TI TPS54332DDAR

TPS54332
www.ti.com
SLVS875B – JANUARY 2009 – REVISED FEBRUARY 2012
3.5A, 28V, 1MHz, STEP DOWN DC/DC CONVERTER WITH Eco-mode™
Check for Samples: TPS54332
FEATURES
APPLICATIONS
•
•
•
•
1
2
•
•
•
•
•
•
•
•
•
3.5V to 28V Input Voltage Range
Adjustable Output Voltage Down to 0.8V
Integrated 80 mΩ High Side MOSFET Supports
up to 3.5A Continuous Output Current
High Efficiency at Light Loads with a Pulse
Skipping Eco-mode™
Fixed 1MHz Switching Frequency
Typical 1μA Shutdown Quiescent Current
Adjustable Slow Start Limits Inrush Currents
Programmable UVLO Threshold
Overvoltage Transient Protection
Cycle by Cycle Current Limit, Frequency Fold
Back and Thermal Shutdown Protection
Available in Thermally Enhanced 8-Pin SOIC
PowerPAD™ Package
Supported by SwitcherPro™ Software Tool
(http://focus.ti.com/docs/toolsw/folders/print/s
witcherpro.html)
•
•
Consumer Applications such as Set-Top
Boxes, CPE Equipment, LCD Displays,
Peripherals, and Battery Chargers
Industrial and Car Audio Power Supplies
5V, 12V and 24V Distributed Power Systems
DESCRIPTION
The TPS54332 is a 28 V, 3.5 A non-synchronous
buck converter that integrates a low RDS(on) high side
MOSFET. To increase efficiency at light loads, a
pulse skipping Eco-mode™ feature is automatically
activated. Furthermore, the 1 μA shutdown supply
current allows the device to be used in battery
powered applications. Current mode control with
internal slope compensation simplifies the external
compensation calculations and reduces component
count while allowing the use of ceramic output
capacitors. A resistor divider programs the hysteresis
of the input under-voltage lockout. An overvoltage
transient protection circuit limits voltage overshoots
during startup and transient conditions. A cycle by
cycle current limit scheme, frequency fold back and
thermal shutdown protect the device and the load in
the event of an overload condition. The TPS54332 is
available in an 8-pin SOIC PowerPAD™ package.
SIMPLIFIED SCHEMATIC
EFFICIENCY
100
Ren1
VO = 2.5 V
EN
VIN
Ren2
95
VIN
CI
VI = 5 V
90
VI = 12 V
CBOOT
BOOT
LO
VOUT
PH
SS
COMP
D1
CO
RO1
C1
CSS
C2
R3
Efficiency - %
TPS54332
85
80
75
VI = 15 V
70
65
VSENSE
GND
60
0
RO2
0.5
1
1.5
2
2.5
3
IO - Output Current - A
3.5
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Eco-mode, PowerPAD, SwitcherPro are trademarks of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2009–2012, Texas Instruments Incorporated
TPS54332
SLVS875B – JANUARY 2009 – REVISED FEBRUARY 2012
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
DESCRIPTION CONTINUED
For additional design needs, see:
TPS54231
TPS54232
TPS54233
TPS54331
IO(Max)
2A
2A
2A
3A
TPS54332
3.5A
Input Voltage Range
3.5V - 28V
3.5V - 28V
3.5V - 28V
3.5V - 28V
3.5V - 28V
Switching Freq. (Typ)
570kHz
1000kHz
285kHz
570kHz
1000kHz
Switch Current Limit (Min)
2.3A
2.3A
2.3A
3.5A
4.2A
Pin/Package
8SOIC
8SOIC
8SOIC
8SOIC
8SO PowerPAD™
ORDERING INFORMATION (1)
TJ
PACKAGE
–40°C to 150°C
(1)
(2)
SWITCHING FREQUENCY
PART NUMBER (2)
1 MHz
TPS54332DDA
TM
8 pin SOIC PowerPAD
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
The DDA package is also available taped and reeled. Add an R suffix to the device type (i.e., TPS54332DDAR). See applications
section of data sheet for layout information.
ABSOLUTE MAXIMUM RATINGS (1)
over operating free-air temperature range (unless otherwise noted)
VALUE
Input Voltage
VIN
–0.3 to 30
EN
–0.3 to 6
BOOT
38
VSENSE
–0.3 to 3
COMP
–0.3 to 3
SS
–0.3 to 3
BOOT-PH
Output Voltage
Source Current
Sink Current
Electrostatic
Discharge
UNIT
V
8
PH
–0.6 to 30
V
PH (10 ns transient from ground to negative peak)
–5
EN
100
μA
BOOT
100
mA
VSENSE
10
μA
PH
9.25
A
VIN
9.25
A
COMP
100
SS
200
Human body model (HBM)
2
kV
500
V
Operating Junction Temperature
–40 to 150
°C
Storage Temperature
–65 to 150
°C
(1)
2
Charged device model (CDM)
μA
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
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PACKAGE DISSIPATION RATINGS (1)
(1)
(2)
(3)
(2) (3)
PACKAGE
THERMAL IMPEDANCE
JUNCTION TO AMBIENT
PSEUDO THERMAL IMPEDANCE
JUNCTION TO TOP
DDA
50°C/W
5°C/W
Maximum power dissipation may be limited by overcurrent protection
Power rating at a specific ambient temperature TA should be determined with a junction temperature of 150°C. This is the point where
distortion starts to substantially increase. Thermal management of the PCB should strive to keep the junction temperature at or below
150°C for best performance and long-term reliability. See power dissipation estimate in application section of this data sheet for more
information.
