D882 NPN Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-126 3.2±0.2 8.0±0.2 2.0±0.2 4.14±0.1 Features O2.8±0.1 11.0±0.2 O3.2±0.1 1.4±0.1 1 2 3 MAXIMUM RATINGS* TA=25 C unless otherwise noted o Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current –Continuous 3 A PC Collector Dissipation 1.25 W PD Total Device Dissipation 1.25 W TJ, Tstg Junction and Storage Temperature 1.27±0.1 15.3±0.2 0.76±0.1 2.28 Typ. 1: Emitter 2: Collector 3: Base o -55-150 0.5±0.1 4.55±0.1 C Dimensions in Millimeters *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ELECTRICAL CHARACTERISTICS(Tamb=25℃ Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=100uA ,IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 10 mA , IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE= 100 mA ,IC=0 6 V Collector cut-off current ICBO VCB=40 V , IE=0 1 uA Collector cut-off current ICEO VCE=30 V , IB=0 10 uA Emitter cut-off current IEBO VEB=6V , 1 uA hFE(1) VCE= 2V, IC= 1A 60 hFE(2) VCE=2V, IC= 100mA 32 Collector-emitter saturation voltage VCE(sat) IC=2A, IB= 0.2A 0.5 V Base-emitter saturation voltage VBE(sat) IC=2A, IB= 0.2A 1.5 V IC=0 400 DC current gain VCE=5 V, IC=0.1mA fT Transition frequency 50 f = 10MHz MHz CLASSIFICATION OF hFE(1) Rank R O Y GR Range 60-120 100-200 160-320 200-400 http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 2 D882 Elektronische Bauelemente http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A NPN Type Plastic Encapsulate Transistors Any changing of specification will not be informed individual Page 2of 2