SDA01 PNP Darlington General purpose Absolute maximum ratings External dimensions E Electrical characteristics (Ta=25°C) Symbol Ratings Unit Symbol VCBO –60 V ICBO VCEO –60 V IEBO ••• SD (Ta=25°C) Specification min typ max Unit Conditions –10 µA VCB=–60V –3 mA VEB=–6V VEBO –6 V VCEO –60 IC –1.5 A hFE 2000 V ICP –2.5 (PW≤1ms, Du≤10%) A VCE(sat) –1.4 V IB –0.1 A VBE(sat) –2.2 V PT 3 (Ta=25°C) W Tj 150 °C Tstg –40 to +150 °C θ j–a 41.6 °C/W IC=–10mA 12000 VCE=–4V, IC=–1A IC=–1A, IB=–2mA ■Equivalent circuit diagram 2 R1 4 6 8 R2 1 3 5 15,16 7 13,14 11,12 9,10 R1: 4kΩ typ R2: 100Ω typ Characteristic curves IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) –2.5 IB=–5mA A hFE-IC Temperature Characteristics (Typical) (VCE=–4V) 10000 (VCE=–4V) 10000 –1.2m A –2mA –1.0m –2.0 5000 5000 typ A –0.8m 25 A –0.6m 1000 –0.4mA –1.0 Ta 1000 hFE –0.5mA =1 hFE IC (A) –1.5 500 °C °C 75 °C 25 C 0° –3 500 –0.3mA –0.5 100 0 0 –1 –2 –3 –4 –5 100 50 –0.03 –0.05 –6 –0.1 –0.5 VCE (V) VCE(sat)-IC Temperature Characteristics (Typical) –1 50 –0.03 –0.05 –2.5 –0.5 –1 –2.5 IC (A) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical) (IC / IB=1000) –3 –0.1 IC (A) (VCE=–4V) –2.5 –3 Ta=125°C –1.0 IC=–1A –1 IC=–0.5A 75°C 0 –0.2 –0.5 125 °C 75° C 25° C –30 °C 25°C –1.5 IC=–2A Ta= –30°C –1 –2 IC (A) –2 VCE (sat) (V) VCE (sat) (V) –2.0 –0.5 –1 0 –0.1 –2.5 –0.5 –1 –5 –10 0 0 –50 –1 θ j-a-PW Characteristics PT-Ta Characteristics 3 50 –2 –3 VBE (V) IB (mA) IC (A) Safe Operating Area (SOA) –5 4 s 0µ 10 1-1 Chip Operation 2-2 Chip Operation 3-3 Chip Operation 4-4 Chip Operation 3 PT (W) 10 5 IC (A) s m 10 –1 s 1m θ j–a (°C / W) 2 2 1 –0.5 1 Single Pulse –0.1 Without Heatsink Ta=25°C 1 1 5 10 50 100 PW (mS) 500 1000 0 0 50 100 Ta (°C) 150 –0.05 –3 –5 –10 –50 –100 VCE (V) 159