SANKEN 2SK3711_07

60V N -ch MOSFET
2SK3711
December 2005
■Package—TO3P
■Features
• Low on-resistance
• Built-in gate protection diode
• Avalanche energy capability guaranteed
■Applications
• Electric power steering
• High current switching
■Equivalent circuit
D (2)
G (1)
S (3)
Absolute maximum ratings
(Ta=25°C)
Characteristic
Symbol
Rating
Unit
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS
±20
V
Continuous Drain Current
ID
±70A
A
Pulsed Drain Current
ID (pulse) *1
±140A
A
Maximum Power Dissipation
PD
130 (Tc=25°C)
W
Single Pulse Avalanche Energy
EAS *2
468
mJ
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
-55 to 150
°C
*1 PW≤100μs, duty cycle≤1%
*2 VDD=20V, L=1mH, ILp=25A, unclamped, RG=50Ω. See Fig.1
.
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T02-002EA-051124
60V N -ch MOSFET
2SK3711
December 2005
Electrical characteristics
(Ta=25°C)
Limits
Unit
Characteristic
Symbol
Test Conditions
Drain to Source breakdown Voltage
V(BR)DSS
ID=100μA,VGS=0V
Gate to Source Leakage Current
IGSS
VGS=±15V
±10
μA
Drain to Source Leakage Current
IDSS
VDS=60V, VGS=0V
100
μA
Gate Threshold Voltage
VTH
VDS=10V, ID=1mA
2.0
3.0
4.0
V
Forward Transconductance
Re(Yfs)
VDS=10V, ID=35A
30
80
Static Drain to Source On-Resistance
RDS(ON)
ID=35A, VGS=10V
Input Capacitance
Ciss
VDS=10V
8000
Output Capacitance
Coss
VGS=0V
1250
Reverse Transfer Capacitance
Crss
f=1MHz
1000
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain Diode Forward Voltage
VSD
Source-Drain Diode Recovery Time
trr
ID=35A, VDD≈20V
RL=0.57Ω,
MIN
TYP
MAX
60
V
5.0
S
6.0
pF
110
100
VGS=10V
Rg=22Ω
Refer to Fig. 2
ISD=50A,VGS=0V
ISD=25A,
di/dt=50A/μs
mΩ
ns
440
160
0.9
100
1.5
V
ns
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60V N -ch MOSFET
2SK3711
December 2005
Characteristic Curves
(Tc=25°C)
2SK3711
RDS(ON)-Tc Characteristic (typical)
2SK3711
ID-VDS Characteristic (typical)
12.0
80
Ta=25℃
VGS=10V
VGS=10V
ID=35A
70
10.0
VGS=5.0V
60
VGS=4.5V
8.0
RDS(ON) (mΩ)
ID (A)
50
40
30
6.0
4.0
20
VGS=4.0V
2.0
10
0.0
0
0.0
0.5
1.0
VDS (V)
1.5
-100
2.0
-50
0
50
Tc (℃)
100
150
200
2SK3711
RDS(ON)-ID Characteristic (typical)
2SK3711
PD-TC Characteristic
140
7.0
∞ Fin
120
Ta=25℃
VGS=10V
6.0
100
RDS(ON) (mΩ)
5.0
PD (W)
80
60
4.0
3.0
40
2.0
20
1.0
0.0
0
0
50
100
0
150
10
20
Tc (℃)
2SK3711
ID-VGS Characteristic (typical)
30
40
ID (A)
50
60
70
80
2SK3711
VDS-VGS Characteristic (typical)
80
VDS=10V
1.0
70
0.8
60
50
VDS (V)
ID (A)
0.6
40
Tc=-55℃
0.4
Tc=25℃
ID=70A
30
Tc=150℃
20
ID=35A
0.2
10
0.0
0
0
0.0
1.0
2.0
3.0
4.0
VGS (V)
5.0
6.0
5
7.0
10
VGS (V)
15
20
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60V N -ch MOSFET
2SK3711
December 2005
Characteristic Curves
(Tc=25°C)
2SK3711
SAFE OPERATING AREA
2SK3711
capacitance-VDS Characteristic (typical)
2SK3711
IDR-VSD Characteristic (typical)
1000
80
100000
Ta=25℃
VGS=0V
f=1MHz
70
ID(pu lse ) m ax
10000
Ciss
RDS (o n ) LIM IT ED
40
Tc=150℃
ID [A]
capacitance (pF)
50
1 m s ( 1 sh o t )
1 0 m s (1 sh o t )
10
30
Tc=25℃
1000
Tc=-55℃
Coss
1
20
Crss
10
0.1
0
0.0
0.2
0.4
0.6
0.8
VSD (V)
1.0
1.2
1.4
0.1
100
0
10
20
30
40
50
1
10
100
VDS [V]
VDS (V)
2SK3711
Transient Thermal Resistance vs Pulse Width
10
1
θj-c (℃/W)
IDR (A)
50 0 μs(1 sh o t )
100
60
0.1
0.01
0.0001
0.001
0.01
0.1
PW (sec)
1
10
100
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60V N -ch MOSFET
2SK3711
December 2005
Fig.1 Unclamped Inductive Test Method
EAS=
L
V(BR)DSS
1
•L•ILP2•
2
V(BR)DSS - VDD
V(BR)DSS
IL
VDS
ILp
RG
VDS
VDD
VGS
IL
VDD
0V
(a) Test Circuit
Fig.2
(b) Waveforms
Switching Time Test Method
RL
VDD≈20V
ID
ID=35A
VDS
RG
RL=0.57Ω
VDD
VGS
VGS=10V
RG=22Ω
0V
P.W.=10μs
Duty cycle≦1%
(a) Test Circuit
90%
VGS
10%
90%
VDS
10%
td(on)
tr
td(off)
ton
tf
toff
(b) Waveforms
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60V N -ch MOSFET
2SK3711
December 2005
External Dimensions
MT100 (TO3P )
15.6 ±0.3
5.0
MAX
14.0
±0.3
2.1
MAX
13.6
±0.2
9.6
3.2
±0.2
φ±0.1
1.7
+0.2
-0.3
15.8 ±0.2
0.6
1.0
+0.2
-0.1
+0.2
-0.1
2
+0.2
-0.1
3
+0.2
-0.1
2
5.45 ±0.1
(1)
+0.2
-0.1
5.45 ±0.1
(2)
(3)
Mass: Approx. 6.0g
(1) Gate
(2) Drain (Back Side)
(3) Source
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60V N -ch MOSFET
2SK3711
December 2005
<Worldwide Contacts>
Asia Pacific
China
Sanken Electric Hong Kong Co., Ltd.
