SCS521S Schottky Barrier Diode Elektronische Bauelemente RoHS Compliant Product . A suffix of "-C" specifies halogen & lead-free FEATURES SOD-523 Low current rectification and high speed switching CATHODE MARK .. .. 1.2±0.05 Extremely small surface mounting type. (EMD2) Io=200mA guaranteed despite the size. Low VF .(VF =0.40V Typ. At 200mA) Silicon epitaxial planer C 1.6±0.1 MECHANICAL DATA 0.3±0.05 0.12±0.05 0.8±0.05 0.6±0.1 Dimensions in millimeters MAXIMUM RATINGS (TJ = 25° °C unless otherwise noted) Rating Value Unit VR 30 Volts Io 200 mA IFSM TJ 1 Junction Temperature 125 A °C Storage Temperature Range Tstg – 40 to +125 °C DC reverse voltage Mean rectifying current Peak forward surge current Symbol ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Typ Max Unit Forward voltage ( IF = 200mA) VF – – 0.50 Volts Reverse current ( VR = 10V) IR – – 30 mA http://www.SeCoSGmbH.com 01-Jul-2009 Rev. B Any changing of specification will not be informed individua l Page 1 of 2 SCS521S Schottky Barrier Diode Elektronische Bauelemente Electrical characteristic curves (Ta=25 C) 1 10m 100m 1m REVERSE CURRENT : IR (A) °C -2 5° C °C 100µ 10µ 1µ 0 0.1 0.2 0.3 0.4 0.5 75°C 100 m 25°C 10m 1m -25 °C 100n 10n 0.6 0 10 20 30 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) Figure 1. Forward characteristics Figure 2. Reverse characteristics 100 Ta=25°C f=1MHz 50 100 Io CURRENT (%) CAPACITANCE BETWEEN TERMINALS : CT (pF) 25 1m 75 12 5° C 10m Ta = FORWARD CURRENT : IF (A) Ta=125°C 20 10 5 2 1 0 60 40 20 2 4 6 8 10 12 14 REVERSE VOLTAGE : VR (V) Fig. 3 Capacitance between terminals characteristics http://www.SeCoSGmbH.com 01-Jul-2009 Rev. A 80 0 0 25 50 75 100 125 AMBIENT TEMPERATURE : Ta (°C) Fig. 4 Derating curve (mounting on glass epoxy PCBs) Any changing of specification will not be informed individual Page 2 of 2