VISHAY TLMS3201

TLMK/O/S/Y320.
Vishay Semiconductors
Power SMD LED PLCC-4
19210
DESCRIPTION
The TLM.32.. series is an advanced development in
terms of heat dissipation.
The leadframe profile of this PLCC-3 SMD package is
optimized to reduce the thermal resistance.
This allows higher drive current and doubles the light
output compared to Vishay’s high intensity SMD LED
in PLCC-2 package.
PRODUCT GROUP AND PACKAGE DATA
• Product group: LED
• Package: SMD PLCC-4
• Product series: power
• Angle of half intensity: ± 60°
FEATURES
• Utilizing AlInGaP technology
• Available in 8 mm tape
• Luminous intensity, color and forward
voltage categorized per packing unit
• Luminous intensity ratio per packing unit
IVmax/IVmin ≤ 1.6
• ESD class 2
• Suitable for all soldering methods
according to CECC
• Lead (Pb)-free device
e3
APPLICATIONS
• Traffic Signals and Signs
• Interior and exterior lighting
• Dashboard illumination
• Indicator and backlighting purposes for audio,
video, LCDs switches, symbols, illuminated
advertising etc.
PARTS TABLE
PART
COLOR, LUMINOUS INTENSITY
DOMINANT WAVELENGTH
TLMK3200
Red, IV > 200 mcd (typ. 500 mcd)
611 nm to 622 nm
TLMK3201
Red, IV = (250 to 800) mcd
611 nm to 622 nm
TLMK3202
Red, IV = (320 to 800) mcd
611 nm to 622 nm
TLMK3203
Red, IV = (400 to 1250) mcd
611 nm to 622 nm
TLMS3200
Red, IV > 160 mcd (typ. 300 mcd)
626 nm to 638 nm
TLMS3201
Red, IV = (160 to 400) mcd
626 nm to 638 nm
TLMS3202
Red, IV = (250 to 800) mcd
626 nm to 638 nm
TLMO3200
Soft orange, IV > 200 mcd (typ. 500 mcd)
600 nm to 611 nm
TLMO3201
Soft orange, IV = (250 to 800) mcd
600 nm to 611 nm
TLMO3202
Soft orange, IV = (320 to 800) mcd
600 nm to 611 nm
TLMO3203
Soft orange, IV = (400 to 1250) mcd
600 nm to 611 nm
TLMY3200
Yellow, IV > 200 mcd (typ. 450 mcd)
583 nm to 594 nm
TLMY3201
Yellow, IV = (250 to 800) mcd
583 nm to 594 nm
TLMY3202
Yellow, IV = (320 to 800) mcd
583 nm to 594 nm
TLMY3203
Yellow, IV = (400 to 1250) mcd
583 nm to 594 nm
Document Number 83146
Rev. 1.5, 24-Sep-07
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1
TLMK/O/S/Y320.
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS1) TLMK32.., TLMS32.., TLMO32.., TLMY32..
SYMBOL
VALUE
Reverse voltage
PARAMETER
VR
5
V
Forward current
IF
70
mA
Ptot
180
mW
Power dissipation
TEST CONDITION
Tamb ≤ 65 °C (290 K/W),
Tamb ≤ 70 °C (270 K/W)
UNIT
Tj
125
°C
Operating temperature range
Tamb
- 40 to + 100
°C
Storage temperature range
Tstg
- 40 to + 100
°C
mounted on PC board FR4
optional paddesign (see page 11)
RthJA
290
K/W
mounted on PC board FR4
recommended paddesign (see page 10)
RthJA
270
K/W
Junction temperature
Thermal resistance junction/
ambient
Note:
1)
Tamb = 25 °C, unless otherwise specified
OPTICAL AND ELECTRICAL CHARACTERISTICS1) TLMK32.., RED
PARAMETER
TEST CONDITION
IF = 50 mA
Luminous intensity
PART
SYMBOL
MIN
TYP.
