SavantIC Semiconductor Product Specification 2SD2014 Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·DARLINGTON ·Complement to type 2SB1257 APPLICATIONS ·Driver for solenoid,relay and motor, series regulator,and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 120 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 6 V 4 A 0.5 A 25 W IC Collector current IB Base current PC Collector dissipation Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SD2014 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=3A ;IB=3mA 1.5 V VBEsat Base-emitter saturation voltage IC=3A ;IB=3mA 2.0 V ICBO Collector cut-off current VCB=120V; IE=0 10 µA IEBO Emitter cut-off current VEB=6V; IC=0 10 mA hFE DC current gain IC=3A ; VCE=2V Transition frequency IE=-0.1A ; VCE=12V 75 MHz Collector output capacitance f=1MHz;VCB=10V 45 pF 1.0 µs 4.0 µs 1.5 µs fT COB CONDITIONS MIN TYP. MAX 80 UNIT V 2000 Switching times ton Turn-on time ts Storage time tf Fall time IC=3.0A; IB1=-IB2=10mA VCC=30V ,RL=10C 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SD2014