SavantIC Semiconductor Product Specification 2SD1407 Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High breakdown voltage ·Low collector saturation voltage ·Complement to type 2SB1016 APPLICATIONS ·Power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector -emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 5 V 5 A 0.5 A 30 W IC Collector current IB Base current PC Collector power dissipation Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SD1407 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0 VCEsat Collector-emitter saturation voltage IC=4A; IB=0.4A 2.0 V VBE Base-emitter voltage IC=1A; VCE=5V 1.5 V ICBO Collector cut-off current VCB=100V; IE=0 100 µA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA hFE-1 DC current gain IC=1A ; VCE=5V 40 hFE-2 DC current gain IC=4A ; VCE=5V 20 Transition frequency IC=1A; VCE=5V 12 MHz Collector output capacitance f=1MHz ; VCB=10V;IE=0 100 pF fT COB CONDITIONS hFE-1 Classifications R O Y 40-80 70-140 120-240 2 MIN TYP. MAX 100 UNIT V 240 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance: ±0.15 mm) 3 2SD1407 SavantIC Semiconductor Product Specification 2SD1407 Silicon NPN Power Transistors 4