TLMK3200
IV
200
500
TLMK3201
IV
TLMK3202
TLMK3203
Luminous flux/Luminous
intensity
MAX
UNIT
250
800
mcd
IV
320
800
mcd
IV
400
1250
mcd
φV/IV
mcd
3
mlm/mcd
Dominant wavelength
IF = 50 mA
λd
Peak wavelength
IF = 50 mA
λp
624
nm
Spectral bandwidth
at 50 % Irel max
IF = 50 mA
Δλ
18
nm
Angle of half intensity
IF = 50 mA
ϕ
± 60
deg
Forward voltage
IF = 50 mA
VF
Reverse current
VR = 5 V
VR
611
1.85
617
622
nm
2.1
2.55
V
0.01
10
µA
MAX
UNIT
Note:
1) T
amb = 25 °C, unless otherwise specified
OPTICAL AND ELECTRICAL CHARACTERISTICS1) TLMS32.., RED
PARAMETER
TEST CONDITION
Luminous intensity
IF = 50 mA
Luminous flux/Luminous
intensity
PART
SYMBOL
MIN
TYP.
TLMS3200
IV
160
300
TLMS3201
IV
160
400
mcd
TLMS3202
IV
250
800
mcd
φV/IV
mcd
3
mlm/mcd
Dominant wavelength
IF = 50 mA
λd
Peak wavelength
IF = 50 mA
λp
641
nm
Spectral bandwidth
at 50 % Irel max
IF = 50 mA
Δλ
17
nm
Angle of half intensity
IF = 50 mA
ϕ
± 60
deg
Forward voltage
IF = 50 mA
VF
Reverse current
VR = 5 V
VR
626
1.85
630
638
nm
2.1
2.55
V
0.01
10
µA
Note:
1)
Tamb = 25 °C, unless otherwise specified
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Document Number 83146
Rev. 1.5, 24-Sep-07
TLMK/O/S/Y320.
Vishay Semiconductors
OPTICAL AND ELECTRICAL CHARACTERISTICS1) TLMO32.., SOFT ORANGE
PARAMETER
TEST CONDITION
IF = 50 mA
Luminous intensity
PART
SYMBOL
MIN
TYP.
TLMO3200
IV
200
500
TLMO3201
IV
250
TLMO3202
IV
TLMO3203
IV
Luminous flux/Luminous
intensity
MAX
UNIT
mcd
800
mcd
320
800
mcd
400
1250
mcd
φV/IV
3
mlm/mcd
Dominant wavelength
IF = 50 mA
λd
Peak wavelength
IF = 50 mA
λp
611
nm
Spectral bandwidth
at 50 % Irel max
IF = 50 mA
Δλ
17
nm
Angle of half intensity
IF = 50 mA
ϕ
± 60
deg
Forward voltage
IF = 50 mA
VF
Reverse current
VR = 5 V
VR
600
605
1.85
611
nm
2.1
2.55
V
0.01
10
µA
MAX
UNIT
Note:
1)
Tamb = 25 °C, unless otherwise specified
OPTICAL AND ELECTRICAL CHARACTERISTICS1) TLMY32.., YELLOW
PARAMETER
TEST CONDITION
IF = 50 mA
Luminous intensity
PART
SYMBOL
MIN
TYP.
TLMY3200
IV
200
450
TLMY3201
IV
250
800
mcd
TLMY3202
IV
320
800
mcd
TLMY3203
IV
400
1250
mcd
Luminous flux/Luminous
intensity
φV/IV
mcd
3
mlm/mcd
Dominant wavelength
IF = 50 mA
λd
Peak wavelength
IF = 50 mA
λp
590
nm
Spectral bandwidth
at 50 % Irel max
IF = 50 mA
Δλ
18
nm
Angle of half intensity
IF = 50 mA
ϕ
Forward voltage
IF = 50 mA
VF
Reverse current
VR = 5 V
VR
583
588
594
± 60
1.85
nm
deg
2.1
2.55
V
0.01
10
µA
Note:
1)
Tamb = 25 °C, unless otherwise specified
FORWARD VOLTAGE CLASSIFICATION
GROUP
FORWARD VOLTAGE (V)
MIN
MAX
1
1.85
2.25
2
2.15
2.55
Document Number 83146
Rev. 1.5, 24-Sep-07
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TLMK/O/S/Y320.
