SANKEN FKP250A

N-Channel MOS FET
FKP250A
■Features
June, 2007
■Package---FM100 (TO-3P Full Mold)
●Low on-resistance
●Low input capacitance
●Avalanche energy capability guaranteed
■Applications
●PDP driving
●High speed switching
■Equivalent circuit
D (2)
G (1)
S (3)
■Absolute maximum ratings
(Ta=25°C）
Parameter
Symbol
Rating
Unit
Drain to Source Voltage
VDSS
250
V
Gate to Source Voltage
VGSS
±30
V
Continuous Drain Current
ID
±50A
A
Pulsed Drain Current
ID(pulse) *1
±200A
A
Maximum Power Dissipation
PD
85 (Tc=25°C)
W
Single Pulse Avalanche Energy
EAS *2
400
mJ
Avalanche Current
IAS
50
A
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
－55 to 150
°C
*1 PW≤100μs，duty cycle≤１%
*2 VDD=20V, L=300μH, ILp=50A, unclamped, RG=50Ω, See Fig.1
Sanken Electric Co., Ltd.
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T02-008EA-070531
N-Channel MOS FET
FKP250A
June, 2007
Electrical characteristics
(Ta=25°C）
Unit
Symbol
Drain to Source breakdown Voltage
V(BR)DSS
Gate to Source Leakage Current
IGSS
VGS=±30V
±100
nA
Drain to Source Leakage Current
IDSS
VDS=250V, VGS=0V
100
μA
Gate Threshold Voltage
VTH
VDS=10V, ID=1mA
3.0
4.5
V
Forward Transconductance
Re(Yfs)
VDS=10V, ID=25A
30
Static Drain to Source On-Resistance
RDS(on)
ID=25A, VGS=10V
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-On Delay Time
td(on)
Rise Time
tr
Test Conditions
Limits
Parameter
ID=100μA,VGS=0V
VDS=25V
VGS=0V
f=1MHz
MIN.
TYP.
250
V
42
37
S
43
mΩ
3800
pF
630
210
40
ID=25A, VDD≈125V
RL=5Ω, VGS=10V
110
RG=5Ω
160
ns
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain Diode Forward Voltage
VSD
ISD=50A,VGS=0V
1.0
Gate Threshold Voltage Temp.
ΔVTH
/ΔTch
VDS=10V, ID=1mA
-11
Coefficient
MAX.
See Fig.2
90
1.5
V
mV/°C
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N-Channel MOS FET
FKP250A
June, 2007
Characteristic Curves
ID-VDS Characteristics (typical)
ID-VGS Characteristics (typical)
VDS=10V
VGS=10V
50
(Tc=25℃)
50
6.0V
40
40
5.5V
30
ID (A)
ID (A)
30
20
20
5.0V
10
125℃
25℃
10
Tc=-55℃
4.5V
0
0
0
2
4
6
8
10
0
2
4
VDS (V)
6
8
10
VGS (V)
VDS-VGS Characteristics (typical)
RDS(ON)- ID Ch aracte ristic s (typic al)
5
VGS=10V
60
4
50
VDS (V)
30
3
2
ID=50A
20
1
ID=25A
10
0
0
0
10
20
30
40
1
50
10
VGS (V)
ID (A)
RDS(ON)-Tc Ch aracte ristic s ( typical)
100
100
ID=25A
VGS=10V
90
80
70
RDS(on) (mΩ)
RDS(on) (mΩ)
40
60
50
40
30
20
10
0
-100
-50
0
50
100
150
Tc (℃)
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T02-008EA-070531
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N-Channel MOS FET
FKP250A
June, 2007
Characteristic Curves
(Tc=25℃)
Capacitance-VDS Characteristics (typical)
Re(yfs)-ID Characteristics (typical)
f=1MHz
VGS=0V
VDS=10V
10000
100
Ciss
Capacitance (pF)
10
Re(yfs) (S)
Tc=-55℃
25℃
1
125℃
1000
Coss
Crss
100
0.1
0.01
0.01
10
0.1
1
ID (A)
10
0
100
10
20
30
40
50
VDS (V)
IDR-VSD Characteristics (typical)
SAFE OPERATING AREA
1000
50
ID(pulse) max
40
100
30
100μs(1shot)
ID max
ID [A]
IDR (A)
10
10V
20
RDS(on) LIMITED
1ms
1
VGS=0V
10
0.1
DC
0
0.0
0.5
1.0
1.5
VSD (V)
0.01
0.1
PD-Ta Characteristics
1
10
100
1000
VDS [V]
100
80
60
PD (W)
With infinite heatsink
40
20
Without heatsink
0
0
50
100
150
Ta (℃)
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T02-008EA-070531
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N-Channel MOS FET
FKP250A
June, 2007
Fig.1 Unclamped Inductive Test Method
EAS=
L
1
V(BR)DSS
·L·ILP2·
2
V(BR)DSS − VDD
V(BR)DSS
IL
VDS
ILp
RG
VDS
VDD
VGS
IL
VDD
0V
(a) Test Circuit
Fig.2
(b) Waveforms
Switching Time Test Method
RL
VDD≈125
ID=25
RL=5Ω
VGS=10V
RG=5Ω
ID
VDS
RG
VDD
VGS
0V
P.W.=10μs
Duty cycle≦1%
(a) Test Circuit
90%
VGS
10%
90%
VDS
10%
td(on)
tr
td(off)
ton
tf
toff
(b) Waveforms
Sanken Electric Co., Ltd.