Test board conditions:
(a) 2 inches x 1.5 inches, 2 layers, thickness: 0.062 inch
(b) 2-ounce copper traces located on the top and bottom of the PCB
(c) 6 thermal vias in the PowerPAD area under the device package
RECOMMENDED OPERATING CONDITIONS
over operating free-air temperature range (unless otherwise noted)
MIN
TYP
MAX
UNIT
Operating Input Voltage on (VIN pin)
3.5
28
V
Operating junction temperature, TJ
–40
150
°C
MAX
UNIT
ELECTRICAL CHARACTERISTICS
TJ = –40°C to 150°C, VIN = 3.5V to 28V (unless otherwise noted)
DESCRIPTION
TEST CONDITIONS
MIN
TYP
SUPPLY VOLTAGE (VIN PIN)
Internal undervoltage lockout threshold
Rising and Falling
Shutdown supply current
EN = 0V, VIN = 12V, –40°C to 85°C
3.5
V
1
4
μA
Operating – non switching supply current
VSENSE = 0.85 V
82
120
μA
Enable threshold
Rising and Falling
1.25
1.35
Input current
Enable threshold – 50 mV
-1
μA
Input current
Enable threshold + 50 mV
-4
μA
ENABLE AND UVLO (EN PIN)
V
VOLTAGE REFERENCE
Voltage reference
0.772
0.8
0.828
BOOT-PH = 3 V, VIN = 3.5 V
115
200
BOOT-PH = 6 V, VIN = 12 V
80
150
V
HIGH-SIDE MOSFET
On resistance
mΩ
ERROR AMPLIFIER
Error amplifier transconductance (gm)
–2 μA < ICOMP < 2 μA, V(COMP) = 1 V
Error amplifier DC gain (1)
VSENSE = 0.8 V
800
μmhos
V/V
Error amplifier unity gain bandwidth (1)
5 pF capacitance from COMP to GND pins
2.7
MHz
Error amplifier source/sink current
V(COMP) = 1.0 V, 100 mV overdrive
±7
μA
Switch current to COMP transconductance
VIN = 12 V
12
A/V
92
SWITCHING FREQUENCY
TPS54332 Switching Frequency
VIN = 12V, 25°C
Minimum controllable on time
VIN = 12V, 25°C
Maximum controllable duty ratio (1)
BOOT-PH = 6 V
800
90
1000
1200
kHz
110
135
ns
93
%
160
mA
6.5
A
PULSE SKIPPING Eco-mode™
Pulse skipping Eco-mode™ switch current threshold
CURRENT LIMIT
Current limit threshold
(1)
VIN = 12 V
4.2
Specified by design
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ELECTRICAL CHARACTERISTICS (continued)
TJ = –40°C to 150°C, VIN = 3.5V to 28V (unless otherwise noted)
DESCRIPTION
TEST CONDITIONS
MIN
TYP
MAX
UNIT
THERMAL SHUTDOWN
Thermal Shutdown
165
°C
SLOW START (SS PIN)
Charge current
V(SS) = 0.4 V
2
μA
SS to VSENSE matching
V(SS) = 0.4 V
10
mV
DEVICE INFORMATION
PIN ASSIGNMENTS
DDA PACKAGE
(TOP VIEW)
8
PH
7
GND
3
6
COMP
4
5
VSENSE
BOOT
1
VIN
2
EN
SS
PowerPAD
(Pin 9)
TERMINAL FUNCTIONS
TERMINAL
DESCRIPTION
NAME
NO.
BOOT
1
A 0.1 μF bootstrap capacitor is required between BOOT and PH. If the voltage on this capacitor falls below the
minimum requirement, the high-side MOSFET is forced to switch off until the capacitor is refreshed.
VIN
2
Input supply voltage, 3.5 V to 28 V.
EN
3
Enable pin. Pull below 1.25V to disable. Float to enable. Programming the input undervoltage lockout with two
resistors is recommended.
SS
4
Slow start pin. An external capacitor connected to this pin sets the output rise time.
VSENSE
5
Inverting node of the gm error amplifier.
COMP
6
Error amplifier output, and input to the PWM comparator. Connect frequency compensation components to this pin.
GND
7
Ground.
PH
8
The source of the internal high-side power MOSFET.
PowerPAD
9
GND pin must be connected to the exposed pad for proper operation.
4
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FUNCTIONAL BLOCK DIAGRAM
EN
VIN
165 C
Thermal
Shutdown
1 mA
3 mA
Shutdown
Shutdown
Logic
1.25 V
Enable
Threshold
Enable
Comparator
Boot
Charge
™
ECO-MODE
Minimum Clamp
Boot
UVLO
BOOT
2.1V
Error
Amplifier
VSENSE
2 mA
PWM
Comparator
Gate
Drive
Logic
gm = 92 mA/V
DC gain = 800 V/V
BW = 2.7 MHz
Voltage
Reference
SS
2 kW
0.8 V
S
Shutdown
PWM
Latch
12 A/V
Current
Sense
R
80 mW
Q
S
Slope
Compensation
PH
Discharge
Logic
VSENSE
Frequency
Shift
Oscillator
GND
COMP
Maximum
Clamp
TYPICAL CHARACTERISTICS
CHARACTERIZATION CURVES
ON RESISTANCE
vs
JUNCTION TEMPERATURE
SHUTDOWN QUIESCENT CURRENT
vs
INPUT VOLTAGE
8
120
1020
VIN = 12 V
VIN = 12 V
EN = 0 V
110
100
90
80
fsw - Oscillator Frequency - kHz
TJ = 150°C
Isd - Shutdown Current - mA
Rdson - On Resistance - mW
SWITCHING FREQUENCY
vs
JUNCTION TEMPERATURE
6
TJ = -40°C
4
2
TJ = 25°C
1010
1000
990
70
60
-50
-25
0
25
50
75
100
125
150
980
-50
0
3
TJ - Junction Temperature - °C
Figure 1.
8
18
13
VI - Input Voltage - V
23
Figure 2.
28
-25
0
25
50
75
100
TJ - Junction Temperature - °C
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150
Figure 3.
