SANKEN SI-8000E_11

1-1-3 DC/DC Converter ICs
SI-8000E Series
Full-Mold, Separate Excitation Step-down Switching Mode
■Features
■Lineup
• Compact full-mold package (equivalent to
TO220)
Part Number
SI-8050E
VO(V)
5.0
IO(A)
0.6
• High efficiency: 80%
• Requires only 4 discrete components
• Internally-adjusted phase correction and output
voltage
■Absolute Maximum Ratings
Parameter
• Built-in reference oscillator (60kHz)
DC Input Voltage
• Built-in overcurrent and thermal protection
circuits
Power Dissipation
■Applications
• Power supplies for telecommunication
equipment
Symbol
Ratings
VIN
43
V
PD1
14(With infinite heatsink)
W
PD2
Unit
1.5(Without heatsink, stand-alone operation)
W
Junction Temperature
Tj
+125
Storage Temperature
Tstg
–40 to +125
°C
Thermal Resistance(junction to case)
θ j-c
7.0
°C/W
Thermal Resistance(junction to ambient air)
θ j-a
66.7
°C/W
°C
• Onboard local power supplies
■Recommended Operating Conditions
Ratings
Parameter
Symbol
Unit
SI-8050E
DC Input Voltage Range
VIN
7 to 40
Output Current Range
IO
0 to 0.6
V
A
Operating Junction Temperature Range
Tjop
–30 to +125
°C
Operating Temperature Range
Top
–30 to +125
°C
■Electrical Characteristics
(Ta=25°C)
Ratings
Parameter
SI-8050E
Symbol
VO
Output Voltage
min.
4.80
Conditions
Load Regulation
Temperature Coefficient of Output Voltage
Overcurrent Protection Starting
Current
32
ICs
Conditions
%
kHZ
VIN=20V, IO=0.3A
80
Conditions
100
mV
VIN=10 to 30V, IO=0.3A
30
∆VOLOAD
Conditions
VIN=20V, IO=0.1 to 0.4A
∆VO/∆Ta
IS1
V
60
∆VOLINE
Conditions
5.20
VIN=20V, IO=0.3A
f
Line Regulation
5.00
80
Conditions
Oscillation Frequency
max.
VIN=20V, IO=0.3A
η
Efficiency
Unit
typ.
±0.5
40
mV
mV/°C
0.61
VIN=10V
A
SI-8000E Series
■External Dimensions (TO220F-5)
(Unit : mm)
4.2
±0.2
2.8
(17.9)
16.9±0.3
4.0±0.2
7.9±0.2
0.5
±0.2
φ 3.2±0.2
±0.2
10.0
2.6±0.1
(2.0)
Pin Assignment
q VIN
w SWOUT
e GND
r VOS
t N.C
±0.15
(4.6)
+0.2
0.85 –0.1
(8.0)
0.95
+0.2
0.45 –0.1
P1.7±0.7×4=6.8±0.7
3.9±0.7
1 2 3 4 5
(4.3)
8.2±0.7
Plastic Mold Package Type
Flammability: UL94V-0
Product Mass: Approx. 2.3g
Forming No. 1101
■Block Diagram
■Typical Connection Diagram
5V : 200µH
VIN
1
2 SWOUT
OCP
VIN
Reg.
OSC
1
TSD
Reset
Drive
+
Comp.
2
VIN
SI-8000E
C1
100µF
4 VOS
Amp.
D1
AK06
(Sanken)
VOS
GND
3
VREF
L1
NC
+
C2
330µF
4
5
GND
3
GND
VO
SWOUT
GND
5
N.C
■Ta-PD Characteristics
Infinite heatsink
With Silicone Grease
Heatsink: Aluminum
0×
10
m
2m
0×
10
20
0×
10
m
(5
75
.2°
×7
C/
5×
W
2m
)
m
(7.
6°
C/
W)
.3
VO
VIN
IO
ηx
VF
/
°C
W
)
5
Without heatsink
0
–30
0
25
50
100
VO
–1 –VF·IO 1–
ηχ
VIN
(2
0×
2m
PD=VO·IO
The efficiency depends on the input voltage and the output current. Therefore, obtain the value from the efficiency graph and
substitute the percentage in the formula above.
20
Power Dissipation PD (W)
15
75
100
125
:
:
:
:
:
Output voltage
Input voltage
Output current
Efficiency (%)
Diode D1 forward voltage
0.4V(AK06)
Operating Ambient Temperature Ta (°C)
Thermal design for D1 must be considered separately.
ICs
33