SCS202NF Dual Series Chips Surface Mount Switching Diode Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free Application A Ultra high speed switching L 3 3 1 Features 1 2 Four types of packaging are available. V 1 High speed. (trr=1.5ns Typ.) Top View B S 2 G 3 Suitable for high packing density layout. 2 C High reliability. Marking code: MU or A3 H D J K Construction Silicon epitaxial planar SOT-323(SC-70) MAXIMUM RATINGS (EACH DIODE) Dim Min Max A 1.800 2.200 B 1.150 1.350 C 0.800 1.000 Symbol Value Unit Peak reverse voltage V RM 80 V D 0.300 0.400 DC reverse voltage VR 80 V G 1.200 1.400 Peak forward current I FM 300 mA H 0.000 0.100 Io 100 mA J 0.100 0.250 4 A K 0.350 0.500 Rating Mean rectifying current Surge current 1uS I surge Power dissipation (TOTAL) Pd 200 mW Junction temperature Tj 150 ºC Storage temperature T stg -55~+155 ºC L 0.590 0.720 S 2.000 2.400 V 0.280 0.420 All Dimension in mm ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise noted) (EACH DIODE) Characteristic Forward voltage (IF = 100mA) Reverse current (VR = 70V) Capacitance between terminals (V=6V, f=1MHz) Reverse recovery time (IF=5mA,VR=6V) 1. FR– 5 = 1.0 X 0.75 X 0.062 in. http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Symbol Min Max Unit VF － 1.2 V IR － 0.1 uA CT － 3.5 pF t rr － 4 nS 2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. Any changing of specification will not be informed individual Page 1 of 3 SCS202NF Dual Series Chips Surface Mount Switching Diode Elektronische Bauelemente 10 125 REVERSE RECOVERY TIME : trr (ns) POWER DISSIPATION : Pd / Pd Max.(%) Electrical characteristic curves (Ta=25 ºC) 100 75 50 25 9 VR=6V 8 7 6 5 4 3 2 1 0 0 0 0 25 50 75 100 125 1 150 2 3 4 5 6 7 FORWARD CURRENT : IF 8 9 10 (mA) AMBIENT TEMPERATURE :Ta (ºC) 50 Ta=100°C REVERSE CURRENT : IR (nA) FORWARD CURRENT : IF (mA) 1000 20 10 5 Ta=85ºC 50ºC 25ºC 2 1 0ºC −30ºC 0.5 0.2 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 FORWARD VOLTAGE : VF 100 50°C 10 25°C 1 0°C −25°C 0.1 0.01 0 1.6 1.4 75°C 10 (V) 20 30 40 50 60 70 80 CAPACITANCE BETWEEN TERMINALS : CT (pF) Fig.2 Reverse recovery time Fig.1 Power attenuation curve Fig.4 Reverse characteristics 0.01µF 2 0 0 2 4 6 8 10 12 14 16 18 20 REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig.3 Forward characteristics f=1MHz 4 Fig.5 Capacitance between terminals characteristics D.U.T. 5Ω PULSE GENERATOR OUTPUT 50Ω 50Ω SAMPLING OSCILLOSCOPE INPUT 100ns OUTPUT trr 0.1IR IR 0 Fig.6 Reverse recovery time (trr) measurement circuit http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 3