DOMINANT DDH-GRS-M1

DOMINANT Semiconductors
DomiLED – AlGaAs: DDH-GRS
Anode marking
•
Surface mount LED.
•
120° viewing angle.
•
Small package outline (LxWxH) of 3.2 x 2.8 x 1.8 mm.
•
Qualified according to JEDEC moisture sensitivity Level 2.
•
Compatible to both IR reflow soldering and TTW soldering.
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DOMINANT Semiconductors
Part Ordering Number
Chip Technology /
Color (dom. WL)
DDH-GRS-MN2-1
AlGaAs/
•
•
•
DDH-GRS-M1
DDH-GRS-M2
DDH-GRS-N1
•
DDH-GRS-N2
Luminous Intensity @ If = 20mA
Iv ( mcd )
18.0 … 45.0
Hyper Red, 645 nm
18.0 … 22.4
22.4 … 28.5
28.5 … 35.5
35.5 … 45.0
28.5 … 71.5
DDH-GRS-NP2-1
•
•
•
DDH-GRS-N1
DDH-GRS-N2
DDH-GRS-P1
•
DDH-GRS-P2
28.5 … 35.5
35.5 … 45.0
45.0 … 56.0
56.0 … 71.5
NOTE:
1. All part number above comes in a quantity of 2000 units per reel.
2. Other luminous intensity groups are also available upon request.
3. Luminous intensity is measured with an accuracy of ±11%.
4. Wavelength binning is carried for all units as per the wavelength-binning table. Only one
wavelength group is allowed for each reel.
5. An optional Vf binning is also available upon request. Binning scheme is as per following table.
Characteristics.
Forward voltage
Chip Type
@ If=20 mA.
Viewing angle
at 50% Iv
1.9 V (typ.); 2.6 V (max)
AlGaAs
Reverse current, IR
@ VR = 5V, (max)
120°
100 μA
Wavelength Grouping.
Color
DDH; Hyper Red
Group
Full
Wavelength distribution (nm)
640 – 650
Dominant wavelength is measured with an accuracy of ±1 nm.
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DOMINANT Semiconductors
Vf Binning.
Vf Bin @ 20mA
Forward voltage (V)
01
1.55 … 1.85
02
1.85 … 2.15
03
2.15 … 2.45
04
2.45 … 2.60
Forward voltage, Vf is measured with an accuracy of ±0.1 V.
Absolute Maximum Ratings.
Maximum Value
Unit
DC forward current.
30
mA
Peak pulse current; (tp ≤ 10 μs, Duty cycle = 0.005)
500
mA
Reverse voltage.
5
V
100
°C
Operating temperature.
-40 … +100
°C
Storage temperature.
-40 … +100
°C
LED junction temperature.
Power dissipation ( at room temperature )
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DomiLED AlGaAs DDH-GRS - Catalogue-v2.doc
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DOMINANT Semiconductors
Recommended Solder Pad
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DOMINANT Semiconductors
Relative luminous intensity vs. forward current.
Forward current vs. forward voltage.
Forward Current vs. Forward Voltage
2.2
40
2
35
Forward Current (mA)
Relative intensity. Normalized at 20 mA.
Intensity vs. DC Forw ard Current
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
30
25
AlGaAs
20
15
10
5
0.2
0
0
0
10
20
30
40
50
1.0
60
1.2
1.4
2.0
2.2
2.4
Maximum forward current vs. temperature.
Radiation pattern.
20°
1.8
Forward Voltage (V)
FORW ARD CURRENT (m A)
30°
1.6
10°
0°
35
1.0
30
40°
0.8
50°
0.6
60°
0.4
Forward Current, If
25
20
15
10
70°
0.2
80°
5
0
10
20
30
0
90°
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DomiLED AlGaAs DDH-GRS - Catalogue-v2.doc
40
50
60
70
80
85
Ambient Temperature
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2.6
DOMINANT Semiconductors
Taping And Orientation.
Reels come in quantity of 2000 units.
Reel diameter is 180 mm.
Ø
C
5,55±0,1
12+0,3
-0,1
5,5±0,05
,1
+0
2,06±0,1
1,75±0,1
5 -0
1,
2±0,05
4±0,1
A
2
+0,
,5 - 0
Ø1
3,05±0,1
4±0,1
0,229±0,02
5
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DOMINANT Semiconductors
Recommended Sn-Pb IR-Reflow Soldering Profile.
Classification Reflow Profile (JEDEC J-STD-020C)
275
250
o
235-240 C
10-30s
Temperature (oC)
225
Ramp-up
3 oC/sec max.
200
183 oC
175
60-150s
150
125
Ramp-down
o
6 C/sec max.
100
Preheat
60-120s
75
50
360s max
25
0
50
100
150
200
Time (sec)
Recommended Pb Free IR-Reflow Soldering Profile.
Classification Reflow Profile (JEDEC J-STD-020C)
300
275
Temperature ( oC)
250
Ramp-up
3 oC/sec max.
217 oC
225
260-255oC
10-30s
200
60-150s
175
150
125
Ramp-down
6 oC/sec max.
100
Preheat
60-180s
75
50
480s max
25
0
50
100
150
200
Time (sec)
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DOMINANT Semiconductors
NOTE.
All the information published is considered to be reliable. However, DOMINANT
Semiconductors does not assume any liability arising out of the application or use of any
product described herein.
DOMINANT Semiconductors reserves the right to make changes at any time without notice
to any products in order to improve reliability, function or design.
DOMINANT Semiconductors products are not authorized for use as critical components in
life support devices or systems without the express written approval from the managing
director of DOMINANT Semiconductors.
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