SavantIC Semiconductor Product Specification 2SB760 Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·Complement to type 2SD855 APPLICATIONS ·For audio frequency and radio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -5 V -1 A 30 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SB760 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-10mA IB=0 -60 V V(BR)CBO Collector-base breakdown voltage IC=-1mA; IE=0 -60 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA; IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-1A; IB=-0.1A -1.0 V VBEsat Base-emitter saturation voltage IC=-1A; IB=-0.1A -1.5 V ICBO Collector cut-off current VCB=-60V; IE=0 -100 µA IEBO Emitter cut-off current VEB=-5V; IC=0 -100 µA hFE DC current gain IC=-0.2A ; VCE=-4V 2 MIN 40 TYP. MAX 450 UNIT SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 2SB760