ISC 2SB1258

Inchange Semiconductor
Product Specification
2SB1258
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220F package
・Complement to type 2SD1785
・High DC current gain
・DARLINGTON
APPLICATIONS
・Driver for solenoid ,relay and motor
and general purpose
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-100
V
VCEO
Collector-emitter voltage
Open base
-100
V
VEBO
Emitter-base voltage
Open collector
-6
V
IC
Collector current
-6
A
ICM
Collector current-peak
-10
A
IB
Base current
-1
A
PC
Collector power dissipation
30
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SB1258
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=-3A; IB=-6mA
-1.5
V
VBEsat
Base-emitter saturation voltage
IC=-3A; IB=-6mA
-2.0
V
ICBO
Collector cut-off current
VCB=-100V; IE=0
-10
μA
IEBO
Emitter cut-off current
VEB=-6V; IC=0
-10
μA
hFE
DC current gain
IC=-3A ; VCE=-2V
Transition frequency
IE=0.2A ; VCE=-12V
100
MHz
Collector output capacitance
IE=0; f=1MHz;VCB=-10V
100
pF
0.6
μs
1.6
μs
0.5
μs
fT
COB
CONDITIONS
MIN
TYP.
MAX
-100
UNIT
V
1000
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-3A; IB1=-IB2=-6mA
VCC=-30V ,RL=10Ω
2
Inchange Semiconductor
Product Specification
2SB1258
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3