Vishay Semiconductors
COLOR CLASSIFICATION
DOMINANT WAVELENGTH (NM)
GROUP
RED
SOFT ORANGE
YELLOW
MIN
MIN
MAX
MIN
MAX
MAX
1
611
618
598
601
581
584
2
614
622
600
603
583
586
3
602
605
585
588
4
604
607
587
590
5
606
609
589
592
6
608
611
591
594
LUMINOUS INTENSITY CLASSIFICATION
LUMINOUS INTENSITY (MCD)
GROUP
MIN
MAX
Xa
160
250
Xb
200
320
Ya
250
400
Yb
320
500
Za
400
630
Zb
500
800
0a
630
1000
0b
800
1250
GROUP NAME ON LABEL
LUMINOUS INTENSITY GROUP
HALFGROUP
WAVELENGTH
FORWARD VOLTAGE
Z
b
2
1
One packing unit/tape contains only one classification group of luminous intensity, color and forward voltage.
Only one single classification groups is not available.
The given groups are not order codes, customer specific group combinations require marketing agreement.
No color subgrouping for Super Red.
TYPICAL CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
100
180
90
270 K/W
160
IF - Forward Current (mA)
PV - Power Dissipation (mW)
200
RthJA = 290 K/W
140
120
100
80
60
40
20
80
70
40
30
20
10
0
0
25
50
75
100
0
125
Tamb - Ambient Temperature (°C)
Figure 1. Power Dissipation vs. Ambient Temperature
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4
RthJA = 290 K/W
50
0
18567
270 K/W
60
18568
25
50
75
100
Tamb - Ambient Temperature (°C)
125
Figure 2. Forward Current vs. Ambient Temperature
Document Number 83146
Rev. 1.5, 24-Sep-07
TLMK/O/S/Y320.
Vishay Semiconductors
0°
10°
20°
2.5
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
95 10319
0.6
0.4
0.2
0
0.2
0.4
IV rel - Relative Luminous Intensity
IV rel - Relative Luminous Intensity
30°
red
2.0
1.5
1.0
0.5
0.0
- 50
0.6
1.2
IV rel - Relative Luminous Intensity
red
1.0
0.8
0.6
0.4
50
75
100
6
red
4
2
0
-2
-4
-6
- 50
0.0
570
590
610
630
650
670
λ - Wavelength (nm)
16007
25
50
75
100
IV rel - Relative Luminous Intensity
10
200
red
50 mA
150
100
30 mA
0
- 50
10 mA
- 100
- 150
- 200
- 50
17034
0
Figure 7. Change of Dominant Wavelength vs.
Ambient Temperature
250
50
- 25
Tamb - Ambient Temperature (°C)
17036
Figure 4. Relative Intensity vs. Wavelength
VF - Change of Forward Voltage (mV)
25
d
0.2
0
Figure 6. Relative Luminous Intensity vs. Amb. Temperature
- Change of Dom. Wavelength (nm)
Figure 3. Rel. Luminous Intensity vs. Angular Displacement
- 25
Tamb - Ambient Temperature (°C)
17035
red
1
0.1
0.01
- 25
0
25
50
75
Tamb - Ambient Temperature (°C)
Figure 5. Change of Forward Voltage vs. Ambient Temperature
Document Number 83146
Rev. 1.5, 24-Sep-07
1
100
17037
10
IF - Forward Current (mA)
100
Figure 8. Relative Luminous Intensity vs. Forward Current
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TLMK/O/S/Y320.
