SANKEN SLA6848MP

1-2-4 High-voltage 3-phase Motor Driver ICs
SMA6843MP/SLA6848MP Support for 3-shunt
■Features
■Absolute Maximum Ratings
• A package of 6 MOSFET units for 3-phase
bridge and pre-drive (HVIC, LVIC)
Parameter
Symbol
• High side drive of bootstrap method has been
employed.
Unit
Conditions
SMA6843MP
SLA6848MP
VDSS
500
500
V
Vcc=15V,VIN=0V
Control Supply Voltage
Vcc
20
20
V
Between V CC and COM
Control Supply Voltage (bootstrap)
Output Current (continuous)
VBS
Io
20
2.5
20
2.5
V
A
Between VB and HS (U, V, W)
PW≤100µs, duty=1%
MOSFET Output Withstand Voltage
• Best for driving fan motors and pumps
(Ta=25°C)
Ratings
Output Current (pulse)
I op
5
5
A
• Built-in undervoltage lock out (auto regression)
Input Voltage
VIN
–0.5 to +7
–0.5 to +7
V
• Built-in overheat detection circuit (no stopping)
Power Dissipation
PD
28
31
W
Tc=25°C
Thermal Resistance (Junction to Case)
Thermal Resistance (Junction to Ambient Air)
θ j-c
θ j-a
4.5
28
4
31
°C/W
°C/W
When all elements operating
When all elements operating
Operating Case Temperature
Top
–20 to +100
–20 to +100
°C
Junction Temperature (Power part)
Tch
+150
+150
°C
Storage Temperature
Tstg
–40 to +150
–40 to +150
°C
• Built-in fail signal output function (for when the
overheat detection circuit and UVLO)
• Support for 3-shunt current detection
■Recommended Operating Conditions
Ratings
Parameter
Symbol
SMA6843MP
SLA6848MP
Unit
Conditions
400
16.5
V
V
Between V BB and LS
Between VCC and COM
µs
min.
typ.
max.
min.
typ.
max.
–
13.5
280
–
400
16.5
–
13.5
280
–
Main Supply Voltage
Control Supply Voltage
Vss
Vcc
Input Signal Dead Time
tdead
1.5
–
–
1.5
–
–
Minimum Input Pulse Width
tw
0.5
–
–
0.5
–
–
µs
Junction Temperature
Tj
–
–
125
–
–
125
°C
■Electrical Characteristics
Ratings
Parameter
Symbol
min.
SMA6843MP
typ.
max.
min.
SLA6848MP
typ.
max.
Unit
Conditions
Between V CC and COM
Control Supply Voltage
Vcc
13.5
15
16.5
13.5
15
16.5
V
Control Supply Current
Icc
–
4
6
–
4
6
mA
V IH
–
2
2.5
–
2
2.5
Input VoltageVIH
Input Voltage Hysteresis Width
Input Current
VIL
1
1.5
–
1
1.5
–
VH
I IH
–
–
0.5
50
–
100
–
–
0.5
50
–
100
IIL
–
–
2
–
–
2
Undervoltage Lock Out
(high side)
UVHL
9.0
10.0
11.0
9.0
10.0
11.0
UVHH
9.5
10.5
11.5
9.5
10.5
11.5
Undervoltage Lock Out
(low side)
Uvhys
UVHL
–
10.0
0.5
11.0
–
12.0
–
10.0
0.5
11.0
–
12.0
UVHH
10.5
11.5
12.5
10.5
11.5
12.5
Uvhys
–
0.5
–
–
0.5
–
V
V
µA
V
V
Vcc=15V
Vcc=15V, Output:ON
Vcc=15V, Output:OFF
Vcc=15V
