SLA5018 N-channel + P-channel H-bridge External dimensions A Absolute maximum ratings (Ta=25°C) Ratings Symbol Unit N channel P channel 60 –60 ±10 20 ±5 4 ±10 (PW≤1ms) 8 (PW≤1ms) 2 — 5 (Ta=25°C, with all circuits operating, without heatsink) 35 (Tc=25°C, with all circuits operating, with infinite heatsink) 25 (Junction-Air, Ta=25°C, with all circuits operating) 3.57 (Junction-Case, Tc=25°C, with all circuits operating) 1000 (Between fin and lead pin, AC) 150 –40 to +150 VDSS VGSS ID ID(pulse) EAS* PT θ j-a θ j-c VISO Tch Tstg ••• V V A A mJ W W °C/W °C/W Vrms °C °C * : VDD=20V, L=1mH, ID=2A, unclamped, see Fig. E on page 15. ■Equivalent circuit diagram 10 7 Pch 12 8 11 2 Nch 9 4 5 1 6 3 Characteristic curves ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) N-ch P-ch N-ch –8 10 (VDS=10V) 10 –10V 10V 8 8 –6 3.5V 6 –7V ID (A) 6 ID (A) ID (A) 4V –4 4 4 TC=–40°C –6V 25°C –2 VGS=3V 2 2 125°C –5V 0 VGS=–4V –0 0 2 4 6 8 0 10 –2 –4 –6 –8 0 –10 0 VDS (V) VDS (V) 1 2 3 4 5 VGS (V) RDS(ON)-ID Characteristics (Typical) N-ch P-ch 0.3 0.6 P-ch (VGS=–10V) (VDS=–10V) –8 TC=–40°C 25°C 0.5 125°C (ON) RDS 0.3 RDS VGS=10V 0.4 ID (A) (Ω) 0.2 (ON) (Ω) –6 4V 0.1 –4 0.2 –2 0.1 0 0 1 2 3 4 5 6 7 8 9 0 10 0 –2 –4 –6 –8 RDS(ON)-TC Characteristics (Typical) N-ch 0.4 ID=–2A VGS=–10V (ON) (Ω) (Ω) 0.6 VGS=10V 0.4 RDS 0.2 RDS (ON) 0.8 4V 0.3 0.2 0.1 0 –40 0 50 TC (°C) 56 P-ch (ID=2.5A) 100 150 0 –40 0 50 TC (°C) –0 0 –2 –4 –6 VGS (V) ID (A) ID (A) 100 150 –8 –10 SLA SLA5018 Electrical characteristics (Ta=25°C) N channel Symbol Specification min V(BR)DSS typ max 60 P channel Specification Unit Conditions V ID=250µA, VGS=0V min ±500 nA VGS=±10V IDSS 250 µA VDS=60V, VGS=0V 2.0 V VDS=10V, ID=250µA –2.0 S VDS=10V, ID=5A 1.6 VTH 1.0 3.1 4.6 RDS(ON) 0.17 0.22 Ω VGS=10V, ID=2.5A 0.25 0.30 Ω VGS=4V, ID=2.5A max Unit Conditions V ID=–250µA, VGS=0V –60 IGSS Re(yfs) typ 500 nA VGS= 20V –250 µA VDS=–60V, VGS=0V –4.0 2.2 0.38 0.55 V VDS=–10V, ID=–250µA S VDS=–10V, ID=–4A Ω VGS=–10V, ID=–2A Ciss 400 pF VDS=25V, f=1.0MHz, 270 pF VDS=–25V, f=1.0MHz, Coss 160 pF VGS=0V 170 pF VGS=0V ton 80 ns ID=5A, VDD 30V, VGS=5V, 60 ns ID=–4A, VDD –30V, VGS=–10V, toff 50 ns see Fig. 3 on page 16. 60 ns see Fig. 4 on page 16. V ISD=5A, VGS=0V –4.4 V ISD=–4A, VGS=0V ns ISD=±100mA 150 ns ISD= 100mA VSD 1.1 trr 150 1.5 –5.5 Characteristic curves Re(yfs)-ID Characteristics (Typical) N-ch (VDS=10V) 10 Safe Operating Area (SOA) P-ch N-ch (VDS=–10V) 5 (TC=25°C) 20 s 0µ 10 ID (pulse) max 25°C 1 IT 10 M 5 m LI s ) °C 25 5°C 12 (1 (O N sh ot S ) D TC 1 R C C ID (A) 5° 12 Re (yfs) (S) Re (yfs) (S) TC 0° 4 =– s C 0° 4 =– 1m ED 10 5 1 0.5 0.5 0.5 0.3 0.05 0.5 0.1 1 5 0.3 –0.1 10 –0.5 –5 –1 0.1 0.5 –8 1 5 ID (A) ID (A) 10 50 100 VDS (V) Capacitance-VDS Characteristics (Typical) VGS=0V f=1MHz N-ch 1000 VGS=0V f=1MHz P-ch 700 P-ch IT ED M LI N) S RD ID (A) 50 ) 100 ot (O Coss sh Capacitance (pF) s (1 50 s s m Coss 0µ –5 Ciss 10 –1 –0.5 Crss Crss 10 10 0 10 20 30 40 50 0 –10 –20 VDS (V) –30 –40 –50 –0.1 –0.5 –1 –5 VDS (V) –10 –50 –100 VDS (V) IDR-VSD Characteristics (Typical) PT-Ta Characteristics N-ch P-ch –8 10 40 With Silicone Grease Natural Cooling All Circuits Operating 35 8 –6 30 ea H 20 k in ts IDR (A) ite 4 25 fin 10V –10V –4 In 6 PT (W) ith W IDR (A) Capacitance (pF) Ciss 100 10 ID (pulse) max 1m 500 (TC=25°C) –10 500 15 –5V –2 4V 10 2 VGS=0V VGS=0V 0 0 1.0 0.5 VSD (V) 1.5 Without Heatsink 5 0 0 0 –1 –2 –3 VSD (V) –4 –5 0 50 100 150 Ta (°C) 57