SBAS16 High-Speed Elektronische Bauelemente Switching Diode RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free Description * The SBAS16 is designed for high-speed switching application in hybrid thick and thin-film circuits. * The devices is manufactured by the silicon epitaxial planar process and packed in a plastic surface mount package. SC-59 A L S 2 3 Top View B 1 D G J C K H Marking Dim Min Max A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.80 All Dimension in mm A6- Absolute Maximum Ratings at TA = 25 C o Parameter Symbol Ratings Reverse Voltage VR 75 V Repetitive Reverse Voltage VRR 85 V Forward Current IF 250 mA Repetitive Forward Current IFR 500 mA Forward Surge Current (1ms) IFSM 1000 mW PD 200 mW Tj, Tstg -65~+150 Total Power Dissipation Operating Junction and Storage Temperature Range Characteristics Reverse Breakdown Voltage Symbol Min. Max. Unit V(BR) 75 - V VF(1) - 715 mV IF=1mA VF(2) - 855 mV IF=10mA VF(3) - 1000 mV IF=50mA IR=100uA VF(4) - 1250 mV IF=150mA IR - 1 uA VR=75V Total Capacitance CT 2 pF VR=0, f=1MHz Reverse Recovery Time Trr 6 nS IF=IR=10mA, RL=100 01-Jun-2002 Rev. A C Test Conditions Reverse Current http://www.SeCoSGmbH.com/ o at TA = 25 Characteristic Forward Voltage Unit - measured at IR=1mA Any changing of specification will not be informed individual Page 1 of 2 SBAS16 High-Speed Elektronische Bauelemente Switching Diode Characteristics Curve http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 2