Vcc=15V, VIN=5V
Vcc=15V, VIN=0V
Between VB and U (V, W)
Between V CC and COM
VFOL
0
–
1.0
0
–
1.0
VFOH
TDH
4.0
135
–
150
5.5
165
4.0
135
–
150
5.5
165
Overheat Detection Release Threshold
TDL
105
120
135
105
120
135
°C
Vcc=15V
MOSFET Output Withstand Voltage
V DSS
500
–
–
500
–
–
V
Vcc=15V, ID=100µA, VIN=0V
IDSS
–
–
100
–
–
100
µA
Vcc=15V, VIN=0V
RDS(ON)
VSD
–
–
2.0
1.0
2.4
1.5
–
–
2.0
1.0
2.4
1.5
Ω
V
Vcc=15V, VIN=0V
Vcc=15V, VIN=0V
ns
di/dt=100A/µs
–
420
–
–
420
FO Pin Output Voltage
Overheat Detection Threshold
MOSFET Output Leakage Current
MOSFET DC On Resistance
Diode Forward Voltage
Diode Reverse Recovery Time
trr
td(on)
High Side Switching Time
Low Side Switching Time
136
ICs
75
75
V
Vcc=15V
–
tr
–
60
–
–
60
–
td(off)
tf
–
–
440
40
–
–
–
–
440
40
–
–
td(on)
–
420
–
–
420
–
tr
–
70
–
–
70
–
td(off)
–
380
–
–
380
–
tf
–
30
–
–
30
–
ns
VBB=280V, Vcc=15V,
VIN=0⇔5V, ID=2.5A
ns
SMA6843MP/SLA6848MP
■Typical Connection Diagram
5
2
3
4
VB1
VB2
VB3
VCC1
11
10
HO1
1
HS1
The input pulldown resistor is built in IC (about 100
kΩ). However, if the input is expected to be unstable
or very fluctuant, it needs to be reinforced with
external resistor.
HO2
13
HS2
9
M
HIN1
8
HIN2
HIN3
7
6
COM1
12
HS3
HVIC
23
The overheat detection threshold can be variable by
externally attaching R1 and R2.
HO3
14
Attach capacitors near IC. Attach a ceramic capacitor
in parallel with the electrolytic capacitor if too much
noise is generated.
VCC2
20
LIN1
LO1
19
LIN2
18
24
MCU
LIN3
LO2
17
5V
R1
LO3
16
TADJ
15
R2
22
FO
21
COM2
LVIC
15V
■External Dimensions (ZIP24 [SMA24Pin]/ZIP24 with Fin [SLA24Pin])
SMA6843MP
SLA6848MP
31±0.2
4.8±0.2
24.4±0.2
4±0.2
31±0.2
16.4±0.2
Gate burr
Gate burr
1.7±0.1
φ 3.2±0.15 X 3.8
0.6 +0.15
–0.05
3
5
4
7
6
9
8
11
10
13
12
15
14
17
16
19
18
9.5 +0.7
–0.5
0.5 +0.15
–0.05
4.5±0.7
(Measured at the tip)
5±0.5
31.3±0.2
(Including the resin burr)
21
20
R-end
(4.5)
4.5±0.5
(Measured at the tip)
31.3±0.2
(Including the resin burr)
2
16±0.2
9.9±0.2
0.5 +0.15
–0.05
23 X P1.27±0.7=29.21±1
1
2.45±0.2
(Measured at the root)
4-(R1)
(10.5)
(4.5)
(4
-R
1
23 X P1.27±0.5=29.21±0.6
(Measured at the tip)
Lot No.
)
R-end
0.6 +0.15
–0.05
JAPAN
Part No.
12.9±0.2
1.2±0.1
(Measured at the root)
9.5 +0.7
–0.05
Part No.
5±0.5
10.2±0.2
φ 3.2±0.15
Lot No.
JAPAN
2
23
22
24
Forming No. 2452
Product Mass: Approx. 3.9 g
1
4
3
6
5
8
7
10
9
12
11
14
13
16
15
18
17
20
19
22
21
24
23
Forming No. 2171
Product Mass: Approx. 6.2 g
ICs
137