SavantIC Semiconductor Product Specification 2SC3762 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PML package ·High speed switching ·High current capability APPLICATIONS ·For use in high speed and power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS MAX UNIT VCBO Collector-base voltage Open emitter 150 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 6 V 15 A 65 W IC Collector current PC Collector dissipation Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SC3762 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0 100 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 150 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 6 V VCEsat Collector-emitter saturation voltage IC=10A ;IB=1A 0.6 V VBEsat Base-emitter saturation voltage IC=10A ;IB=1A 1.5 V ICBO Collector cut-off current VCB=100V ;IE=0 10 µA IEBO Emitter cut-off current VEB=4V; IC=0 10 µA hFE DC current gain IC=5A ; VCE=5V 2 MIN 30 TYP. MAX 120 UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 2SC3762