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TYPICAL CHARACTERISTICS (continued)
MINIMUM CONTROLLABLE ON
TIME
vs
JUNCTION TEMPERATURE
VOLTAGE REFERENCE
vs
JUNCTION TEMPERATURE
0.824
0.812
0.806
0.8
0.794
0.788
0.782
-25
0
25
50
75
100
125
150
Dmin - Minimum Controllable Duty Ratio - %
Tonmin - Minimum Controllable On Time - ns
Vref - Voltage Reference - V
14
140
VIN = 12 V
0.818
0.776
-50
MINIMUM CONTROLLABLE DUTY
RATIO
vs
JUNCTION TEMPERATURE
VIN = 12 V
130
120
110
100
90
-50
-25
TJ - Junction Temperature - °C
0
25
50
75
100
TJ - Junction Temperature - °C
Figure 4.
125
VIN = 12 V
13.5
13
12.5
12
11.5
11
10.5
10
9.5
9
-50
150
-25
0
25
50
75
100
TJ - Junction Temperature - °C
Figure 5.
125
150
Figure 6.
SS CHARGE CURRENT
vs
JUNCTION TEMPERATURE
CURRENT LIMIT THRESHOLD
vs
INPUT VOLTAGE
7
2.1
TJ = 25°C
VIN = 12 V
6.5
Current Limit Threshold - A
ISS - SS Charge Current - mA
TJ = 150°C
2.05
2
1.95
6
5.5
TJ = -40°C
5
4.5
4
3.5
1.9
-50
3
-25
0
25
50
75
100
TJ - Junction Temperature - °C
125
3
150
8
Figure 7.
13
18
VI - Input Voltage - V
23
28
Figure 8.
SUPPLEMENTAL APPLICATION CURVES
TYPICAL MAXIMUM OUTPUT VOLTAGE
vs
INPUT VOLTAGE
3.75
30
3.25
25
VO - Output Voltage - V
VO - Output Voltage - V
TYPICAL MINIMUM OUTPUT VOLTAGE
vs
INPUT VOLTAGE
2.75
IO = 3.5 A
2.25
1.75
20
IO = 3.5 A
15
10
5
1.25
0
0.75
3
8
18
13
VI - Input Voltage - V
23
28
3
Figure 9.
6
8
13
18
VI - Input Voltage - V
23
28
Figure 10.
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TYPICAL CHARACTERISTICS (continued)
OVERVIEW
The TPS54332 is a 28 V, 3.5 A, step-down (buck) converter with an integrated high-side n-channel MOSFET. To
improve performance during line and load transients, the device implements a constant frequency, current mode
control which reduces output capacitance and simplifies external frequency compensation design. The
TPS54332 has a pre-set switching frequency of 1MHz.
The TPS54332 needs a minimum input voltage of 3.5V to operate normally. The EN pin has an internal pull-up
current source that can be used to adjust the input voltage under-voltage lockout (UVLO) with two external
resistors. In addition, the pull-up current provides a default condition when the EN pin is floating for the device to
operate. The operating current is 82 μA typically when not switching and under no load. When the device is
disabled, the supply current is 1 μA typically.
The integrated 80 mΩ high-side MOSFET allows for high efficiency power supply designs with continuous output
currents up to 3.5 A.
The TPS54332 reduces the external component count by integrating the boot recharge diode. The bias voltage
for the integrated high-side MOSFET is supplied by an external capacitor on the BOOT to PH pin. The boot
capacitor voltage is monitored by an UVLO circuit and will turn the high-side MOSFET off when the voltage falls
below a preset threshold of 2.1 V typically. The output voltage can be stepped down to as low as the reference
voltage.
By adding an external capacitor, the slow start time of the TPS54332 can be adjustable which enables flexible
output filter selection.
To improve the efficiency at light load conditions, the TPS54332 enters a special pulse skipping Eco-modeTM
when the peak inductor current drops below 160mA typically.
The frequency foldback reduces the switching frequency during startup and over current conditions to help
control the inductor current. The thermal shut down gives the additional protection under fault conditions.
DETAILED DESCRIPTION
FIXED FREQUENCY PWM CONTROL
The TPS54332 uses a fixed frequency, peak current mode control. The internal switching frequency of the
TPS54332 is fixed at 1 MHz.
Eco-modeTM
The TPS54332 is designed to operate in pulse skipping Eco-modeTM at light load currents to boost light load
efficiency. When the peak inductor current is lower than 160 mA typically, the COMP pin voltage falls to 0.5V
typically and the device enters Eco-modeTM . When the device is in Eco-modeTM, the COMP pin voltage is
clamped at 0.5V internally which prevents the high side integrated MOSFET from switching. The peak inductor
current must rise above 160mA for the COMP pin voltage to rise above 0.5V and exit Eco-modeTM. Since the
integrated current comparator catches the peak inductor current only, the average load current entering EcomodeTM varies with the applications and external output filters.
VOLTAGE REFERENCE (Vref)
The voltage reference system produces a ±2% initial accuracy voltage reference (±3.5% over temperature) by
scaling the output of a temperature stable bandgap circuit. The typical voltage reference is designed at 0.8V.
BOOTSTRAP VOLTAGE (BOOT)
The TPS54332 has an integrated boot regulator and requires a 0.1 μF ceramic capacitor between the BOOT and
PH pin to provide the gate drive voltage for the high-side MOSFET. A ceramic capacitor with an X7R or X5R
grade dielectric is recommended because of the stable characteristics over temperature and voltage. To improve
drop out, the TPS54332 is designed to operate at 100% duty cycle as long as the BOOT to PH pin voltage is
greater than 2.1V typically.
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ENABLE AND ADJUSTABLE INPUT UNDER-VOLTAGE LOCKOUT (VIN UVLO)
The EN pin has an internal pull-up current source that provides the default condition of the TPS54332 operating
when the EN pin floats.
The TPS54332 is disabled when the VIN pin voltage falls below internal VIN UVLO threshold. It is recommended
to use an external VIN UVLO to add Hysteresis unless VIN is greater than (VOUT + 2 V). To adjust the VIN UVLO
with Hysteresis, use the external circuitry connected to the EN pin as shown in Figure 11. Once the EN pin
voltage exceeds 1.25 V, an additional 3 μA of hysteresis is added. Use Equation 1 and Equation 2 to calculate
the resistor values needed for the desired VIN UVLO threshold voltages. The VSTART is the input start threshold
voltage, the VSTOP is the input stop threshold voltage and the VEN is the enable threshold voltage of 1.25 V. The
VSTOP should always be greater than 3.5 V.
