SAVANTIC 2SB1550

SavantIC Semiconductor
Product Specification
2SB1550
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220C package
·High DC current gain
·DARLINGTON
APPLICATIONS
·For medium speed and power
switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector; connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-80
V
VCEO
Collector-emitter voltage
Open base
-80
V
VEBO
Emitter-base voltage
Open collector
-5
V
-10
A
40
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SB1550
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA, IB=0
-80
V
V(BR)CBO
Collector-base breakdown voltage
IC=-0.1mA, IE=0
-80
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-2mA, IC=0
-5
V
VCEsat
Collector-emitter saturation voltage
IC=-5A ,IB=-20mA
-2.0
V
VBEsat
Base-emitter saturation voltage
IC=-5A ,IB=-20mA
-2.5
V
ICBO
Collector cut-off current
VCB=-80V, IE=0
-10
µA
IEBO
Emitter cut-off current
VEB=-5V, IC=0
-2
mA
hFE
DC current gain
IC=-5A ; VCE=-3V
2
MIN
1000
TYP.
MAX
20000
UNIT
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SB1550