RU1H100R N-Channel Advanced Power MOSFET Features Pin Description • 100V/75A RDS (ON)=11mΩ(Typ.) @ VGS=10V • Ultra Low On-Resistance • Extremely high dv/dt capability • Fast Switching and Fully Avalanche Rated TO-220 • 100% avalanche tested Applications ·High Speed Power Switching ·Uninterruptible Power Supply N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 100 VGSS Gate-Source Voltage ±25 Maximum Junction Temperature 175 °C -55 to 175 °C TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current ① TC=25°C 75 TC=25°C 300 TC=25°C 75 59 V A Mounted on Large Heat Sink IDP 300µs Pulsed Drain Current Tested ID Continue Drain Current(VGS=10V) TC=100°C PD Maximum Power Dissipation TC=25°C TC=100°C RθJC Thermal Resistance -Junction to Case ② ① 150 A W 75 1.0 °C/W 196 mJ Drain-Source Avalanche Ratings ③ Avalanche Energy ,Single Pulsed EAS Storage Temperature Range -55 to 150 Copyright Ruichips Semiconductor Co., Ltd Rev.B –SEP., 2010 www.ruichips.com RU1H100R Electrical Characteristics (TA=25°C Unless Otherwise Noted) RU1H100R Symbol Parameter Test Condition Unit Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) ④ VGS=0V, IDS=250µA 100 V VDS= 100V, VGS=0V 1 TJ=85°C Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±25V, VDS=0V Drain-Source On-state Resistance VGS= 10V, IDS=40A 30 2 3 11 µA 4 V ±100 nA 15 mΩ 1.2 V Diode Characteristics VSD ④ trr Diode Forward Voltage ISD=40A, VGS=0V Reverse Recovery Time 36 ns 46 nC 1.5 Ω ISD=40A, dlSD/dt=100A/µs qrr Reverse Recovery Charge ⑤ Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS= 50V, Frequency=1.0MHz 3450 265 pF 148 19 VDD=50V,IDS= 40A, VGEN= 10V,RG=5.6Ω Turn-off Fall Time 86 ns 55 69 ⑤ Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: 85 VDS=80V, VGS= 10V, IDS=40A 20 nC 35 Calculated continuous current based on maximum allowable junction temperature. Limited by bonding wire. Pulse width limited by safe operating area. Limited by TJmax, IAS =28A, VDD = 48V, RG = 47Ω , Starting TJ = 25°C. Pulse test ; Pulse width≤300µs, duty cycle≤2%. Guaranteed by design, not subject to production testing. Copyright Ruichips Semiconductor Co., Ltd Rev. B –SEP., 2010 2 www.ruichips.com RU1H100R Typical Characteristics Drain Current Ptot-Power(W) ID - Drain Current (A) Power Dissipation Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Thermal Transient Impedance ID - Drain Current (A) Normalized Effective Transient Safe Operation Area VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. B –SEP., 2010 Square Wave Pulse Duration (sec) 3 www.ruichips.com RU1H100R Typical Characteristics Drain-Source On Resistance ID - Drain Current (A) RDS(ON) - On Resistance (mΩ) Output Characteristics VDS - Drain-Source Voltage (V) ID - Drain Current (A) Normalized Gate Threshold Voltage RDS(ON) - On - Resistance (mΩ) Normalized Gate-Source Voltage (V) Drain-Source On Resistance VGS - Gate - Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. B –SEP., 2010 Tj - Junction Temperature (°C) 4 www.ruichips.com RU1H100R Typical Characteristics Source-Drain Diode Forward IS - Source Current (A) Normalized On Resistance Drain-Source On Resistance Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V) Gate Charge C - Capacitance (pF) VGS - Gate-Source Voltage (V) Capacitance VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. B –SEP., 2010 QG - Gate Charge (nC) 5 www.ruichips.com RU1H100R Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Copyright Ruichips Semiconductor Co., Ltd Rev. B –SEP., 2010 6 www.ruichips.com RU1H100R Ordering and Marking Information Device Marking Package Packaging Quantity Reel Size Tape width RU1H100R RU1H100R TO-220 Tube 50 - - Copyright Ruichips Semiconductor Co., Ltd Rev. B –SEP., 2010 7 www.ruichips.com RU1H100R Package Information TO-220FB-3L SYMBOL MM INCH MM SYMBOL INCH MIN NOM MAX MIN NOM MAX A 4.40 4.57 4.70 0.173 0.180 0.185 Øp1 MIN NOM MAX MIN NOM MAX 1.40 1.50 1.60 0.055 0.059 A1 1.27 1.30 1.33 0.050 0.051 0.052 e 0.063 A2 2.35 2.40 2.50 0.093 0.094 0.098 e1 b 0.77 - 0.90 0.030 - 0.035 H1 6.40 6.50 6.60 0.252 0.256 0.260 b2 1.23 - 1.36 0.048 - 0.054 L 12.75 - 13.17 0.502 - 0.519 - - 3.95 - - 0.156 2.54BSC 0.1BSC 5.08BSC 0.2BSC C 0.48 0.50 0.52 0.019 0.020 0.021 L1 D 15.40 15.60 15.80 0.606 0.614 0.622 L2 D1 9.00 9.10 9.20 0.354 0.358 0.362 Øp 3.57 3.60 3.63 0.141 0.142 0.143 DEP 0.05 0.10 0.20 0.002 0.004 0.008 Q 2.73 2.80 2.87 0.107 0.110 0.113 E 9.70 9.90 10.10 0.382 0.389 0.398 θ1 5° 7° 9° 5° 7° 9° E1 - 8.70 - - 0.343 - θ2 1° 3° 5° 1° 3° 5° E2 9.80 10.00 10.20 0.386 0.394 0.401 2.50REF. 0.098REF. ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright Ruichips Semiconductor Co., Ltd Rev. B –SEP., 2010 8 www.ruichips.com RU1H100R Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Investor Relations Contacts: [email protected] Marcom Contact: [email protected] Editorial Contact: [email protected] HR Contact: [email protected] Legal Contact: [email protected] Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: [email protected] Copyright Ruichips Semiconductor Co., Ltd Rev. B –SEP., 2010 9 www.ruichips.com