SavantIC Semiconductor Product Specification 2SC2981 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltatge ·High speed APPLICATIONS ·For high voltatge ,high speed and power switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 900 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7 V 8 A 100 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SC2981 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; RBE=7 800 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 900 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 7 V VCE(sat) Collector-emitter saturation voltage IC=2.5A; IB=0.5A 1.0 V VBE(sat) Base-emitter saturation voltage IC=2.5A; IB=0.5A 1.5 V ICBO Collector cut-off current VCB=750V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE-1 DC current gain IC=0.8A ; VCE=5V 15 hFE-2 DC current gain IC=4A ; VCE=5V 10 2 MIN TYP. MAX UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 2SC2981