VISHAY VLMBG3100-GS18

VLMB/BG/TG31..
Vishay Semiconductors
Standard SMD LED PLCC-2
FEATURES
• SMD LED with exceptional brightness
• Luminous intensity categorized
• Compatible with automatic placement
e3
equipment
• EIA and ICE standard package
• Compatible with IR reflow, vapor phase and wave
solder processes according to CECC 00802 and
J-STD-020B
• Available in 8 mm tape
• Low profile package
• Non-diffused lens: excellent for coupling to light
pipes and backlighting
• Low power consumption
• Luminous intensity ratio in one packaging unit
IVmax/IVmin ≤ 1.6
• Lead (Pb)-free device
• Preconditioning: acc. to JEDEC level 2a
• ESD-withstand voltage: > 1 kV acc. to MIL STD 883 D,
Method 3015.7
19225
DESCRIPTION
This device has been designed to meet the increasing
demand for InGaN technology.
The package of the VLMB/BG/TG31.. is the PLCC-2.
It consists of a lead frame which is embedded in a
white thermoplast. The reflector inside this package is
filled up with clear epoxy.
PRODUCT GROUP AND PACKAGE DATA
• Product group: LED
• Package: SMD PLCC-2
• Product series: standard
• Angle of half intensity: ± 60°
APPLICATIONS
• Automotive: backlighting in dashboards and
switches
• Telecommunication: indicator and backlighting in
telephone and fax
• Indicator and backlight for audio and video
equipment
• Indicator and backlight in office equipment
• Flat backlight for LCDs, switches and symbols
• General use
PARTS TABLE
PART
COLOR, LUMINOUS INTENSITY
TECHNOLOGY
VLMB3140-GS08
Blue, IV > 45 mcd
InGaN on SiC
VLMB3140-GS18
Blue, IV > 45 mcd
InGaN on SiC
VLMBG3100-GS08
Blue green, IV > 140 mcd
InGaN on SiC
VLMBG3100-GS18
Blue green, IV > 140 mcd
InGaN on SiC
VLMTG3100-GS08
True green, IV > 180 mcd
InGaN on SiC
VLMTG3100-GS18
True green, IV > 180 mcd
InGaN on SiC
Document Number 81242
Rev. 1.1, 31-Aug-07
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1
VLMB/BG/TG31..
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS1) VLMB3140, VLMBG3100, VLMTG3100
PARAMETER
TEST CONDITION
SYMBOL
VALUE
VR
5
V
Tamb ≤ 80 °C
IF
20
mA
tp ≤ 10 µs
IFSM
0.2
A
Power dissipation
PV
84
mW
Junction temperature
Tj
110
°C
Operating temperature range
Tamb
- 40 to + 100
°C
Storage temperature range
Tstg
- 40 to + 100
°C
RthJA
350
K/W
Reverse voltage2)
DC Forward current
Surge forward current
Thermal resistance junction/
ambient
mounted on PC board
(pad size > 16 mm2)
UNIT
Note:
1)
Tamb = 25 °C, unless otherwise specified
2) Driving LED in reverse direction is suitable for short term application
OPTICAL AND ELECTRICAL CHARACTERISTICS1) VLMB3140, BLUE
PARAMETER
TEST CONDITION
intensity2)
SYMBOL
MIN
TYP
MAX
UNIT
IF = 20 mA
IV
45
100
Dominant wavelength
IF = 20 mA
λd
462
470
Peak wavelength
IF = 20 mA
λp
464
nm
Angle of half intensity
IF = 20 mA
ϕ
± 60
deg
Forward voltage
IF = 20 mA
VF
3
Reverse voltage
IR = 10 µA
VR
Temperature coefficient of VF
IF = 20 mA
TCV
-4
mV/K
Temperature coefficient of IV
IF = 20 mA
TCI
- 0.4
%/K
Luminous
mcd
476
4.2
5
nm
V
V
Note:
1)
Tamb = 25 °C, unless otherwise specified
2) in one Packing Unit I
Vmax/IVmin ≤ 1.6
OPTICAL AND ELECTRICAL CHARACTERISTICS1) VLMBG3100, BLUE GREEN
PARAMETER
TEST CONDITION
SYMBOL
MIN
TYP
Luminous intensity
IF = 20 mA
IV
140
220
Dominant wavelength
IF = 20 mA
λd
496
505
Peak wavelength
IF = 20 mA
λp
502
nm
Angle of half intensity
IF = 20 mA
ϕ
± 60
deg
2)
MAX
UNIT
mcd
514
nm
Forward voltage
IF = 20 mA
VF
Reverse voltage
IR = 10 µA
VR
Temperature coefficient of VF
IF = 20 mA
TCV
-4
mV/K
Temperature coefficient of IV
IF = 20 mA
TCI
- 0.2
%/K
3
5
4.2
V
V
Note:
1) T
amb = 25 °C, unless otherwise specified
2) in one Packing Unit I
Vmax/IVmin ≤ 1.6
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Document Number 81242
Rev. 1.1, 31-Aug-07
VLMB/BG/TG31..