TPS54332
VIN
Ren1
1 mA
3 mA
+
EN
Ren2
1.25 V
-
Figure 11. Adjustable Input Undervoltage Lockout
Ren1 =
Ren2 =
VSTART - VSTOP
3 mA
(1)
VEN
VSTART - VEN
+ 1 mA
Ren1
(2)
PROGRAMMABLE SLOW START USING SS PIN
It is highly recommended to program the slow start time externally because no slow start time is implemented
internally. The TPS54332 effectively uses the lower voltage of the internal voltage reference or the SS pin
voltage as the power supply’s reference voltage fed into the error amplifier and will regulate the output
accordingly. A capacitor (CSS) on the SS pin to ground implements a slow start time. The TPS54332 has an
internal pull-up current source of 2 μA that charges the external slow start capacitor. The equation for the slow
start time (10% to 90%) is shown in Equation 3 . The Vref is 0.8V and the ISS current is 2 μA.
CSS (nF ) ´ Vref (V )
TSS (ms ) =
ISS (mA )
(3)
The slow start time should be set between 1ms to 10ms to ensure good start-up behavior. The slow start
capacitor should be no more than 27nF.
If during normal operation, the input voltage drops below the VIN UVLO threshold, or the EN pin is pulled below
1.25V, or a thermal shutdown event occurs, the TPS54332 stops switching.
ERROR AMPLIFIER
The TPS54332 has a transconductance amplifier for the error amplifier. The error amplifier compares the
VSENSE voltage to the internal effective voltage reference presented at the input of the error amplifier. The
transconductance of the error amplifier is 92 μA/V during normal operation. Frequency compensation
components are connected between the COMP pin and ground.
SLOPE COMPENSATION
In order to prevent the sub-harmonic oscillations when operating the device at duty cycles greater than 50%, the
TPS54332 adds a built-in slope compensation which is a compensating ramp to the switch current signal.
8
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CURRENT MODE COMPENSATION DESIGN
To simplify design efforts using the TPS54332, the typical designs for common applications are listed in Table 1.
For designs using ceramic output capacitors, proper derating of ceramic output capacitance is recommended
when doing the stability analysis. This is because the actual ceramic capacitance drops considerably from the
nominal value when the applied voltage increases. Advanced users may refer to the Step by Step Design
Procedure in the Application Information section for the detailed guidelines or use SwitcherPro™ Software tool
(http://focus.ti.com/docs/toolsw/folders/print/switcherpro.html).
Table 1. Typical Designs (Referring to Simplified Schematic on page 1)
VIN
(V)
VOUT
(V)
Fsw
(kHz)
Lo
(μH)
Co
RO1
(kΩ)
RO2
(kΩ)
C2
(pF)
12
5
1000
12
3.3
1000
12
5
12
3.3
C1
(pF)
R3
(kΩ)
3.3
Ceramic 22μF
10
1.91
2.7
Ceramic 22μF x 2
10
3.24
18
470
24.9
18
1800
1000
3.3
Aluminum 330μF/160mohm
10
39.2
1.91
22
47
1000
2.7
Aluminum 330μF/160mohm
10
10
3.24
39
100
29.4
OVERCURRENT PROTECTION AND FREQUENCY SHIFT
The TPS54332 implements current mode control that uses the COMP pin voltage to turn off the high-side
MOSFET on a cycle by cycle basis. Every cycle the switch current and the COMP pin voltage are compared;
when the peak inductor current intersects the COMP pin voltage, the high-side switch is turned off. During
overcurrent conditions that pull the output voltage low, the error amplifier responds by driving the COMP pin high,
causing the switch current to increase. The COMP pin has a maximum clamp internally, which limit the output
current.
The TPS54332 provides robust protection during short circuits. There is potential for overcurrent runaway in the
output inductor during a short circuit at the output. The TPS54332 solves this issue by increasing the off time
during short circuit conditions by lowering the switching frequency. The switching frequency is divided by 8, 4, 2,
and 1 as the voltage ramps from 0 V to 0.8 V on VSENSE pin. The relationship between the switching frequency
and the VSENSE pin voltage is shown in Table 2.
Table 2. Switching Frequency Conditions
SWITCHING FREQUENCY
VSENSE PIN VOLTAGE
1 MHz
VSENSE ≥ 0.6 V
1 MHz / 2
0.6 V > VSENSE ≥ 0.4 V
1 MHz / 4
0.4 V > VSENSE ≥ 0.2 V
1 MHz / 8
0.2 V > VSENSE
OVERVOLTAGE TRANSIENT PROTECTION
The TPS54332 incorporates an overvoltage transient protection (OVTP) circuit to minimize output voltage
overshoot when recovering from output fault conditions or strong unload transients. The OVTP circuit includes an
overvoltage comparator to compare the VSENSE pin voltage and internal thresholds. When the VSENSE pin
voltage goes above 109% × Vref, the high-side MOSFET will be forced off. When the VSENSE pin voltage falls
below 107% × Vref, the high-side MOSFET will be enabled again.
THERMAL SHUTDOWN
The device implements an internal thermal shutdown to protect itself if the junction temperature exceeds 165°C.
The thermal shutdown forces the device to stop switching when the junction temperature exceeds the thermal
trip threshold. Once the die temperature decreases below 165°C, the device reinitiates the power up sequence.
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APPLICATION INFORMATION
Figure 12. Typical Application Schematic
STEP BY STEP DESIGN PROCEDURE
The following design procedure can be used to select component values for the TPS54332. Alternately, the
SwitcherPro™Software may be used to generate a complete design. The SwitcherPro™ Software uses an
iterative design procedure and accesses a comprehensive database of components when generating a design.
This section presents a simplified discussion of the design process.