VF - Change of Forward Voltage (mV)
1.5
1.0
0.5
0.0
- 0.5
d
- 1.0
- 1.5
17038
10 20 30 40 50 60 70 80 90 100
IF - Forward Current (mA)
Figure 9. Change of Dominant Wavelength vs. Forward Current
I Vrel - Relative Luminous Intensity
1.2
1.1
red
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
600 610 620 630 640 650 660 670 680 690 700
λ - Wavelength (nm)
17045
Figure 10. Relative Intensity vs. Wavelength
100
I F - Forward Current (mA)
90
80
red
70
60
50
40
30
20
10
17047
0
1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4
VF - Forward Voltage (V)
Figure 11. Forward Current vs. Forward Voltage
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6
250
200
30 mA
red
150
100
50 mA
50
0
10 mA
- 50
- 100
- 150
- 200
- 50
- 25
0
25
50
75
100
Tamb - Ambient Temperature (°C)
17039
Figure 12. Change of Forward Voltage vs. Ambient Temperature
2.5
I Vrel - Relative Luminous Intensity
red
red
2.0
1.5
1.0
0.5
0.0
- 50
- 25
0
25
50
75
100
Tamb - Ambient Temperature (°C)
17040
Figure 13. Relative Luminous Intensity vs. Amb. Temperature
Δ λ d - Change of Dom. W avelength (nm)
- Change of Dom. Wavelength (nm)
Vishay Semiconductors
17041
3
red
2
1
0
-1
-2
-3
-4
-5
- 50
- 25
0
25
50
75
100
Tamb - Ambient Temperature (°C)
Figure 14. Change of Dominant Wavelength vs.
Ambient Temperature
Document Number 83146
Rev. 1.5, 24-Sep-07
TLMK/O/S/Y320.
VF - Change of Forward Voltage (mV)
Vishay Semiconductors
IV rel - Relative Luminous Intensity
10
super red
1
0
250
50 mA
200
100
10
0
- 100
- 150
- 200
- 50
17020
1.5
100
2.5
red
1.0
0.5
0.0
- 0.5
- 1.0
soft orange
2.0
1.5
1.0
0.5
- 1.5
0.0
- 50
10 20 30 40 50 60 70 80 90 100
17043
IF - Forward Current (mA)
17021
1.2
soft orange
1.0
0.8
0.6
0.4
6
soft orange
4
2
0
-2
-4
d
0.2
- 25
0
25
50
75
100
Tamb - Ambient Temperature (°C)
Figure 19. Relative Luminous Intensity vs. Amb. Temperature
- Change of Dom. Wavelength (nm)
Figure 16. Change of Dominant Wavelength vs. Forward Current
IV rel - Relative Luminous Itensity
- 25
0
25
50
75
Tamb - Ambient Temperature (°C)
Figure 18. Change of Forward Voltage vs. Ambient Temperature
IV rel - Relative Luminous Intensity
Δ λ d - Change of Dom. Wavelength (nm)
Figure 15. Relative Luminous Intensity vs. Forward Current
10 mA
- 50
100
IF - Forward Current (mA)
17042
soft orange
50
0.01
1
30 mA
150
0.0
560
16314
580
600
620
640
660
λ - Wavelength (nm)
Figure 17. Relative Intensity vs. Wavelength
Document Number 83146
Rev. 1.5, 24-Sep-07
-6
- 50
17022
- 25
0
25
50
75
100
Tamb - Ambient Temperature (°C)
Figure 20. Change of Dominant Wavelength vs.
Ambient Temperature
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TLMK/O/S/Y320.
