SLA5002 Absolute maximum ratings N-channel With built-in flywheel diode Electrical characteristics (Ta=25°C) Symbol Ratings Unit Symbol VDSS VGSS ID 100 ±20 ±5 ±10 (PW≤1ms) 30 5 (PW≤0.5ms, Du≤25%) 10 (PW≤10ms, Single Pulse) 120 V V A A mJ A A V W W °C/W °C/W Vrms °C °C V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss ton toff VSD trr ID(pulse) EAS* IF IFSM VR PT θ j-a θ j-c VISO Tch Tstg 5 (Ta=25°C, with all circuits operating, without heatsink) 35 (Tc=25°C,with all circuits operating, with infinite heatsink) 25 (Junction-Air, Ta=25°C, with all circuits operating) 3.57 (Junction-Case, Tc=25°C, with all circuits operating) 1000 (Between fin and lead pin, AC) 150 –40 to +150 1 4 9 5 8 10 SLA Unit Conditions V nA µA V S Ω pF pF ns ns V ns ID=250µA, VGS=0V VGS=±20V VDS=100V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=5A VGS=10V, ID=5A VDS=25V, f=1.0MHz, VGS=0V ID=5A, VDD 50V,VGS=10V, see Fig. 3 on page 16. ISD=5A, VGS=0V ISD=±100mA ●Diode for flyback voltage absorption Symbol min 120 VR VF IR trr ■Equivalent circuit diagram 3 ••• (Ta=25°C) Specification min typ max 100 ±500 250 2.0 4.0 2.4 3.7 0.27 0.30 350 130 60 40 1.1 1.8 330 * : VDD=20V, L=10mH, ID=2.5A, unclamped, see Fig. E on page 15 2 External dimensions A 11 Specification typ max 1.0 1.2 10 100 Unit Conditions V V µA ns IR=10µA IF=1A VR=120V IF=±100mA 12 6 7 Characteristic curves ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical) (VDS=10V) 10 10 10V (VGS=10V) 0.4 7V 8 8 0.3 (Ω) 6V 6 (ON) TC=–40°C 4 4 25°C 5V 0.2 RDS ID (A) ID (A) 6 125°C 0.1 2 2 VGS=4V 0 0 0 0 2 4 6 8 10 0 2 4 VDS (V) Re(yfs)-ID Characteristics (Typical) 0 8 2 4 6 0.5 VGS=0V f=1MHz 1000 500 Ciss Capacitance (pF) (Ω) 0.3 (ON) RDS Re (yfs) (S) 0.4 TC=–40°C 25°C 10 Capacitance-VDS Characteristics (Typical) ID=5A VGS=10V 5 1 8 ID (A) RDS(ON)-TC Characteristics (Typical) (VDS=10V) 7 6 VGS (V) 0.2 Coss 100 50 125°C 0.1 0.5 0.3 0.05 0.5 0.1 1 5 Crss 10 0 –40 10 0 50 150 100 0 10 20 ID (A) IDR-VSD Characteristics (Typical) 30 40 50 VDS (V) TC (°C) Safe Operating Area (SOA) PT-Ta Characteristics (TC=25°C) 20 10 40 10 0µ s ID (pulse) max 10 ED 5 10 IT M LI ID (A) ot ) D 20 k sin 1 4 25 at He 15 V 10 10 S= 0V 2 0.5 5V 0 0 0.5 1.0 VSD (V) Without Heatsink 5 VG IDR (A) R 30 sh ite fin In S (1 ith W 6 s m s ) N (O With Silicone Grease Natural Cooling All Circuits Operating 35 1m PT (W) 8 1.5 0.1 0.5 0 1 5 10 VDS (V) 50 100 0 50 100 150 Ta (°C) 35