To
•
•
•
•
•
•
begin the design process a few parameters must be decided upon. The designer needs to know the following:
Input voltage range
Output voltage
Input ripple voltage
Output ripple voltage
Output current rating
Operating frequency
For this design example, use the following as the input parameters
Table 3. Design Parameters
DESIGN PARAMETER
EXAMPLE VALUE
Input voltage range
5 V to 15 V
Output voltage
2.5 V
Input ripple voltage
200 mV
Output ripple voltage
20 mV
Output current rating
3.5 A
Operating Frequency
1 MHz
SWITCHING FREQUENCY
The switching frequency for the TPS54332 is fixed at 1 MHz.
10
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OUTPUT VOLTAGE SET POINT
The output voltage of the TPS54332 is externally adjustable using a resistor divider network. In the application
circuit of Figure 12, this divider network is comprised of R5 and R6. The relationship of the output voltage to the
resistor divider is given by Equation 4 and Equation 5:
R5 ´ VREF
R6 =
VOUT - VREF
(4)
é R5 ù
VOUT = VREF ´ ê
+1ú
ë R6 û
(5)
Choose R5 to be approximately 10 kΩ. Slightly increasing or decreasing R5 can result in closer output voltage
matching when using standard value resistors. In this design, R4 = 10.2 kΩ and R = 4.75 kΩ, resulting in a 2.5 V
output voltage.
INPUT CAPACITORS
The TPS54332 requires an input decoupling capacitor and depending on the application, a bulk input capacitor.
The typical recommended value for the decoupling capacitor is 10 μF. A high-quality ceramic type X5R or X7R is
recommended. The voltage rating should be greater than the maximum input voltage. A smaller value may be
used as long as all other requirements are met; however 10 μF has been shown to work well in a wide variety of
circuits. Additionally, some bulk capacitance may be needed, especially if the TPS54332 circuit is not located
within about 2 inches from the input voltage source. The value for this capacitor is not critical but should be rated
to handle the maximum input voltage including ripple voltage, and should filter the output so that input ripple
voltage is acceptable. For this design a single 10 μF capacitor is used for the input decoupling capacitor. It is
X5R dielectric rated for 25 V. The equivalent series resistance (ESR) is approximately 3 mΩ, and the current
rating is 3 A.
This input ripple voltage can be approximated by Equation 6
IOUT(MAX) ´ 0.25
DVIN =
+ IOUT(MAX) ´ ESRMAX
CBULK ´ fSW
(
)
(6)
Where IOUT(MAX) is the maximum load current, fSW is the switching frequency (derated by a factor of 0.8), CBULK is
the bulk capacitor value and ESRMAX is the maximum series resistance of the bulk capacitor.
The maximum RMS ripple current also needs to be checked. For worst case conditions, this can be
approximated by Equation 7
IOUT(MAX)
ICIN =
2
(7)
In this case, the input ripple voltage would be 98 mV and the RMS ripple current would be 1.75 A. It is also
important to note that the actual input voltage ripple will be greatly affected by parasitic associated with the layout
and the output impedance of the voltage source. The actual input voltage ripple for this circuit is shown in Design
Parameters and is larger than the calculated value. This measured value is still below the specified input limit of
200 mV. The maximum voltage across the input capacitors would be VIN max plus ΔVIN/2. The chosen bypass
capacitor is rated for 25 V and the ripple current capacity is greater than 3 A, providing ample margin. It is
important that the maximum ratings for voltage and current are not exceeded under any circumstance.
OUTPUT FILTER COMPONENTS
Two components need to be selected for the output filter, the output inductor L1 and the output capacitance.
Since the TPS54332 is an externally compensated device, a wide range of filter component types and values can
be supported.
Inductor Selection
To calculate the minimum value of the output inductor, use Equation 8
LMIN =
VOUT(MAX) ´
(VIN(MAX) - VOUT )
VIN(MAX) ´ KIND ´ IOUT ´ FSW ´ 0.8
(8)
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KIND is a coefficient that represents the amount of inductor ripple current relative to the maximum output current.
In general, this value is at the discretion of the designer; however, the following guidelines may be used. For
designs using low ESR output capacitors such as ceramics, a value as high as KIND = 0.4 may be used. When
using higher ESR output capacitors, KIND = 0.2 yields better results.
For this design example, use KIND = 0.3 and the minimum inductor value is calculated to be 2.48 μH. For this
design, a l 2.5 μH inductor is chosen.
For the output filter inductor, it is important that the RMS current and saturation current ratings not be exceeded.
The RMS inductor current can be found from Equation 9
IL(RMS) =
2
IOUT(MAX)
(
)
æ VOUT ´ VIN(MAX) - VOUT ö
1
÷
+
´ ç
ç VIN(MAX) ´ LOUT ´ FSW ´ 0.8 ÷
12
è
ø
2
(9)
and the peak inductor current can be determined with Equation 10
IL(PK) = IOUT(MAX) +
VOUT ´
(VIN(MAX)
- VOUT
)
1.6 ´ VIN(MAX) ´ LOUT ´ FSW
(10)
For this design, the RMS inductor current is 3.51 A and the peak inductor current is 4.15 A. The chosen inductor
is a Coilcraft MSS1038-252NX_ 2.5 μH. It has a saturation current rating of 7.62 A and an RMS current rating of
6.55 A, meeting these requirements. Smaller or larger inductor values can be used depending on the amount of
ripple current the designer wishes to allow so long as the other design requirements are met. Larger value
inductors will have lower ac current and result in lower output voltage ripple, while smaller inductor values will
increase ac current and output voltage ripple. In general, inductor values for use with the TPS54332 are in the
range of 1 μH to 47μH.
