SECOS D882

D882
NPN Type
Elektronische Bauelemente
Plastic Encapsulate Transistors
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
TO-126
3.2±0.2
8.0±0.2
2.0±0.2
4.14±0.1
Features
O2.8±0.1
11.0±0.2
O3.2±0.1
1.4±0.1
1
2
3
MAXIMUM RATINGS* TA=25 C unless otherwise noted
o
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
30
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current –Continuous
3
A
PC
Collector Dissipation
1.25
W
PD
Total Device Dissipation
1.25
W
TJ, Tstg
Junction and Storage Temperature
1.27±0.1
15.3±0.2
0.76±0.1
2.28 Typ.
1: Emitter
2: Collector
3: Base
o
-55-150
0.5±0.1
4.55±0.1
C
Dimensions in Millimeters
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
ELECTRICAL CHARACTERISTICS(Tamb=25℃
Parameter
Symbol
unless otherwise specified)
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic=100uA ,IE=0
40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= 10 mA , IB=0
30
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 100 mA ,IC=0
6
V
Collector cut-off current
ICBO
VCB=40 V , IE=0
1
uA
Collector cut-off current
ICEO
VCE=30 V , IB=0
10
uA
Emitter cut-off current
IEBO
VEB=6V ,
1
uA
hFE(1)
VCE= 2V, IC= 1A
60
hFE(2)
VCE=2V, IC= 100mA
32
Collector-emitter saturation voltage
VCE(sat)
IC=2A, IB= 0.2A
0.5
V
Base-emitter saturation voltage
VBE(sat)
IC=2A, IB= 0.2A
1.5
V
IC=0
400
DC current gain
VCE=5 V, IC=0.1mA
fT
Transition frequency
50
f = 10MHz
MHz
CLASSIFICATION OF hFE(1)
Rank
R
O
Y
GR
Range
60-120
100-200
160-320
200-400
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 2
D882
Elektronische Bauelemente
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
NPN Type
Plastic Encapsulate Transistors
Any changing of specification will not be informed individual
Page 2of 2