Vishay Semiconductors
OPTICAL AND ELECTRICAL CHARACTERISTICS1) VLMTG3100, TRUE GREEN
PARAMETER
TEST CONDITION
SYMBOL
MIN
TYP
IF = 20 mA
IV
180
300
Dominant wavelength
IF = 20 mA
λd
515
528
Peak wavelength
IF = 20 mA
λp
522
nm
Angle of half intensity
IF = 20 mA
ϕ
± 60
deg
Luminous
intensity2)
MAX
UNIT
mcd
541
nm
Forward voltage
IF = 20 mA
VF
Reverse voltage
IR = 10 µA
VR
Temperature coefficient of VF
IF = 20 mA
TCV
- 3.5
mV/K
Temperature coefficient of IV
IF = 20 mA
TCI
- 0.3
%/K
3
4.2
V
5
V
Note:
1)
Tamb = 25 °C, unless otherwise specified
2) In one Packing Unit I
Vmax/IVmin ≤ 1.6
LUMINOUS INTENSITY CLASSIFICATION
GROUP
STANDARD
P
Q
R
S
T
U
LIGHT INTENSITY (MCD)
OPTIONAL
MIN
MAX
1
45
56
2
56
71
1
71
90
2
90
112
1
112
140
2
140
180
1
180
224
2
224
280
1
280
355
2
355
450
1
450
560
2
560
710
Note:
Luminous intensity is tested at a current pulse duration of 25 ms and
an accuracy of ± 11 %.
The above type numbers represent the order groups which include
only a few brightness groups. Only one group will be shipped on
each reel (there will be no mixing of two groups on each reel).
In order to ensure availability, single brightness groups will not be
orderable.
In a similar manner for colors where wavelength groups are
measured and binned, single wavelength groups will be shipped on
any one reel.
In order to ensure availability, single wavelength groups will not be
orderable.
CROSSING TABLE
VISHAY
OSRAM
VLMB3140
LBT673
VLMBG3100
LVT673
VLMTG3100
LTT673
COLOR CLASSIFICATION
BLUE
BLUE GREEN
GROUP
MIN.
MAX.
2
458
464
3
462
4
466
5
6
Document Number 81242
Rev. 1.1, 31-Aug-07
TRUE GREEN
DOM. WAVELENGTH (NM)
MIN.
MAX.
MIN.
MAX.
468
496
502
515
523
472
500
506
521
529
470
476
504
510
527
535
474
480
508
514
533
541
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VLMB/BG/TG31..
Vishay Semiconductors
TYPICAL CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
25
1.2
1.1
IV rel - Relative Luminous Intensity
IF - Forward Current (mA)
20
15
10
5
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.0
0
16806
10 20 30 40 50 60 70 80 90 100 110
400
70
60
50
40
30
20
10
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VF - Forward Voltage (V)
19918
Figure 2. Forward Current vs. Forward Voltage
IV rel - Relative Luminous Intensity
0.01
1
16194
10
I F - Forward Current (mA)
100
Figure 3. Specific Luminous Flux vs. Forward Current
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4
500
520
540
560
Figure 5. Relative Intensity vs. Wavelength
10
0.1
480
λ - Wavelength (nm)
16070
1
460
1.2
1.1
blue green
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
420 440 460 480 500 520 540 560 580 600
I Vrel - Relative Luminous Intensity
IF - Forward Current (mA)
80
440
Figure 4. Relative Intensity vs. Wavelength
100
90
420
λ - Wavelength (nm)
16069
Tamb - Ambient Temperature (°C)
Figure 1. Forward Current vs. Ambient Temperature for InGaN
I Vrel - Relative Luminous Intensity
blue
1.0
1.2
1.1
true green
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
460 480 500 520 540 560 580 600 620
16068
λ - Wavelength (nm)
Figure 6. Relative Intensity vs. Wavelength
Document Number 81242
Rev. 1.1, 31-Aug-07
VLMB/BG/TG31..
