SAVANTIC 2SD1855

SavantIC Semiconductor
Product Specification
2SD1855
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220Fa package
·Complement to type 2SB1335
·Low collector saturation voltage
APPLICATIONS
·For low frequency power amplifier
applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
80
V
VCEO
Collector -emitter voltage
Open base
60
V
VEBO
Emitter-base voltage
Open collector
6
V
4
A
30
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SD1855
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=1mA; IB=0
60
V
V(BR)CBO
Collector-base breakdown voltage
IC=50µA; IE=0
80
V
V(BR)EBO
Collector-emitter breakdown voltage
IE=50µA; IC=0
6
V
VCEsat
Collector-emitter saturation voltage
IC=3A ;IB=0.3A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=3A ;IB=0.3A
1.5
V
ICBO
Collector cut-off current
VCB=80V; IE=0
10
µA
IEBO
Emitter cut-off current
VEB=6V; IC=0
10
µA
hFE
DC current gain
IC=1A ; VCE=5V
Transition frequency
IC=0.5A; VCE=5V
8
MHz
Collector output capacitance
f=1MHz ; VCB=10V
90
pF
fT
COB
CONDITIONS
hFE Classifications
D
E
F
60-120
100-200
160-320
2
MIN
TYP.
60
MAX
UNIT
320
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
3
2SD1855