RUICHIPS RU3560L

RU3560L
N-Channel Advanced Power MOSFET
MOSFET
Features
Pin Description
• 40V/50A,
RDS (ON) =13mΩ(tpy.)@VGS=10V
RDS (ON) =18mΩ(tpy.)@VGS=4.5V
• Super High Dense Cell Design
• Reliable and Rugged
• Fast Switching and Fully Avalanche Rated
TO252
• Lead Free and Green Devices Available
(RoHS Compliant)
Applications
• Low Voltage Inverter Applications
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
40
VGSS
Gate-Source Voltage
±20
Maximum Junction Temperature
175
°C
-55 to 175
°C
TC=25°C
50
A
TC=25°C
200
TC=25°C
50
TC=100°C
40
TC=25°C
50
TC=100°C
25
TJ
TSTG
IS
Storage Temperature Range
Diode Continuous Forward Current
V
Mounted on Large Heat Sink
IDP
300μs Pulse Drain Current Tested
ID
Continuous Drain Current
PD
RθJC
Maximum Power Dissipation
Thermal Resistance-Junction to Case
①
A
②
A
W
3
°C/W
100
mJ
Drain-Source Avalanche Ratings
EAS
③
Avalanche Energy, Single Pulsed
Copyright Ruichips Semiconductor Co., Ltd
Rev. A– FEB., 2011
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RU3560L
Electrical Characteristics
Symbol
(TA=25°C Unless Otherwise Noted)
Parameter
Test Condition
RU3560L
Min.
Typ.
Max.
Unit
Static Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VGS(th)
IGSS
RDS(ON)
VGS=0V, IDS=250µA
VDS= 40V, VGS=0V
1
TJ=85°C
Gate Threshold Voltage
VDS=VGS, IDS=250µA
Gate Leakage Current
VGS=±20V, VDS=0V
④
V
40
30
1.5
2
µA
2.7
V
±100
nA
VGS= 10V, IDS=25A
13
16
mΩ
VGS= 4.5V, IDS=20A
18
22
mΩ
1.2
V
Drain-Source On-state Resistance
Diode Characteristics
VSD
④
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ISD=25A, VGS=0V
14
ns
32
nC
VGS=0V,VDS=0V,F=1MHz
1.2
Ω
VGS=0V,
VDS=20V,
Frequency=1.0MHz
980
ISD=25A, dlSD/dt=100A/µs
⑤
Dynamic Characteristics
RG
Gate Resistance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(ON)
Turn-on Delay Time
tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
tf
pF
160
80
6
VDD=20V, RL=15Ω,
IDS=25A, VGEN= 10V,
RG=6Ω
Turn-off Fall Time
10
ns
24
5
⑤
Gate Charge Characteristics
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Notes:
18
VDS=20V, VGS= 10V,
IDS=25A
2.5
23
nC
5
Pulse width limited by safe operating area.
Calculated continuous current based on maximum allowable junction temperature. Current limited by
bond wire.
Limited by TJmax, IAS =20A, VDD = 30V, RG = 50Ω , Starting TJ = 25°C.
Pulse test ; Pulse width≤300µs, duty cycle≤2%.
Guaranteed by design, not subject to production testing.
Copyright Ruichips Semiconductor Co., Ltd
Rev. A– FEB., 2011
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RU3560L
Typical Characteristics
Drain Current
Ptot - Power (W)
ID - Drain Current (A)
Power Dissipation
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
ID - Drain Current (A)
Normalized Effective Transient
Thermal Transient Impedance
VDS - Drain-Source Voltage (V)
Copyright Ruichips Semiconductor Co., Ltd
Rev. A– FEB., 2011
Square Wave Pulse Duration (sec)
3
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RU3560L
Typical Characteristics
Drain-Source On Resistance
ID - Drain Current (A)
RDS(ON) - On Resistance (mΩ)
Output Characteristics
VDS - Drain-Source Voltage (V)
ID - Drain Current (A)
Gate Threshold Voltage
RDS(ON) - On - Resistance (m)
Normalized Threshold Voltage
Drain-Source On Resistance
VGS - Gate-Source Voltage (V)
Copyright Ruichips Semiconductor Co., Ltd
Rev. A– FEB., 2011
Tj - Junction Temperature (°C)
4
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RU3560L
Typical Characteristics
Source-Drain Diode Forward
IS - Source Current (A)
Normalized On Resistance
Drain-Source On Resistance
Tj - Junction Temperature (°C)
VSD - Source-Drain Voltage (V)
Gate Charge
C - Capacitance (pF)
VGS - Gate-Source Voltage (V)
Capacitance
VDS - Drain-Source Voltage (V)
Copyright Ruichips Semiconductor Co., Ltd
Rev. A– FEB., 2011
QG - Gate Charge (nC)
5
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RU3560L
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
Copyright Ruichips Semiconductor Co., Ltd
Rev. A– FEB., 2011
6
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RU3560L
Ordering and Marking Information
RU3560
Package (Available)
L : TO252
Operating Temperature Range
C : -55 to 150 ºC
Assembly Material
G : Green & Lead Free
Packaging
T : TUBE
TR : Tape & Reel
Copyright Ruichips Semiconductor Co., Ltd
Rev. A– FEB., 2011
7
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RU3560L
Package Information
TO252-2L
SYMBOL
MM
INCH
MM
SYMBOL
MIN
MAX
MIN
MAX
A
2.200
2.400
0.087
0.094
L
A1
0.000
0.127
0.000
0.005
L1
INCH
MIN
MAX
MIN
MAX
9.800
10.400
0.386
0.409
2.900 REF.
b
0.660
0.860
0.026
0.034
L2
C
0.460
0.580
0.018
0.023
L3
D
6.500
6.700
0.256
0.264
L4
0.600
1.000
0.024
0.039
D1
5.100
5.460
0.201
0.215
Φ
1.100
1.300
0.043
0.051
θ
0°
8°
0°
8°
0.000
0.300
0.000
0.012
D2
4.830 REF.
0.190 REF.
E
6.000
6.200
0.236
0.244
h
e
2.186
2.386
0.086
0.094
V
1.400
1.700
0.114 REF.
1.600 REF.
5.350 REF.
0.055
0.067
0.063REF.
0.211 REF.
ALL DIMENSIONS REFER TO JEDEC STANDARD
DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS
Copyright Ruichips Semiconductor Co., Ltd
Rev. A– FEB., 2011
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RU3560L
Customer Service
Worldwide Sales and Service:
[email protected]
Technical Support:
[email protected]
Investor Relations Contacts:
[email protected]
Marcom Contact:
[email protected]
Editorial Contact:
[email protected]
HR Contact:
[email protected]
Legal Contact:
[email protected]
Shen Zhen RUICHIPS Semiconductor CO., LTD
Room 501, the 5floor An Tong Industrial Building,
NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA
TEL: (86-755) 8311-5334
FAX: (86-755) 8311-4278
E-mail: [email protected]
Copyright Ruichips Semiconductor Co., Ltd
Rev. A– FEB., 2011
9
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