Vishay Semiconductors
476
538
Dominant Wavelengthı λ (nm)
Dominant Wavelengthı λ (nm)
blue
474
472
470
536
true green
534
532
530
528
526
468
524
0
10
20
30
40
50
0
IF - Forward Current (mA)
16814
10
30
IV rel - Relative Luminous Intensity
0°
Dominant Wavelengthı λ (nm)
blue green
513
511
509
507
505
503
501
0
10
20
30
40
50
Figure 9. Dominant Wavelength vs. Forward Current
515
16813
40
I F - Forward Current (mA)
16812
Figure 7. Dominant Wavelength vs. Forward Current
20
20°
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
50
95 10319
I F - Forward Current (mA)
10°
0.6
0.4
0.2
0
0.2
0.4
0.6
Figure 10. Relative Luminous Intensity
Figure 8. Dominant Wavelength vs. Forward Current
PACKAGE DIMENSIONS in millimeters
3.5 ± 0.2
0.9
1.75 ± 0.10
technical drawings
according to DIN
specifications
Mounting Pad Layout
Pin identification
area covered with
solder resist
4
2.6 (2.8)
A
2.8
C
2.2
+ 0.15
1.2
4
1.6 (1.9)
?
3
2.4
+ 0.15
Drawing-No.: 6.541-5025.01-4
Issue: 8; 22.11.05
95 11314-1
Document Number 81242
Rev. 1.1, 31-Aug-07
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VLMB/BG/TG31..
Vishay Semiconductors
METHOD OF TAPING/POLARITY AND TAPE AND REEL
SMD LED (VLM3 - SERIES)
Vishay’s LEDs in SMD packages are available in an
antistatic 8 mm blister tape (in accordance with
DIN IEC 40 (CO) 564) for automatic component
insertion. The blister tape is a plastic strip with
impressed component cavities, covered by a top tape.
REEL PACKAGE DIMENSION IN MM FOR
SMD LEDS, TAPE OPTION GS08
(= 1500 PCS.)
10.0
9.0
120°
4.5
3.5
Adhesive Tape
2.5
1.5
13.00
12.75
63.5
60.5
Identification
Label:
Vishay
Type
Group
Tape Code
Production
Code
Quantity
Blister Tape
Component Cavity
14.4 max.
180
178
94 8665
Figure 12. Reel Dimensions - GS08
94 8670
REEL PACKAGE DIMENSION IN MM FOR
SMD LEDS, TAPE OPTION GS18
(= 8000 PCS.) PREFERRED
TAPING OF VLM.3..
2.2
2.0
3.5
3.1
10.4
8.4
120°
5.75
5.25
3.6
3.4
4.5
3.5
4.0
3.6
2.5
1.5
8.3
7.7
13.00
12.75
62.5
60.0
Identification
1.85
1.65
1.6
1.4
4.1
3.9
4.1
3.9
0.25
2.05
1.95
94 8668
Figure 11. Tape Dimensions in mm for PLCC-2
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Label:
Vishay
Type
Group
Tape Code
Production
Code
Quantity
321
329
14.4 max.
18857
Figure 13. Reel Dimensions - GS18
Document Number 81242
Rev. 1.1, 31-Aug-07
VLMB/BG/TG31..