Capacitor Selection
The important design factors for the output capacitor are dc voltage rating, ripple current rating, and equivalent
series resistance (ESR). The dc voltage and ripple current ratings cannot be exceeded. The ESR is important
because along with the inductor current it determines the amount of output ripple voltage. The actual value of the
output capacitor is not critical, but some practical limits do exist. Consider the relationship between the desired
closed loop crossover frequency of the design and LC corner frequency of the output filter. In general, it is
desirable to keep the closed loop crossover frequency at less than 1/5 of the switching frequency. With high
switching frequencies such as the 1 MHz frequency of this design, internal circuit limitations of the TPS54332
limit the practical maximum crossover frequency to about 75 kHz. In general, the closed loop crossover
frequency should be higher than the corner frequency determined by the load impedance and the output
capacitor. This limits the minimum capacitor value for the output filter to:
CO _ min = 1 /(2 ´ p ´ RO ´ FCO _ max )
(11)
Where RO is the output load impedance (VO/IO) and fCO is the desired crossover frequency. For a desired
maximum crossover of 75 kHz the minimum value for the output capacitor is around 3.2 μF. This may not satisfy
the output ripple voltage requirement. The output ripple voltage consists of two components; the voltage change
due to the charge and discharge of the output filter capacitance and the voltage change due to the ripple current
times the ESR of the output filter capacitor. The output ripple voltage can be estimated by:
é ( D - 0 .5 )
ù
+ R ESR ú
V O PP = I LPP ê
ë 4 ´ F SW ´ C O
û
(12)
Where CO is the total effective output capacitance.
The maximum ESR of the output capacitor can be determined from the amount of allowable output ripple as
specified in the initial design parameters. The contribution to the output ripple voltage due to ESR is the inductor
ripple current times the ESR of the output filter, so the maximum specified ESR as listed in the capacitor data
sheet is given by Equation 13
12
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ESRmax =
SLVS875B – JANUARY 2009 – REVISED FEBRUARY 2012
VOPPMAX
ILPP
-
(D
- 0.5 )
4 ´ FSW ´ CO
(13)
Where VOPPMAX is the desired maximum peak-to-peak output ripple. The maximum RMS ripple current in the
output capacitor is given by Equation 14.
æ VOUT × VIN(MAX) - VOUT ö
1
÷
ICOUT(RMS) =
× ç
ç VIN(MAX) × LOUT × FSW × NC ÷
12
è
ø
(14)
(
)
The minimum switching frequency should be used in the above equations (derated by a factor of 0.8). For this
design example, two 47-μF ceramic output capacitors are chosen for C2 and C3. These are rated at 10 V with a
maximum ESR of 3 mΩ and a ripple current rating in excess of 3 A. The calculated total RMS ripple current is
300 mA ( 150 mA each) and the total ESR required is 20 mΩ or less. These output capacitors exceed the
requirements by a wide margin and will result in a reliable, high-performance design. it is important to note that
the actual capacitance in circuit may be less than the catalog value when the output is operating at the desired
output of 2.5 V. 10 V rated capacitors are used to minimize the this reduction in capacitance due to dc voltage on
the output. The selected output capacitor must be rated for a voltage greater than the desired output voltage plus
½ the ripple voltage. Any derating amount must also be included. Other capacitor types work well with the
TPS54332, depending on the needs of the application.
COMPENSATION COMPONENTS
The external compensation used with the TPS54332 allows for a wide range of output filter configurations. A
large range of capacitor values and types of dielectric are supported. The design example uses ceramic X5R
dielectric output capacitors, but other types are supported.
A Type II compensation scheme is recommended for the TPS54332. The compensation components are chosen
to set the desired closed loop cross over frequency and phase margin for output filter components. The type II
compensation has the following characteristics; a dc gain component, a low frequency pole, and a mid frequency
zero / pole pair.
The dc gain is determined by Equation 15:
Vggm ´ VREF
GDC =
VO
(15)
Where:
Vggm = 800
VREF = 0.8 V
The low-frequency pole is determined by Equation 16:
FPO = 1/ (2 ´ p ´ ROO ´ CZ )
(16)
ROA = 8.696 MΩ.
The mid-frequency zero is determined by Equation 17:
FZ1 = 1/ (2 ´ p ´ R Z ´ CZ )
(17)
And, the mid-frequency pole is given by Equation 18:
FP1 = 1/ (2 ´ p ´ R Z ´ CP )
(18)
The first step is to choose the closed loop crossover frequency. The closed-loop crossover frequency should be
less than 1/8 of the minimum operating frequency, but for the TPS54332 it is recommended that the maximum
closed loop crossover frequency be not greater than 75 kHz. Next, the required gain and phase boost of the
crossover network needs to be calculated. By definition, the gain of the compensation network must be the
inverse of the gain of the modulator and output filter. For this design example, where the ESR zero is much
higher than the closed loop crossover frequency, the gain of the modulator and output filter can be approximated
by Equation 19:
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Gain = - 20 log (2 ´ p ´ RSENSE ´ FCO ´ CO )
(19)
Where:
RSENSE = 1Ω/12
FCO = Closed-loop crossover frequency
CO = Output capacitance
The phase loss is given by Equation 20:
PL = a tan (2 ´ p ´ FCO ´ RESR ´ CO ) - a tan (2 ´ p ´ FCO ´ RO ´ CO ) - 10dB
(20)
Where:
RESR = Equivalent series resistance of the output capacitor
RO = VO/IO
The measured overall loop response for the circuit is given in Figure 20. Note that the actual closed loop
crossover frequency is higher than intended at about 25 kHz. This is primarily due to variation in the actual
values of the output filter components and tolerance variation of the internal feed-forward gain circuitry. Overall
the design has greater than 60 degrees of phase margin and will be completely stable over all combinations of
line and load variability.
Now that the phase loss is known the required amount of phase boost to meet the phase margin requirement
can be determined. The required phase boost is given by Equation 21:
PB = (PM - 90 deg ) - PL
(21)
Where PM = the desired phase margin.
