SDC01 NPN General purpose Absolute maximum ratings External dimensions E Electrical characteristics (Ta=25°C) ••• SD (Ta=25°C) Specification min typ max Symbol Ratings Unit Symbol Unit Conditions VCBO 80 V ICBO 10 µA VCB=80V VCEO 50 V ICES 100 µA VCES=50V VEBO 6 V IEBO 10 µA VEB=6V IC 2 A VCEO 50 V IC=10mA ICP 3 (PW≤1ms, Du≤10%) A hFE 500 IB 0.5 A VCE(sat) 0.4 V PT 3 (Ta=25°C) W VBE(sat) 1.1 V Tj 150 °C fT Tstg –40 to +150 °C θ j–a 41.6 °C/W 2000 VCE=4V, IC=0.5A 40 IC=0.5A, IB=5mA MHz VCE=12V, IE=–0.1A ■Equivalent circuit diagram 15,16 1 13,14 3 11,12 9,10 5 2 7 4 6 8 Characteristic curves IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical) (VCE=4V) IB=100mA 2000 1.8 (VCE=4V) 2000 75°C mA 30m A Ta=125°C 10 1.6 1.4 25°C A 1000 5m 1000 –30°C 3mA 1.2 0.8 hFE hFE IC (A) 500 500 2mA 1.0 1mA 0.6 0.4 100 100 0.2 0 0 1 2 3 4 5 50 0.01 6 0.1 VCE(sat)-IC Temperature Characteristics (Typical) 50 0.01 3 0.1 1 3 IC (A) VCE(sat)-IB Temperature Characteristics (Typical) (IC / IB=500) 1.5 1 IC (A) VCE (V) IC-VBE Temperature Characteristics (Typical) (IC=0.5A) 1.5 (VCE=4V) 1.8 1.6 1.0 0.8 25°C 0.5 25°C –30°C 0.5 75°C 0.6 –30°C 0.4 75°C 25°C –30°C 75°C 25°C 1.2 Ta=125°C Ta=1 Ta=125°C 1.0 IC (A) VCE (sat) (V) VCE (sat) (V) 1.4 1.0 0.2 0 0.05 0.1 0.5 0 0.5 1 1 10 IC (A) 0 0 100 0.5 θ j-a-PW Characteristics PT-Ta Characteristics 50 3 1.0 1.5 VBE (V) IB (mA) Safe Operating Area (SOA) 5 4 1-1 Chip Operation 2-2 Chip Operation 3-3 Chip Operation 4-4 Chip Operation 3 100µs 2 IC (A) PT (W) 1 s 10 m 10 θ j–a (°C / W) s 1m 2 1 1 1 0.5 0.1 Single Pulse Without Heatsink Ta=25°C 0.1 1 10 PW (mS) 100 1000 0 0 50 100 Ta (°C) 150 0.05 1 10 100 VCE (V) 161