Vishay Semiconductors
SOLDERING PROFILE
BARCODE PRODUCT LABEL
EXAMPLE:
IR Reflow Soldering Profile for lead (Pb)-free soldering
Preconditioning acc. to JEDEC Level 2a
300
106
255 °C
240 °C
217 °C
250
Temperature (°C)
max. 260 °C
245 °C
A
H
VISHAY
200
max. 30 s
37
150
max. 100 s
max. 120 s
100
B C
D
E
F
G
19919
max. ramp down 6 °C/s
max. ramp up 3 °C/s
50
0
0
50
100
150
Time (s)
200
250
300
max. 2 cycles allowed
19885
Figure 14. Vishay Lead (Pb)-free Reflow Soldering Profile
(acc. to J-STD-020B)
TTW Soldering
300
948626-1
(acc. to CECC00802)
5s
Lead Temperature
A) Type of component
B) Manufacturing plant
C) SEL - selection code (bin):
e.g.: R2 = code for luminous intensity group
3 = code for color group
D) Date code year/week
E) Day code (e. g. 3: Wednesday)
F) Batch no.
G) Total quantity
H) Company code
Temperature (°C)
250
200
second
wave
235 °C...260 °C
first wave
full line: typical
dotted line: process limits
ca. 2 K/s
ca. 200 K/s
150
100 °C...130 °C
DRY PACKING
The reel is packed in an anti-humidity bag to protect
the devices from absorbing moisture during
transportation and storage.
100
ca. 5 K/s
2 K/s
50
forced cooling
Aluminum bag
0
0
50
100
150
200
250
Time (s)
Label
Figure 15. Double Wave Soldering of Opto Devices (all Packages)
Reel
15973
FINAL PACKING
The sealed reel is packed into a cardboard box. A
secondary cardboard box is used for shipping
purposes.
Document Number 81242
Rev. 1.1, 31-Aug-07
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VLMB/BG/TG31..
Vishay Semiconductors
RECOMMENDED METHOD OF STORAGE
Dry box storage is recommended as soon as the
aluminum bag has been opened to prevent moisture
absorption. The following conditions should be
observed, if dry boxes are not available:
• Storage temperature 10 °C to 30 °C
• Storage humidity ≤ 60 % RH max.
After more than 672 h under these conditions moisture
content will be too high for reflow soldering.
In case of moisture absorption, the devices will recover
to the former condition by drying under the following
condition:
192 h at 40 °C + 5 °C/- 0 °C and < 5 % RH (dry air/
nitrogen) or
96 h at 60 °C + 5 °C and < 5 % RH for all device
containers or
24 h at 100 °C + 5 °C not suitable for reel
or tubes.
An EIA JEDEC Standard JESD22-A112 level 2a label
is included on all dry bags.
ESD PRECAUTION
Proper storage and handling procedures should be
followed to prevent ESD damage to the devices
especially when they are removed from the antistatic
shielding bag. Electro-static sensitive devices warning
labels are on the packaging.
VISHAY SEMICONDUCTORS STANDARD
BAR CODE LABELS
The Vishay Semiconductors standard bar code labels
are printed at final packing areas. The labels are on
each packing unit and contain Vishay Semiconductors
specific data.
L E V E L
CAUTION
This bag contains
MOISTURE –SENSITIVE DEVICES
2a
1. Shelf life in sealed bag 12 months at <40°C and < 90% relative humidity (RH)
2. After this bag is opened devices that will be subjected to infrared reflow,
vapor-phase reflow, or equivalent processing (peak package body temp.
260°C) must be:
a) Mounted within 672 hours at factory condition of < 30°C/60%RH or
b) Stored at <10% RH.
3. Devices require baking before mounting if:
a)
Humidity Indicator Card is >10% when read at 23°C + 5°C or
b)
2a or 2b is not met.
4. If baking is required, devices may be baked for:
192 hours at 40°C + 5°C/-0°C and <5%RH (dry air/nitrogen)
or
o
or
96 hours at 60±5 Cand <5%RH
For all device containers
24 hours at 100±5°C
Not suitable for reels or tubes
Bag Seal Date: ______________________________
(If blank, see bar code label)
Note: LEVEL defined by EIA JEDEC Standard JESD22-A113
19786
Example of JESD22-A112 level 2a label
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Document Number 81242
Rev. 1.1, 31-Aug-07
VLMB/BG/TG31..
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or
unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and
expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such
unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 81242
Rev. 1.1, 31-Aug-07
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9
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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1