMIN Ǔ Ǔ ǒ 0.110 ) VD * I OMIN Ǔ RL * VD (14) Where VINMAX = maximum input voltage IOMIN = minimum load current VD = catch diode forward voltage. RL= output inductor series resistance. This equation assumes nominal on resistance for the high-side FET and accounts for worst case variation of operating frequency set point. Any design operating near the operational limits of the device should be carefully checked to ensure proper functionality. Internal Compensation Network The design equations given in the example circuit can be used to generate circuits using the TPS5450. These designs are based on certain assumptions and will tend to always select output capacitors within a limited range of ESR values. If a different capacitor type is desired, it may be possible to fit one to the internal compensation of the TPS5450. Equation 15 gives the nominal frequency response of the internal voltage-mode type III compensation network: s s 1) 1) 2p Fz1 2p Fz2 H(s) + s s s s 1) 1) 1) 2p Fp0 2p Fp1 2p Fp2 2p Fp3 (15) ǒ ǒ Ǔ ǒ Ǔ ǒ Ǔ ǒ Ǔ Ǔ ǒ Ǔ Where Fp0 = 2165 Hz, Fz1 = 2170 Hz, Fz2 = 2590 Hz Fp1 = 24 kHz, Fp2 = 54 kHz, Fp3 = 440 kHz Fp3 represents the non-ideal parasitics effect. Using this information along with the desired output voltage, feed forward gain and output filter characteristics, the closed loop transfer function can be derived. Thermal Calculations The following formulas show how to estimate the device power dissipation under continuous conduction mode operations. They should not be used if the device is working at light loads in the discontinuous conduction mode. Conduction Loss: Pcon = IOUT2 x RDS(on) x VOUT/VIN Switching Loss: Psw = VIN x IOUT x 0.01 Quiescent Current Loss: Pq = VIN x 0.01 Total Loss: Ptot = Pcon + Psw + Pq Given TA => Estimated Junction Temperature: TJ = TA + Rth x Ptot Given TJMAX = 125°C => Estimated Maximum Ambient Temperature: TAMAX = TJMAX – Rth x Ptot Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TPS5450-EP 15 TPS5450-EP SLVS935 – JULY 2009 ....................................................................................................................................................................................................... www.ti.com PERFORMANCE GRAPHS The performance graphs (Figure 12 through Figure 18) are applicable to the circuit in Figure 11. Ta = 25 °C. unless otherwise specified. 0.3 100 0.2 VI = 12 V 95 Output Regulation - % Efficiency - % VI = 15 V 90 VI = 24 V 85 VI = 28 V 80 0.1 0 -0.1 -0.2 75 0 1 2 3 4 IO - Output Current - A 5 6 Figure 12. Efficiency vs. Output Current -0.3 0 0.5 1 1.5 2 2.5 3 3.5 IO - Output Current - A 4 4.5 5 Figure 13. Output Regulation % vs. Output Current 0.3 VI = 200 mV/Div (AC Coupled) Output Regulation - % 0.2 IO = 0 A 0.1 IO = 5 A 0 PH = 10 V/Div IO = 2.5 A -0.1 -0.2 -0.3 10 13 16 19 22 25 VI - Input Voltage - V 28 Figure 14. Output Regulation % vs. Input Voltage 16 t - Time - 1 ms/Div 31 Figure 15. Input Voltage Ripple and PH Node, Io = 5 A. Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TPS5450-EP TPS5450-EP www.ti.com ....................................................................................................................................................................................................... SLVS935 – JULY 2009 VOUT = 50 mV/div (AC Coupled, 20 MHz BWL) VOUT = 50 mV/div (AC Coupled, 20 MHz BWL) VPH = 10 V/div IOUT = 1 A/div t - Time = 1 ms/div t - Time = 100 ms/div Figure 16. Output Voltage Ripple and PH Node, Io = 5 A Figure 17. Transient Response, Io Step 1.25 to 3.75 A. TJ - Junction Temperature - °C 125 100 75 50 25 0 0.5 1 1.5 2 2.5 IC Power Dissipation - W 3 3.5 Figure 18. TPS5450 Power Dissipation vs Junction Temperature. Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TPS5450-EP 17 PACKAGE OPTION ADDENDUM www.ti.com 14-Aug-2009 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Eco Plan (2) Qty TPS5450MDDAREP ACTIVE SO Power PAD DDA 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM V62/90644-01XE ACTIVE SO Power PAD DDA 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM Lead/Ball Finish MSL Peak Temp (3) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. 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OTHER QUALIFIED VERSIONS OF TPS5450-EP : TPS5450 • Catalog: • Automotive: TPS5450-Q1 NOTE: Qualified Version Definitions: - TI's standard catalog product • Catalog • Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects Addendum-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 TAPE AND REEL INFORMATION *All dimensions are nominal Device TPS5450MDDAREP Package Package Pins Type Drawing SO Power PAD DDA 8 SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) 2500 330.0 12.4 Pack Materials-Page 1 6.4 B0 (mm) K0 (mm) P1 (mm) 5.2 2.1 8.0 W Pin1 (mm) Quadrant 12.0 Q1 PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) TPS5450MDDAREP SO PowerPAD DDA 8 2500 367.0 367.0 35.0 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46C and to discontinue any product or service per JESD48B. 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