RU140N10 N-Channel Advanced Power MOSFET Features Pin Description • 100V/140A RDS (ON)=6.5mΩ(Typ.) @ VGS=10V • Ultra Low On-Resistance TO-220 TO-220F TO-247 TO-263 • Low Gate Charge • Fast Switching and Fully Avalanche Rated • 100% avalanche tested Applications ·Switching applications N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 100 VGSS Gate-Source Voltage ±25 Maximum Junction Temperature 175 °C -55 to 175 °C TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V ① TC=25°C 140 TC=25°C 560 TC=25°C 140 TC=100°C 100 250 A Mounted on Large Heat Sink IDP 300µs Pulsed Drain Current Tested ID Continue Drain Current PD TC=25°C TC=100°C Maximum Power Dissipation ② ① A ① W 125 RθJC Thermal Resistance -Junction to Case 0.6 RθJA Thermal Resistance-Junction to Ambient 62.5 °C/W Drain-Source Avalanche Ratings ③ Avalanche Energy ,Single Pulsed EAS Storage Temperature Range 1.1 -55 to 150 Copyright Ruichips Semiconductor Co., Ltd Rev.A –SEP., 2010 www.ruichips.com J RU140N10 Electrical Characteristics (TA=25°C Unless Otherwise Noted) RU140N10 Symbol Parameter Test Condition Unit Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS=0V, IDS=250µA 100 V VDS= 100V, VGS=0V 1 TJ=85°C VGS(th) IGSS RDS(ON) ④ Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±25V, VDS=0V Drain-Source On-state Resistance VGS= 10V, IDS=40A 30 2 3 6.5 µA 4 V ±100 nA 8 mΩ 1.2 V Diode Characteristics VSD ④ Diode Forward Voltage ISD=40 A, VGS=0V Reverse Recovery Time trr 90 ns 200 nC 1.6 Ω ISD=40A, dlSD/dt=100A/µs Reverse Recovery Charge qrr ⑤ Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance 250 td(ON) Turn-on Delay Time 30 tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS= 25V, Frequency=1.0MHz VDD=50V,IDS= 70A, VGEN= 10V,RG=2.5Ω Turn-off Fall Time 7550 pF 810 210 ns 160 120 ⑤ Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: 135 VDS=80V, VGS= 10V, IDS=70A 30 175 nC 45 ①Current limited by package. ②Pulse width limited by safe operating area. ③IAS =55A, VDD = 50V, RG = 47Ω , Starting TJ = 25°C. ④Pulse test ; Pulse width≤400µs, duty cycle≤2%. ⑤Guaranteed by design, not subject to production testing. Copyright Ruichips Semiconductor Co., Ltd Rev. A –SEP., 2010 2 www.ruichips.com RU140N10 Typical Characteristics Drain Current Ptot-Power(W) ID - Drain Current (A) Power Dissipation Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Thermal Transient Impedance ID - Drain Current (A) Normalized Effective Transient Safe Operation Area VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. A –SEP., 2010 Square Wave Pulse Duration (sec) 3 www.ruichips.com RU140N10 Typical Characteristics Drain-Source On Resistance ID - Drain Current (A) RDS(ON) - On Resistance (mΩ) Output Characteristics VDS - Drain-Source Voltage (V) ID - Drain Current (A) Normalized Gate Threshold Voltage RDS(ON) - On - Resistance (mΩ) Normalized Gate-Source Voltage (V) Drain-Source On Resistance VGS - Gate - Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. A –SEP., 2010 Tj - Junction Temperature (°C) 4 www.ruichips.com RU140N10 Typical Characteristics Source-Drain Diode Forward IS - Source Current (A) Normalized On Resistance Drain-Source On Resistance Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V) Gate Charge C - Capacitance (pF) VGS - Gate-Source Voltage (V) Capacitance VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. A –SEP., 2010 QG - Gate Charge (nC) 5 www.ruichips.com RU140N10 Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Copyright Ruichips Semiconductor Co., Ltd Rev. A –SEP., 2010 6 www.ruichips.com RU140N10 Ordering and Marking Information RU140N10 Package (Available) R : TO-220; S: TO-263 ; Q: TO-247 Operating Temperature Range C : -55 to 175 ºC Assembly Material G : Green & Lead Free Device Packaging T : TUBE TR : Tape & Reel Copyright Ruichips Semiconductor Co., Ltd Rev. A –SEP., 2010 7 www.ruichips.com RU140N10 Package Information TO-220FB-3L SYMBOL MM INCH MM SYMBOL INCH MIN NOM MAX MIN NOM MAX A 4.40 4.57 4.70 0.173 0.180 0.185 Øp1 MIN NOM MAX MIN NOM MAX 1.40 1.50 1.60 0.055 0.059 A1 1.27 1.30 1.33 0.050 0.051 0.052 e 0.063 A2 2.35 2.40 2.50 0.093 0.094 0.098 e1 b 0.77 - 0.90 0.030 - 0.035 H1 6.40 6.50 6.60 0.252 0.256 0.260 b2 1.23 - 1.36 0.048 - 0.054 L 12.75 - 13.17 0.502 - 0.519 - - 3.95 - - 0.156 2.54BSC 0.1BSC 5.08BSC 0.2BSC C 0.48 0.50 0.52 0.019 0.020 0.021 L1 D 15.40 15.60 15.80 0.606 0.614 0.622 L2 D1 9.00 9.10 9.20 0.354 0.358 0.362 Øp 3.57 3.60 3.63 0.141 0.142 0.143 DEP 0.05 0.10 0.20 0.002 0.004 0.008 Q 2.73 2.80 2.87 0.107 0.110 0.113 E 9.70 9.90 10.10 0.382 0.389 0.398 θ1 5° 7° 9° 5° 7° 9° E1 - 8.70 - - 0.343 - θ2 1° 3° 5° 1° 3° 5° E2 9.80 10.00 10.20 0.386 0.394 0.401 2.50REF. 0.098REF. ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright Ruichips Semiconductor Co., Ltd Rev. A –SEP., 2010 8 www.ruichips.com RU140N10 TO-263-2L SYMBOL MM INCH MM MIN NOM MAX MIN NOM MAX SYMBOL INCH MIN NOM MAX MIN NOM MAX A 4.40 4.57 4.70 0.173 0.180 0.185 L 2.00 2.30 2.60 0.079 0.090 0.102 A1 0 0.10 0.25 0 0.004 0.010 L3 1.17 1.27 1.40 0.046 0.050 0.055 A2 2.59 2.69 2.79 0.102 0.106 0.110 L1 - - 1.70 - - 0.067 b 0.77 - 0.90 0.030 - 0.035 L4 0.25BSC 0.01BSC b1 1.23 - 1.36 0.048 - 0.052 L2 2.50REF. 0.098REF. c 0.34 - 0.47 0.013 - 0.019 θ 0° - 8° 0° - 8° C1 1.22 - 1.32 0.048 - 0.052 θ1 5° 7° 9° 5° 7° 9° D 8.60 8.70 8.80 0.338 0.343 0.346 θ2 1° 3° 5° 1° 3° 5° E 10.00 10.16 10.26 0.394 0.4 0.404 DEP 0.05 0.10 0.20 0.002 0.004 0.008 Øp1 1.40 1.50 1.60 0.055 0.059 0.063 15.50 0.579 e H 2.54BSC 14.70 15.10 0.1BSC 0.594 0.610 ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright Ruichips Semiconductor Co., Ltd Rev. A –SEP., 2010 9 www.ruichips.com RU140N10 TO-247 SYMBOL MM INCH MM MIN MAX MIN MAX SYMBOL MIN INCH MAX MAX A 4.850 5.150 0,191 0.200 E2 A1 2.200 2.600 0.087 0.102 L 40.900 41.300 1.610 1.626 B 1.000 1.400 0.039 0.055 L1 24.800 25.100 0.976 0.988 b1 2.800 3.200 0.110 0.126 L2 20.300 20.600 0.799 0.811 b2 1.800 2.200 0.071 0.087 Φ 7.100 7.300 0.280 0.287 c 0.500 0.700 0.020 0.028 e c1 1.900 2.100 0.075 0.083 H D 15.450 15.750 0.608 0.620 h E1 3.500 REF. 3.600 REF MIN 5.450 TYP 5.980 REF. 0.000 0.300 0.142 REF 0.215 TYP 0.235 REF. 0.000 0.012 0.138 REF. ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright Ruichips Semiconductor Co., Ltd Rev. A –SEP., 2010 10 www.ruichips.com RU140N10 Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Investor Relations Contacts: [email protected] Marcom Contact: [email protected] Editorial Contact: [email protected] HR Contact: [email protected] Legal Contact: [email protected] Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: [email protected] Copyright Ruichips Semiconductor Co., Ltd Rev. A –SEP., 2010 11 www.ruichips.com