SAVANTIC 2SC3235

SavantIC Semiconductor
Product Specification
2SC3235
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220 package
·High voltage,high speed
·Low saturation voltage
APPLICATIONS
·For high voltage ,high speed and
high power switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
500
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
2
A
ICM
Collector current-Peak
4
A
PC
Collector power dissipation
20
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SC3235
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA; IB=0
400
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA; IE=0
500
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA; IC=0
7
V
VCEsat
Collector-emitter saturation voltage
IC=1A; IB=0.2 A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=1A; IB=0.2 A
1.5
V
ICBO
Collector cut-off current
VCB=400V; IE=0
10
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
µA
hFE
DC current gain
IC=0.1A ; VCE=5V
2
MIN
20
TYP.
MAX
50
UNIT
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
2SC3235