Inchange Semiconductor Product Specification 2SD2082 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・DARLINGTON ・Complement to type 2SB1382 APPLICATIONS ・Driver for Solenoid, Motor and General Purpose PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 120 V VCEO Collector-emitter voltage Open base 120 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 16 A ICM Collector current-peak 26 A IB Base current 1 A PC Collector power dissipation 75 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD2082 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=8A;IB=16m A 1.5 V VBEsat Base-emitter saturation voltage IC=8A;IB=16m A 2.5 V Collector-emitter breakdown voltage IC=10mA;IB=0 IEBO Emitter cut-off current VEB=6V; IC=0 10 mA ICBO Collector cut-off current VCB=120V; IE=0 10 μA hFE DC current gain IC=8 A ; VCE=4V fT Transition frequency IC=1 A ; VCE=12V 20 MHz COB Output capacitance IE=0 ; VCB=10V;f=1MHz 210 pF 0.6 μs 7.0 μs 1.5 μs V(BR)CEO 120 V 2000 Switching times ton Turn-on time ts Storage time tf Fall time IC=8A ;IB1=-IB2=16mA VCC=40V ,RL=5Ω 2 Inchange Semiconductor Product Specification 2SD2082 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3