T02-008EA-070531
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N-Channel MOS FET
FKP250A
June, 2007
External dimensions
FM100
(TO-3P Full Mold)
(1) Gate
(2) Drain
(1)
(2)
(3)
(3) Source
Weight Approx. 6.5g
Sanken Electric Co., Ltd.
T02-008EA-070531
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N-Channel MOS FET
FKP250A
June, 2007
<Worldwide Contacts>
Asia Pacific
China
Sanken Electric Hong Kong Co., Ltd.
Suite 1026 Ocean Centre, Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: 852-2735-5262
Fax: 852-2735-5494
Sanken Electric (Shanghai) Co., Ltd.
Room3202, Maxdo Centre, Xingyi Road 8, Changning district, Shanghai, China
Tel: 86-21-5208-1177
Fax: 86-21-5208-1757
Taiwan Sanken Electric Co., Ltd.
Room 1801, 18th Floor, 88 Jung Shiau East Road, Sec. 2, Taipei 100, Taiwan R.O.C.
Tel: 886-2-2356-8161
Fax: 886-2-2356-8261
India
Saket Devices Pvt. Ltd.
Office No.13, First Floor, Bandal - Dhankude Plaza, Near PMT Depot, Paud Road, Kothrud, Pune - 411 038, India
Tel: 91-20-5621-2340
91-20-2528-5449
Fax: 91-20-2528-5459
Japan
Sanken Electric Co., Ltd. Overseas Sales Headquaters
Metropolitan Plaza Bldg. 1-11-1 Nishi-Ikebukuro, Toshima-ku, Tokyo 171-0021, Japan
Tel: 81-3-3986-6164
Fax: 81-3-3986-8637
Korea
Sanken Electric Korea Co., Ltd.
Mirae Asset Life Bldg. 6F, 168 Kongduk-dong, Mapo-ku, Seoul, 121-705, Korea
Tel: 82-2-714-3700
Fax: 82-2-3272-2145
Singapore
Sanken Electric Singapore Pte. Ltd.
150 Beach Road, #14-03 The Gateway West, Singapore 189720
Tel: 65-6291-4755
Fax: 65-6297-1744
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N-Channel MOS FET
FKP250A
June, 2007
Europe
United Kingdom
Sanken Power Systems (UK) Limited
Pencoed Technology Park, Pencoed, Bridgend CF35 5HY. UK
Tel: 44-1656-869-100
Fax: 44-1656-869-162
North America
United States
Allegro MicroSystems, Inc.
115 Northeast Cutoff, Worcester, Massachusetts 01606, U.S.A.
Tel: 1-508-853-5000
Fax: 1-508-853-3353
Allegro MicroSystems, Inc. (Southern California)
14 Hughes Street, Suite B105, Irvine, CA 92618
Tel: 1-949-460-2003
Fax: 1-949-460-7837
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N-Channel MOS FET
FKP250A
June, 2007
CAUTION / WARNING
●The information in this publication has been carefully checked and is believed to be accurate; however, no
responsibility is assumed for inaccuracies.
● Sanken reserves the right to make changes without further notice to any products herein in the interest of
improvements in the performance, reliability, or manufacturability of its products.
Before placing an order, Sanken advises its customers to obtain the latest version of the relevant information to verify
that the information being relied upon is current.
● Application and operation examples described in this catalog are quoted for the sole purpose of reference for the use
of the products herein and Sanken can assume no responsibility for any infringement of industrial property rights,
intellectual property rights or any other rights of Sanken or any third party which may result from its use.
● When using the products herein, the applicability and suitability of such products for the intended purpose or object
shall be reviewed at the users’ responsibility.
● Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure and defect
of semiconductor products at a certain rate is inevitable. Users of Sanken products are requested to take, at their own
risk, preventative measures including safety design of the equipment or systems against any possible injury, death,
fires or damages to the society due to device failure or malfunction.
● Sanken products listed in this catalog are designed and intended for the use as components in general purpose
electronic equipment or apparatus (home appliances, office equipment, telecommunication equipment, measuring
equipment, etc.). Before placing an order, the user’s written consent to the specifications is requested.
When considering the use of Sanken products in the applications where higher reliability is required (transportation
equipment and its control systems, traffic signal control systems or equipment, fire/crime alarm systems, various
safety devices, etc.), please contact your nearest Sanken sales representative to discuss and obtain written
confirmation of your specifications. The use of Sanken products without the written consent of Sanken in the
applications where extremely high reliability is required (aerospace equipment, nuclear power control systems, life
support systems, etc.) is strictly prohibited.
● Anti radioactive ray design is not considered for the products listed herein.
● This publication shall not be reproduced in whole or in part without prior written approval from Sanken.
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1. Resell or retransfer these products/technology to any party intending to disturb international peace and security.
2. Use these products/technology yourself for activities disturbing international peace and security.
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Also, as purchaser of these products/technology, you agree to follow the procedures for the export or transfer of these
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