SavantIC Semiconductor Product Specification 2SD2348 Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(H)IS package ·Built-in damper diode ·High voltage ,high speed ·Low saturation voltage APPLICATIONS ·Horizontal deflection output for color TV PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT V VCBO Collector-base voltage Open emitter 1500 VCEO Collector-emitter voltage Open base 600 VEBO Emitter-base voltage Open collector 5 V IC Collector current ±8 A ICM Collector current-peak ±16 A IB Base current 4 A PC Collector power dissipation 50 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SD2348 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)EBO PARAMETER CONDITIONS MIN TYP. MAX Emitter-base breakdown voltage IE=300mA , IC=0 VCEsat Collector-emitter saturation voltage IC=6A ;IB=1.2A 5.0 V VBEsat Base-emitter saturation voltage IC=6A ;IB=1.2A 1.5 V ICBO Collector cut-off current VCB=1500V; IE=0 1 mA IEBO Emitter cut-off current VEB=5V; IC=0 83 250 mA hFE-1 DC current gain IC=1A ; VCE=5V 10 hFE-2 DC current gain IC=6A ; VCE=5V 6 Transition frequency IC=0.1A ; VCE=10V 1 COB Collector output capacitance IE=0 ; VCB=10V;f=1MHz VF Diode forward voltage IF=6A ts Storage time tf Fall time fT 5 UNIT V 9 3 MHz 170 pF 1.8 V 12 µs 0.7 µs ICP=6A ;IB1=1.2A;fH=15.75kHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 2SD2348