A zero / pole pair of the compensation network will be placed symmetrically around the intended closed loop
frequency to provide maximum phase boost at the crossover point. The amount of separation can be determined
by Equation 22 and the resultant zero and pole frequencies are given by Equation 23 and Equation 24
ö
æ PB
k = tanç
+ 45 deg ÷
ø
è 2
FZ 1 =
(22)
FCO
k
(23)
FP1 = FCO ´ k
(24)
The low-frequency pole is set so that the gain at the crossover frequency is equal to the inverse of the gain of the
modulator and output filter. Due to the relationships established by the pole and zero relationships, the value of
RZ can be derived directly by Equation 25 :
2 × p × FCO × VO × CO × ROA
RZ =
GMICOMP × Vggm × VREF
(25)
Where:
VO = Output voltage
CO = Output capacitance
FCO = Desired crossover frequency
ROA = 8.696 MΩ
GMCOMP = 12 A/V
Vggm = 800
VREF = 0.8 V
With RZ known, CZ and CP can be calculated using Equation 26 and Equation 27:
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CZ =
CP =
SLVS875B – JANUARY 2009 – REVISED FEBRUARY 2012
1
2 ´ p ´ FZ 1 ´ Rz
(26)
1
2 ´ p ´ FP1 ´ Rz
(27)
For this design, the two 47 μF output capacitors are used. For ceramic capacitors, the actual output capacitance
is less than the rated value when the capacitors have a dc bias voltage applied. This is the case in a dc/dc
converter. The actual output capacitance may be as low as 54 μF. The combined ESR is approximately .001 Ω.
Using Equation 19 and Equation 20, the output stage gain and phase loss are equivalent as:
Gain = –6.94 dB
and
PL - –93.94 degrees
For 70 degrees of phase margin, Equation 21 requires 63.64 degrees of phase boost.
Equation 22, Equation 23, and Equation 24 are used to find the zero and pole frequencies of:
FZ1 = 11.57 kHz
And
FP1 = 216 kHz
RZ, CZ, and CP are calculated using Equation 25, Equation 26, and Equation 27:
Rz =
Cz =
Cp =
2 ´ p ´ 50000 ´ 2.5 ´ 82 ´ 10-6 ´ 8.696 ´ 106
= 72.92 kW
12 ´ 800 ´ 0.8
(28)
1
= 183 pF
2 ´ p ´ 11570 ´ 75000
(29)
1
= 9.8 pF
2 ´ p ´ 216000 ´ 75000
(30)
Using standard values for R3, C6, and C7 in the application schematic of Figure 12:
R3 = 75 kΩ
C6 = 180 pF
C7 = 10 pF
BOOTSTRAP CAPACITOR
Every TPS54332 design requires a bootstrap capacitor, C4. The bootstrap capacitor must be 0.1 μF. The
bootstrap capacitor is located between the PH pins and BOOT pin. The bootstrap capacitor should be a highquality ceramic type with X7R or X5R grade dielectric for temperature stability.
CATCH DIODE
The TPS54332 is designed to operate using an external catch diode between PH and GND. The selected diode
must meet the absolute maximum ratings for the application: Reverse voltage must be higher than the maximum
voltage at the PH pin, which is VINMAX + 0.5 V. Peak current must be greater than IOUTMAX plus on half the
peak to peak inductor current. Forward voltage drop should be small for higher efficiencies. It is important to note
that the catch diode conduction time is typically longer than the high-side FET on time, so attention paid to diode
parameters can make a marked improvement in overall efficiency. Additionally, check that the device chosen is
capable of dissipating the power losses. For this design, a Diodes, Inc. B340A is chosen, with a reverse voltage
of 40 V, forward current of 3 A, and a forward voltage drop of 0.5 V.
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OUTPUT VOLTAGE LIMITATIONS
Due to the internal design of the TPS54332, there are both upper and lower output voltage limits for any given
input voltage. The upper limit of the output voltage set point is constrained by the maximum duty cycle of 91%
and is given by Equation 31:
VOmax = 0.91 ×
((V
IN min
)
- IO max × RDS(on) max + VD
)-
(IO max
× RL ) - VD
(31)
Where:
VIN min = Minimum input voltage
IO max = Maximum load current
VD = Catch diode forward voltage
RL = Output inductor series resistance
The equation assumes maximum on resistance for the internal high-side FET.
The lower limit is constrained by the minimum controllable on time which may be as high as 130 ns. The
approximate minimum output voltage for a given input voltage and minimum load current is given by Equation 32:
VOmin = 0.118 ´
((VIN max -
IOmin ´ Rin ) + VD ) - (IO min ´ RL ) - VD
(32)
Where:
VIN max = Maximum input voltage
IO min = Minimum load current
VD = Catch diode forward voltage
RL = Output inductor series resistance
This equation assumes nominal on-resistance for the high-side FET and accounts for worst case variation of
operating frequency set point. Any design operating near the operational limits of the device should be carefully
checked to assure proper functionality.
POWER DISSIPATION ESTIMATE
The following formulas show how to estimate the device power dissipation under continuous conduction mode
operations. They should not be used if the device is working in the discontinuous conduction mode (DCM) or
pulse skipping Eco-modeTM.
The device power dissipation includes:
1) Conduction loss: Pcon = Iout2 x RDS(on) x VOUT/VIN
2) Switching loss: Psw = 0.55 x 10-9 x VIN2 x IOUT x Fsw
3) Gate charge loss: Pgc = 22.8 x 10-9 x Fsw
4) Quiescent current loss: Pq = 0.082 x 10-3 x VIN
Where:
IOUT is the output current (A).
RDS(on) is the on-resistance of the high-side MOSFET (Ω).
VOUT is the output voltage (V).
VIN is the input voltage (V).
Fsw is the switching frequency (Hz).
So
Ptot = Pcon + Psw + Pgc + Pq
For given TA , TJ = TA + Rth x Ptot.
For given TJMAX = 150°C, TAMAX = TJMAX– Rth x Ptot.
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Where:
Ptot is the total device power dissipation (W).
TA is the ambient temperature (°C).
TJ is the junction temperature (°C) .
Rth is the thermal resistance of the package (°C/W).
TJMAX is maximum junction temperature (°C).
TAMAX is maximum ambient temperature (°C).
