RU8099 N-Channel Advanced Power MOSFET Features Pin Description • 90V/90A RDS (ON)=8mΩ(Typ.) @ VGS=10V • Ultra Low On-Resistance TO-220 TO-220F TO-247 TO-263 • Extremely high dv/dt capability • Fast Switching and Fully Avalanche Rated • 100% avalanche tested Applications ·High efficiency switching mode power supply N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 90 VGSS Gate-Source Voltage ±25 Maximum Junction Temperature 175 °C -55 to 175 °C TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V ① TC=25°C 90 TC=25°C 360 TC=25°C 90 65 A Mounted on Large Heat Sink IDP 300µs Pulsed Drain Current Tested ID Continue Drain Current PD Maximum Power Dissipation TC=100°C TC=25°C TC=100°C ① A 175 W 86 RθJC Thermal Resistance -Junction to Case 0.86 RθJA Thermal Resistance-Junction to Ambient 62.5 °C/W Drain-Source Avalanche Ratings ② Avalanche Energy ,Single Pulsed EAS Storage Temperature Range 1306 -55 to 150 Copyright Ruichips Semiconductor Co., Ltd Rev.A –SEP., 2010 www.ruichips.com mJ RU8099 Electrical Characteristics (TA=25°C Unless Otherwise Noted) RU8099 Symbol Parameter Test Condition Unit Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS=0V, IDS=250µA 90 V VDS= 90V, VGS=0V 1 TJ=85°C VGS(th) IGSS RDS(ON) ③ Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±25V, VDS=0V Drain-Source On-state Resistance VGS= 10V, IDS=40A 30 2 3 8 µA 4 V ±100 nA 10 mΩ 1.2 V Diode Characteristics VSD ③ Diode Forward Voltage ISD=40 A, VGS=0V Reverse Recovery Time trr 90 ns 200 nC 1.5 Ω ISD=40A, dlSD/dt=100A/µs Reverse Recovery Charge qrr Dynamic Characteristics ④ RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance 210 td(ON) Turn-on Delay Time 25 tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS= 25V, Frequency=1.0MHz VDD=40V,IDS= 40A, VGEN= 10V,RG=2.5Ω Turn-off Fall Time Gate Charge Characteristics pF 810 205 ns 150 130 ④ Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: 2550 85 VDS=72V, VGS= 10V, IDS=80A 19 120 nC 30 ①Current limited by package. ② IAS =75A, VDD = 50V, RG = 47Ω , Starting TJ = 25°C ③Pulse test ; Pulse width≤400µs, duty cycle≤2%. ④Guaranteed by design, not subject to production testing. Copyright Ruichips Semiconductor Co., Ltd Rev. A –SEP., 2010 2 www.ruichips.com RU8099 Typical Characteristics Drain Current Ptot-Power(W) ID - Drain Current (A) Power Dissipation Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Thermal Transient Impedance ID - Drain Current (A) Normalized Effective Transient Safe Operation Area VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. A –SEP., 2010 Square Wave Pulse Duration (sec) 3 www.ruichips.com RU8099 Typical Characteristics Drain-Source On Resistance ID - Drain Current (A) RDS(ON) - On Resistance (mΩ) Output Characteristics VDS - Drain-Source Voltage (V) ID - Drain Current (A) Normalized Gate Threshold Voltage RDS(ON) - On - Resistance (mΩ) Normalized Gate-Source Voltage (V) Drain-Source On Resistance VGS - Gate - Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. A –SEP., 2010 Tj - Junction Temperature (°C) 4 www.ruichips.com RU8099 Typical Characteristics Source-Drain Diode Forward IS - Source Current (A) Normalized On Resistance Drain-Source On Resistance Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V) Gate Charge C - Capacitance (pF) VGS - Gate-Source Voltage (V) Capacitance VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. A –SEP., 2010 QG - Gate Charge (nC) 5 www.ruichips.com RU8099 Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Copyright Ruichips Semiconductor Co., Ltd Rev. A –SEP., 2010 6 www.ruichips.com RU8099 Ordering and Marking Information RU8099 Package (Available) R : TO-220; S: TO-263 ; Q: TO-247 Operating Temperature Range C : -55 to 175 ºC Assembly Material G : Green & Lead Free Device Packaging T : TUBE TR : Tape & Reel Copyright Ruichips Semiconductor Co., Ltd Rev. A –SEP., 2010 7 www.ruichips.com RU8099 Package Information TO-220FB-3L SYMBOL MM INCH MM SYMBOL INCH MIN NOM MAX MIN NOM MAX A 4.40 4.57 4.70 0.173 0.180 0.185 A1 1.27 1.30 1.33 0.050 0.051 0.052 e 2.54BSC A2 2.35 2.40 2.50 0.093 0.094 0.098 e1 5.08BSC b 0.77 - 0.90 0.030 - 0.035 H1 6.40 6.50 6.60 0.252 0.256 0.260 b2 1.23 - 1.36 0.048 - 0.054 L 12.75 - 13.17 0.502 - 0.519 C 0.48 0.50 0.52 0.019 0.020 0.021 L1 - - 3.95 - - 0.156 D 15.40 15.60 15.80 0.606 0.614 0.622 L2 Øp1 MIN NOM MAX MIN NOM MAX 1.40 1.50 1.60 0.055 0.059 0.063 0.1BSC 0.2BSC 2.50REF. 0.098REF. D1 9.00 9.10 9.20 0.354 0.358 0.362 Øp 3.57 3.60 3.63 0.141 0.142 0.143 DEP 0.05 0.10 0.20 0.002 0.004 0.008 Q 2.73 2.80 2.87 0.107 0.110 0.113 E 9.70 9.90 10.10 0.382 0.389 0.398 θ1 5° 7° 9° 5° 7° 9° θ2 1° 3° 5° 1° 3° 5° E1 - 8.70 - - 0.343 - E2 9.80 10.00 10.20 0.386 0.394 0.401 ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright Ruichips Semiconductor Co., Ltd Rev. A –SEP., 2010 8 www.ruichips.com RU8099 TO-263-2L SYMBOL MM INCH MM MIN NOM MAX MIN NOM MAX SYMBOL INCH MIN NOM MAX MIN NOM MAX A 4.40 4.57 4.70 0.173 0.180 0.185 L 2.00 2.30 2.60 0.079 0.090 0.102 A1 0 0.10 0.25 0 0.004 0.010 L3 1.17 1.27 1.40 0.046 0.050 0.055 A2 2.59 2.69 2.79 0.102 0.106 0.110 L1 - - 1.70 - - 0.067 b 0.77 - 0.90 0.030 - 0.035 L4 0.25BSC 0.01BSC b1 1.23 - 1.36 0.048 - 0.052 L2 2.50REF. 0.098REF. c 0.34 - 0.47 0.013 - 0.019 θ 0° - 8° 0° - 8° C1 1.22 - 1.32 0.048 - 0.052 θ1 5° 7° 9° 5° 7° 9° D 8.60 8.70 8.80 0.338 0.343 0.346 θ2 1° 3° 5° 1° 3° 5° E 10.00 10.16 10.26 0.394 0.4 0.404 DEP 0.05 0.10 0.20 0.002 0.004 0.008 Øp1 1.40 1.50 1.60 0.055 0.059 0.063 15.50 0.579 e H 2.54BSC 14.70 15.10 0.1BSC 0.594 0.610 ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright Ruichips Semiconductor Co., Ltd Rev. A –SEP., 2010 9 www.ruichips.com RU8099 TO-247 SYMBOL MM INCH MM MIN MAX MIN MAX SYMBOL MIN INCH MAX MAX A 4.850 5.150 0,191 0.200 E2 A1 2.200 2.600 0.087 0.102 L 40.900 41.300 1.610 1.626 B 1.000 1.400 0.039 0.055 L1 24.800 25.100 0.976 0.988 b1 2.800 3.200 0.110 0.126 L2 20.300 20.600 0.799 0.811 b2 1.800 2.200 0.071 0.087 Φ 7.100 7.300 0.280 0.287 c 0.500 0.700 0.020 0.028 e c1 1.900 2.100 0.075 0.083 H D 15.450 15.750 0.608 0.620 h E1 3.500 REF. 3.600 REF MIN 5.450 TYP 5.980 REF. 0.000 0.300 0.142 REF 0.215 TYP 0.235 REF. 0.000 0.012 0.138 REF. ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright Ruichips Semiconductor Co., Ltd Rev. A –SEP., 2010 10 www.ruichips.com RU8099 Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Investor Relations Contacts: [email protected] Marcom Contact: [email protected] Editorial Contact: [email protected] HR Contact: [email protected] Legal Contact: [email protected] Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: [email protected] Copyright Ruichips Semiconductor Co., Ltd Rev. A –SEP., 2010 11 www.ruichips.com