Vishay Semiconductors
IV rel - Relative Luminous Intensity
soft orange
1
0.1
0.01
1
10
IF - Forward Current (mA)
17023
50 mA
yellow
150
100
50
0
10 mA
- 50
- 100
- 150
- 200
- 50
17015
- 25
0
25
50
75
Tamb - Ambient Temperature (°C)
100
Figure 24. Change of Forward Voltage vs. Ambient Temperature
2.5
1.5
yellow
IV rel - Relative Luminous Intensity
soft orange
1.0
0.5
0.0
- 0.5
d
- 1.0
2.0
1.5
1.0
0.5
0.0
- 50
- 1.5
10 20 30 40 50 60 70 80 90 100
17024
IF - Forward Current (mA)
yellow
1.0
0.8
0.6
0.4
25
50
75
100
6
yellow
4
2
0
-2
-4
d
0.2
0
Figure 25. Relative Luminous Intensity vs. Amb. Temperature
- Change of Dom. Wavelength (nm)
1.2
- 25
Tamb - Ambient Temperature (°C)
17016
Figure 22. Change of Dominant Wavelength vs. Forward Current
IV rel - Relative Luminous Intensity
30 mA
200
100
Figure 21. Relative Luminous Intensity vs. Forward Current
- Change of Dom. Wavelength (nm)
250
Δ VF - Change of Forward Voltage (mV)
10
0.0
540
16008
560
580
600
620
640
λ - Wavelength (nm)
Figure 23. Relative Intensity vs. Wavelength
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8
-6
- 50
17017
- 25
0
25
50
75
Tamb - Ambient Temperature (°C)
100
Figure 26. Change of Dominant Wavelength vs.
Ambient Temperature
Document Number 83146
Rev. 1.5, 24-Sep-07
TLMK/O/S/Y320.
Vishay Semiconductors
IV rel - Relative Luminous Intensity
10
100
90
yellow
I F - Forward Current (mA)
1
0.1
yellow
soft orange
red
super red
80
70
60
50
40
30
20
10
0.01
1
10
0
1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5
100
IF - Forward Current (mA)
17018
Figure 27. Relative Luminous Intensity vs. Forward Current
Figure 29. Forward Current vs. Forward Voltage
1.5
0.12
yellow
1.0
IF - Forward Current (A)
0.10
0.5
0.0
- 0.5
- 1.0
0.08
tP/T = 0.005
0.05
0.5
0.06
0.04
0.02
d
- Change of Dom. Wavelength (nm)
VF - Forward Voltage (V)
17046
- 1.5
0.00
10 -5
10 20 30 40 50 60 70 80 90 100
10 -4
10 -3
Figure 28. Change of Dominant Wavelength vs. Forward Current
10 -2
10 -1
10 0
101
10 2
tP - Pulse Length (s)
17044
IF - Forward Current (mA)
17019
Figure 30. Forward Current vs. Pulse Length
TAPING in millimeters
Anode
3.5
3.1
Cathode
2.2
2.0
4.0
3.6
5.75
5.25
3.6
3.4
Cathode
8.3
7.7
1.85
1.65
1.6
1.4
4.1
3.9
4.1
3.9
0.25
2.05
1.95
18596
Document Number 83146
Rev. 1.5, 24-Sep-07
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9
TLMK/O/S/Y320.
Vishay Semiconductors
RECOMMENDED PAD DESIGN in millimeters
(Wave-Soldering), RthJA = 270 K/W
16260
RECOMMENDED PAD DESIGN in millimeters
(Reflow-Soldering), RthJA = 270 K/W
16261
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Document Number 83146
Rev. 1.5, 24-Sep-07
TLMK/O/S/Y320.
Vishay Semiconductors
OPTIONAL PAD DESIGN in millimeters
(Wave-Soldering), RthJA = 290 K/W
16262
OPTIONAL PAD DESIGN in millimeters
(Reflow-Soldering), RthJA = 290 K/W
16263
Document Number 83146
Rev. 1.5, 24-Sep-07
www.vishay.com
11
TLMK/O/S/Y320.
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
Mounting Pad Layout
area covered with
solder resist
4
0.5
2.6 (2.8)
1.2
4
1.6 (1.9)
Drawing-No. : 6.541-5054.01-4
Issue: 2; 02.12.05
Dimensions: IR and Vaporphase
(Wave Soldering)
16276_1
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Document Number 83146
Rev. 1.5, 24-Sep-07
TLMK/O/S/Y320.
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or
unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and
expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such
unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 83146
Rev. 1.5, 24-Sep-07
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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