SAVANTIC 2SB656

SavantIC Semiconductor
Product Specification
2SB656
Silicon PNP Power Transistors
DESCRIPTION
·With TO-3 package
·High power dissipation
APPLICATIONS
·For use in power amplifier applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-160
V
VCEO
Collector-emitter voltage
Open base
-160
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-12
A
IB
Base current
-4
A
PC
Collector power dissipation
125
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SB656
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA ;IB=0
-160
V
V(BR)CBO
Collector-base breakdown voltage
IC=-1mA ;IE=0
-160
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA ;IC=0
-5
V
Collector-emitter saturation voltage
IC=-10A; IB=-1A
-3.0
V
ICBO
Collector cut-off current
VCB=-160V; IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-0.1
mA
hFE
DC current gain
IC=-1A ; VCE=-5V
Transition frequency
IC=-1A ; VCE=-10V
VCEsat
fT
CONDITIONS
hFE Classifications
B
C
60-120
100-200
2
MIN
TYP.
60
MAX
UNIT
200
20
MHz
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
2SB656