PCB LAYOUT
The VIN pin should be bypassed to ground with a low ESR ceramic bypass capacitor. Care should be taken to
minimize the loop area formed by the bypass capacitor connections, the VIN pin, and the anode of the catch
diode. The typical recommended bypass capacitance is 10-μF ceramic with a X5R or X7R dielectric and the
optimum placement is closest to the VIN pins and the source of the anode of the catch diode. See Figure 13 for
a PCB layout example. The GND D pin should be tied to the PCB ground plane at the pin of the IC. The source
of the low-side MOSFET should be connected directly to the top side PCB ground area used to tie together the
ground sides of the input and output capacitors as well as the anode of the catch diode. The PH pin should be
routed to the cathode of the catch diode and to the output inductor. Since the PH connection is the switching
node, the catch diode and output inductor should be located very close to the PH pins, and the area of the PCB
conductor minimized to prevent excessive capacitive coupling. For operation at full rated load, the top side
ground area must provide adequate heat dissipating area. The TPS54332 uses a fused lead frame so that the
GND pin acts as a conductive path for heat dissipation from the die. Many applications have larger areas of
internal or back side ground plane available, and the top side ground area can be connected to these areas
using multiple vias under or adjacent to the device to help dissipate heat. The additional external components
can be placed approximately as shown. It may be possible to obtain acceptable performance with alternate
layout schemes, however this layout has been shown to produce good results and is intended as a guideline.
OUTPUT
FILTER
CAPACITOR
TOPSIDE
GROUND
AREA
Route BOOT CAPACITOR
trace on other layer to provide
Wide path for top side ground
Vout
Feedback Trace
OUTPUT
INDUCTOR
CATCH
DIODE
PH
INPUT
BYPASS
CAPACITOR
BOOT
Vin
UVLO
RESISTOR
DIVIDER
VIN
GND
EN
COMP
SS
VSENSE
SLOW START
CAPACITOR
BOOT
CAPACITOR
PH
COMPENSATION
NETWORK
RESISTOR
DIVIDER
Exposed PowerPAD area
Thermal VIA
Signal VIA
Figure 13. TPS54332 Board Layout
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Estimated Circuit Area
The estimated printed circuit board area for the components used in the design of Figure 12 is 0.58 in2. This area
does not include test points or connectors.
ELECTROMAGNETIC INTERFERENCE (EMI) CONSIDERATIONS
As EMI becomes a rising concern in more and more applications, the internal design of the TPS54332 takes
measures to reduce the EMI. The high-side MOSFET gate drive is designed to reduce the PH pin voltage
ringing. The internal IC rails are isolated to decrease the noise sensitivity. A package bond wire scheme is used
to lower the parasitics effects.
To achieve the best EMI performance, external component selection and board layout are equally important.
Follow the Step by Step Design Procedure above to prevent potential EMI issues.
APPLICATION CURVES
100
100
VO = 2.5 V
VO = 2.5 V
95
95
VI = 5 V
VI = 5 V
90
90
85
Efficiency - %
Efficiency - %
VI = 12 V
85
80
75
VI = 15 V
VI = 15 V
VI = 12 V
80
75
70
65
70
60
65
55
60
0
50
0.5
1
1.5
2
2.5
IO - Output Current - A
3
0
3.5
Figure 14. TPS54332 Efficiency
1
0.2
0.225 0.25
0.025
0.02
0.8
0.015
VI = 15 V
0.7
Output Regulation - %
Output Voltage Regulation - %
0.05 0.075 0.1 0.125 0.15 0.175
IO - Output Current - A
Figure 15. TPS54332 Low Current Efficiency
0.9
0.6
VI = 12 V
0.5
0.4
VI = 5 V
0.3
0.2
0.01
0.005
IO = 1 A
0
-0.005
-0.01
-0.015
0.1
0
-0.02
-0.1
0
0.5
1
1.5
2
2.5
IO - Output Current - A
3
Figure 16. TPS54332 Load Regulation
18
0.025
3.5
-0.025
5
6
7
8
9
10
11
VI - Input Voltage - V
12
13
14
15
Figure 17. TPS54332 Line Regulation
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60
180
50
150
40
10mV/div
30
IOUT
Gain - dB
VOUT
.75 to 2.5 A Step
t - Time - 500 ms/div
VOUT
PH
90
Phase
20
60
10
30
0
0
-10
-30
-20
-60
-30
-90
-40
-120
-50
-150
-60
10
Figure 18. TPS54332 Transient Response
120
Gain
100
1k
10k
f - Frequency - Hz
100k
Phase - deg
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-180
1M
Figure 19. TPS54332 Loop Response
VIN
100 mV/div
PH
5 V/div
20 mV/div
5 V/div
t - Time - 1 ms/div
t - Time - 1 ms/div
Figure 20. TPS54332 Output Ripple
Figure 21. TPS54332 Input Ripple
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TPS54332
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VOUT
1 V/div
VIN
5 V/div
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VOUT
PH
20 mV/div
5 V/div
t - Time - 2 ms/div
t - Time - 2 ms/div
Figure 22. TPS54332 Start Up
Figure 23. TPS54332 Output Ripple During Ecomode™ Operation
SPACER
REVISION HISTORY
Changes from Original (January 2009) to Revision A
Page
•
Added a new table to the Description - For additional design needs ................................................................................... 2
•
Changed the ABSOLUTE MAXIMUM RATINGS table, Input Voltage - EN pin max value From: 5V to 6V ........................ 2
Changes from Revision A (march 2010) to Revision B
Page
•
Deleted Swift™ from the data sheet title .............................................................................................................................. 1
•
Deleted feature Item: For SWIFT™ Documentation, See the TI Website at www.ti.com/swift ............................................ 1
20
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PACKAGE MATERIALS INFORMATION
www.ti.com
14-Jul-2012
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
TPS54332DDAR
Package Package Pins
Type Drawing
SO
Power
PAD
DDA
8
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
2500
330.0
12.4
Pack Materials-Page 1
6.4
B0
(mm)
K0
(mm)
P1
(mm)
5.2
2.1
8.0
W
Pin1
(mm) Quadrant
12.0
Q1
PACKAGE MATERIALS INFORMATION
www.ti.com
14-Jul-2012
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
TPS54332DDAR
SO PowerPAD
DDA
8
2500
367.0
367.0
35.0
Pack Materials-Page 2
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