SAVANTIC 2SC2615

SavantIC Semiconductor
Product Specification
2SC2615
Silicon NPN Power Transistors
DESCRIPTION
·With TO-247 package
·High voltage,high speed
APPLICATIONS
·For high voltage,high speed and high
power switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-247) and symbol
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
500
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current (DC)
8
A
PC
Collector power dissipation
80
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SC2615
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2A; IB=0
400
V
V(BR)EBO
Emitter-base breakdown voltage
IE=10mA; IC=0
7
V
VCEsat
Collector-emitter saturation voltage
IC=4A ;IB=0.8A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=4A ;IB=0.8A
1.5
V
ICBO
Collector cut-off current
VCB=400V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
0.1
mA
hFE-1
DC current gain
IC=4A ; VCE=5V
15
hFE-2
DC current gain
IC=8A ; VCE=5V
7
2
MIN
TYP.
MAX
UNIT
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SC2615