SANKEN SLA5057

SLA5057
N-channel
General purpose
External dimensions A
Absolute maximum ratings
(Ta=25°C)
Ratings
Symbol
FET 1
Unit
FET 2
VDSS
200
V
VGSS
±20
V
ID
±7
A
ID(pulse) *
±15
A
5 (Ta=25°C, with all circuits operating, without heatsink)
W
35 (Tc=25°C, with all circuits operating, with infinite heatsink)
W
θ j-a
25 (Junction-Air, Ta=25°C, with all circuits operating)
°C/W
θ j-c
3.57 (Junction-Case, Tc=25°C, with all circuits operating)
°C/W
VISO
1000 (Between fin and lead pin, AC)
Vrms
Tch
150
°C
Tstg
–40 to +150
°C
PT
SLA
•••
* : PW≤100µs, duty≤50%
■Equivalent circuit diagram
3
6
8
10
12
14
FET-1
FET-1
FET-2
FET-2
FET-2
FET-2
2
5
7
9
11
13
1
15
4 pin is NC
Characteristic curves
ID-VDS Characteristics (Typical)
ID-VGS Characteristics (Typical)
FET 1
FET 2
6
10V
10V
5.5V
8
5V
FET 1
(VDS=10V)
10
6V
7
10
5.5V
8
5
6V
4
5V
3
4
125°C
4
6
2
2
2
VGS=4V
0
0
2
4
6
TC= –40°C
4.5V
ID (A)
ID (A)
ID (A)
6
4.5V
1
8
0
0
10
25°C
VGS=4V
2
4
6
8
0
0
10
2
VDS (V)
VDS (V)
4
6
8
VGS (V)
RDS(ON)-ID Characteristics (Typical)
FET 1
FET 2
(VGS=10V)
200
FET 2
(VGS=10V)
0.5
(VDS=10V)
7
6
0.4
150
ID (A)
RDS (ON) (Ω)
100
RDS
(ON)
(mΩ)
5
0.3
4
3
TC= –40°C
0.2
2
25°C
50
0.1
0
0
2
4
6
8
0
0
10
0
1
2
3
4
5
6
7
ID (A)
ID (A)
RDS(ON)-TC Characteristics (Typical)
FET 1
400
ID=5A
VGS=10V
FET 2
1.0
ID=3.5A
VGS=10V
0.8
(Ω)
0.6
(ON)
RDS
RDS
(ON)
(mΩ)
300
200
0.4
100
0.2
0
–40
0
50
TC (°C)
100
150
0
–40
125°C
1
0
50
TC (°C)
100
150
0
2
4
VGS (V)
6
8
SLA5057
Electrical characteristics
(Ta=25°C)
FET 1
Symbol
Specification
min
V(BR)DSS
typ
max
200
FET 2
Specification
Unit
Conditions
V
ID=100µA, VGS=0V
min
typ
max
Unit
Conditions
V
ID=100µA, VGS=0V
200
IGSS
±100
nA
VGS=±20V
±100
nA
VGS=±20V
IDSS
100
µA
VDS=200V, VGS=0V
100
µA
VDS=200V, VGS=0V
4.0
V
VDS=10V, ID=1mA
2.0
S
VDS=10V, ID=3.5A
2.5
mΩ
VGS=10V, ID=3.5A
270
pF
VDS=10V
450
VTH
2.0
Re(yfs)
4.5
6.5
RDS(ON)
130
Ciss
850
175
4.0
V
VDS=10V, ID=1mA
S
VDS=10V, ID=3.5A
mΩ
VGS=10V, ID=3.5A
pF
VDS=10V
5.0
350
Coss
550
pF
f=1.0MHz
280
pF
f=1.0MHz
Crss
250
pF
VGS=0V
120
pF
VGS=0V
td (on)
20
ns
ID=3.5A
20
ns
ID=3.5A
tr
25
ns
VDD 100V
30
ns
VDD 100V
td (off)
90
ns
RL=28.6Ω
55
ns
RL=28.6Ω
tf
70
ns
VGS=10V
75
ns
VGS=10V
V
ISD=7A, VGS=0V
1.0
V
ISD=7A, VGS=0V
ns
IF=±100mA
450
ns
IF=±100mA
VSD
1.0
trr
500
1.5
1.5
Characteristic curves
Re(yfs)-ID Characteristics (Typical)
FET 1
Safe Operating Area (SOA)
FET 2
(VDS=10V)
20
FET 1
(VDS=10V)
10
(TC=25°C)
ID (pulse) max
50
10
D
5
Tc
°
40
C
=–
TC
°C
25
=1
TC
TC=25°C
°C
40
°C
25 °C
5
12
10
=–
n)
S
1m
m
1
5
0.5
1
0.3
0.05
10
ho
t)
0.1
0.5
s(
1s
1-circuit operation
0.05
0.5
0.1
s
10
1
1
0.5
s
LIM
(o
RD
5
ID (A)
5
Re (yfs) (S)
Re (yfs) (S)
10
0.3
0.05
0µ
E
IT
0.1
0.5
ID (A)
1
0.01
0.5
5 7
1
5
ID (A)
10
50
100
500
VDS (V)
Capacitance-VDS Characteristics (Typical)
VGS=0V
f=1MHz
FET 1
3000
VGS=0V
f=1MHZ
FET 2
2000
FET 2
(TC=25°C)
20
ID (pulse) max
1000
10
0µ
10
Coss
100
50
s
5
Ciss
10
m
RDS (on) LIMITED
ID (A)
500
100
Coss
50
30
40
3
0
50
sh
ot
)
1-circuit operation
Crss
5
20
(1
0.5
Crss
10
s
1
10
10
0
s
1m
500
Ciss
Capacitance (pF)
Capacitance (pF)
1000
10
20
30
40
0.1
50
0.05
3
5
10
50
VDS (V)
VDS (V)
IDR-VSD Characteristics (Typical)
FET 2
10
40
7
With Silicone Grease
Natural Cooling
All Circuits Operating
35
6
8
30
nk
PT (W)
si
t
ea
H
IDR (A)
ite
fin
In
20
15
0.5
1
1.0
VSD (V)
V
10
5.
1.5
0
0
10
VGS=
0V
2
VGS=0V
V
10
0
0
3
25
ith
4
4
W
IDR (A)
5
6
5.
500
PT-Ta Characteristics
FET 1
2
100
VDS (V)
Without Heatsink
5
0
0.5
1.0
VSD (V)
1.5
0
50
100
Ta (°C)
150