Suite 1026 Ocean Centre, Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: 852-2735-5262
Fax: 852-2735-5494
Sanken Electric (Shanghai) Co., Ltd.
Room3202, Maxdo Centre, Xingyi Road 8, Changning district, Shanghai, China
Tel: 86-21-5208-1177
Fax: 86-21-5208-1757
Taiwan Sanken Electric Co., Ltd.
Room 1801, 18th Floor, 88 Jung Shiau East Road, Sec. 2, Taipei 100, Taiwan R.O.C.
Tel: 886-2-2356-8161
Fax: 886-2-2356-8261
India
Saket Devices Pvt. Ltd.
Office No.13, First Floor, Bandal - Dhankude Plaza, Near PMT Depot, Paud Road, Kothrud, Pune - 411 038, India
Tel: 91-20-5621-2340
91-20-2528-5449
Fax: 91-20-2528-5459
Japan
Sanken Electric Co., Ltd. Overseas Sales Headquaters
Metropolitan Plaza Bldg. 1-11-1 Nishi-Ikebukuro, Toshima-ku, Tokyo 171-0021, Japan
Tel: 81-3-3986-6164
Fax: 81-3-3986-8637
Korea
Sanken Electric Korea Co., Ltd.
Mirae Asset Life Bldg. 6F, 168 Kongduk-dong, Mapo-ku, Seoul, 121-705, Korea
Tel: 82-2-714-3700
Fax: 82-2-3272-2145
Singapore
Sanken Electric Singapore Pte. Ltd.
150 Beach Road, #14-03 The Gateway West, Singapore 189720
Tel: 65-6291-4755
Fax: 65-6297-1744
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60V N -ch MOSFET
2SK3711
December 2005
Europe
United Kingdom
Sanken Power Systems (UK) Limited
Pencoed Technology Park, Pencoed, Bridgend CF35 5HY. UK
Tel: 44-1656-869-100
Fax: 44-1656-869-162
North America
United States
Allegro MicroSystems, Inc.
115 Northeast Cutoff, Worcester, Massachusetts 01606, U.S.A.
Tel: 1-508-853-5000
Fax: 1-508-853-3353
Allegro MicroSystems, Inc. (Southern California)
14 Hughes Street, Suite B105, Irvine, CA 92618
Tel: 1-949-460-2003
Fax: 1-949-460-7837
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60V N -ch MOSFET
2SK3711
December 2005
CAUTION / WARNING
●The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility
is assumed for inaccuracies.
● Sanken reserves the right to make changes without further notice to any products herein in the interest of improvements
in the performance, reliability, or manufacturability of its products.
Before placing an order, Sanken advises its customers to obtain the latest version of the relevant information to verify that
the information being relied upon is current.
● Application and operation examples described in this catalog are quoted for the sole purpose of reference for the use of
the products herein and Sanken can assume no responsibility for any infringement of industrial property rights,
intellectual property rights or any other rights of Sanken or any third party which may result from its use.
● When using the products herein, the applicability and suitability of such products for the intended purpose or object shall
be reviewed at the users’ responsibility.
● Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure nd defect of
semiconductor products at a certain rate is inevitable. Users of Sanken products are requested to take, at their own risk,
preventative measures including safety design of the equipment or systems against any possible injury, death, fires or
damages to the society due to device failure or malfunction.
● Sanken products listed in this catalog are designed and intended for the use as components in general purpose electronic
equipment or apparatus (home appliances, office equipment, telecommunication equipment, measuring equipment, etc.).
Before placing an order, the user’s written consent to the specifications is requested.
When considering the use of Sanken products in the applications where higher reliability is required (transportation
equipment and its control systems, traffic signal control systems or equipment, fire/crime alarm systems, various safety
devices, etc.), please contact your nearest Sanken sales representative to discuss and obtain written confirmation of your
specifications. The use of Sanken products without the written consent of Sanken in the applications where extremely
high reliability is required (aerospace equipment, nuclear power control systems, life support systems, etc.) is strictly
prohibited.
● Anti radioactive ray design is not considered for the products listed herein.
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