SavantIC Semiconductor Product Specification 2SB1085A Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SD1562A ·Low collector saturation voltage APPLICATIONS ·Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -160 V VCEO Collector-emitter voltage Open base -160 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -1.5 A ICM Collector current-peak -3.0 A PC Collector power dissipation 20 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SB1085A Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ,IB=0 -160 V V(BR)CBO Collector-base breakdown voltage IC=-50µA ,IE=0 -160 V V(BR)EBO Emitter-base breakdown voltage IE=-50µA ,IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-1A; IB=-0.1A -2.0 V VBEsat Base-emitter saturation voltage IC=-1A; IB=-0.1A -1.5 V ICBO Collector cut-off current VCB=-120V; IE=0 -1.0 µA IEBO Emitter cut-off current VEB=-4V; IC=0 -1.0 µA hFE DC current gain IC=-0.1A ; VCE=-5V COB Output capacitance IE=0 ; VCB=-10V,f=1MHz 30 pF fT Transition frequency IC=-0.1A ; VCE=-5V 50 MHz hFE classifications D E 60-120 100-200 2 MIN TYP. 60 MAX UNIT 200 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 2SB1085A