SANKEN SLA5018

SLA5018
N-channel + P-channel
H-bridge
External dimensions A
Absolute maximum ratings
(Ta=25°C)
Ratings
Symbol
Unit
N channel
P channel
60
–60
±10
20
±5
4
±10 (PW≤1ms)
8 (PW≤1ms)
2
—
5 (Ta=25°C, with all circuits operating, without heatsink)
35 (Tc=25°C, with all circuits operating, with infinite heatsink)
25 (Junction-Air, Ta=25°C, with all circuits operating)
3.57 (Junction-Case, Tc=25°C, with all circuits operating)
1000 (Between fin and lead pin, AC)
150
–40 to +150
VDSS
VGSS
ID
ID(pulse)
EAS*
PT
θ j-a
θ j-c
VISO
Tch
Tstg
•••
V
V
A
A
mJ
W
W
°C/W
°C/W
Vrms
°C
°C
* : VDD=20V, L=1mH, ID=2A, unclamped, see Fig. E on page 15.
■Equivalent circuit diagram
10
7
Pch 12
8
11
2
Nch
9
4
5
1
6
3
Characteristic curves
ID-VDS Characteristics (Typical)
ID-VGS Characteristics (Typical)
N-ch
P-ch
N-ch
–8
10
(VDS=10V)
10
–10V
10V
8
8
–6
3.5V
6
–7V
ID (A)
6
ID (A)
ID (A)
4V
–4
4
4
TC=–40°C
–6V
25°C
–2
VGS=3V
2
2
125°C
–5V
0
VGS=–4V
–0
0
2
4
6
8
0
10
–2
–4
–6
–8
0
–10
0
VDS (V)
VDS (V)
1
2
3
4
5
VGS (V)
RDS(ON)-ID Characteristics (Typical)
N-ch
P-ch
0.3
0.6
P-ch
(VGS=–10V)
(VDS=–10V)
–8
TC=–40°C
25°C
0.5
125°C
(ON)
RDS
0.3
RDS
VGS=10V
0.4
ID (A)
(Ω)
0.2
(ON)
(Ω)
–6
4V
0.1
–4
0.2
–2
0.1
0
0
1
2
3
4
5
6
7
8
9
0
10
0
–2
–4
–6
–8
RDS(ON)-TC Characteristics (Typical)
N-ch
0.4
ID=–2A
VGS=–10V
(ON)
(Ω)
(Ω)
0.6
VGS=10V
0.4
RDS
0.2
RDS
(ON)
0.8
4V
0.3
0.2
0.1
0
–40
0
50
TC (°C)
56
P-ch
(ID=2.5A)
100
150
0
–40
0
50
TC (°C)
–0
0
–2
–4
–6
VGS (V)
ID (A)
ID (A)
100
150
–8
–10
SLA
SLA5018
Electrical characteristics
(Ta=25°C)
N channel
Symbol
Specification
min
V(BR)DSS
typ
max
60
P channel
Specification
Unit
Conditions
V
ID=250µA, VGS=0V
min
±500
nA
VGS=±10V
IDSS
250
µA
VDS=60V, VGS=0V
2.0
V
VDS=10V, ID=250µA
–2.0
S
VDS=10V, ID=5A
1.6
VTH
1.0
3.1
4.6
RDS(ON)
0.17
0.22
Ω
VGS=10V, ID=2.5A
0.25
0.30
Ω
VGS=4V, ID=2.5A
max
Unit
Conditions
V
ID=–250µA, VGS=0V
–60
IGSS
Re(yfs)
typ
500
nA
VGS= 20V
–250
µA
VDS=–60V, VGS=0V
–4.0
2.2
0.38
0.55
V
VDS=–10V, ID=–250µA
S
VDS=–10V, ID=–4A
Ω
VGS=–10V, ID=–2A
Ciss
400
pF
VDS=25V, f=1.0MHz,
270
pF
VDS=–25V, f=1.0MHz,
Coss
160
pF
VGS=0V
170
pF
VGS=0V
ton
80
ns
ID=5A, VDD 30V, VGS=5V,
60
ns
ID=–4A, VDD –30V, VGS=–10V,
toff
50
ns
see Fig. 3 on page 16.
60
ns
see Fig. 4 on page 16.
V
ISD=5A, VGS=0V
–4.4
V
ISD=–4A, VGS=0V
ns
ISD=±100mA
150
ns
ISD= 100mA
VSD
1.1
trr
150
1.5
–5.5
Characteristic curves
Re(yfs)-ID Characteristics (Typical)
N-ch
(VDS=10V)
10
Safe Operating Area (SOA)
P-ch
N-ch
(VDS=–10V)
5
(TC=25°C)
20
s
0µ
10
ID (pulse) max
25°C
1
IT
10
M
5
m
LI
s
)
°C
25
5°C
12
(1
(O
N
sh
ot
S
)
D
TC
1
R
C
C
ID (A)
5°
12
Re (yfs) (S)
Re (yfs) (S)
TC
0°
4
=–
s
C
0°
4
=–
1m
ED
10
5
1
0.5
0.5
0.5
0.3
0.05
0.5
0.1
1
5
0.3
–0.1
10
–0.5
–5
–1
0.1
0.5
–8
1
5
ID (A)
ID (A)
10
50
100
VDS (V)
Capacitance-VDS Characteristics (Typical)
VGS=0V
f=1MHz
N-ch
1000
VGS=0V
f=1MHz
P-ch
700
P-ch
IT
ED
M
LI
N)
S
RD
ID (A)
50
)
100
ot
(O
Coss
sh
Capacitance (pF)
s
(1
50
s
s
m
Coss
0µ
–5
Ciss
10
–1
–0.5
Crss
Crss
10
10
0
10
20
30
40
50
0
–10
–20
VDS (V)
–30
–40
–50
–0.1
–0.5
–1
–5
VDS (V)
–10
–50 –100
VDS (V)
IDR-VSD Characteristics (Typical)
PT-Ta Characteristics
N-ch
P-ch
–8
10
40
With Silicone Grease
Natural Cooling
All Circuits Operating
35
8
–6
30
ea
H
20
k
in
ts
IDR (A)
ite
4
25
fin
10V
–10V
–4
In
6
PT (W)
ith
W
IDR (A)
Capacitance (pF)
Ciss
100
10
ID (pulse) max
1m
500
(TC=25°C)
–10
500
15
–5V
–2
4V
10
2
VGS=0V
VGS=0V
0
0
1.0
0.5
VSD (V)
1.5
Without Heatsink
5
0
0
0
–1
–2
–3
VSD (V)
–4
–5
0
50
100
150
Ta (°C)
57