MMDT4403 PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 * Features .055(1.40) .047(1.20) .021REF (0.525)REF Power dissipation. PCM : 0.2 W (Temp.=25 C) O .018(0.46) .010(0.26) : - 0.6 A C2 Collector -base voltage B1 .014(0.35) .006(0.15) E1 .006(0.15) .003(0.08) .087(2.20) .079(2.00) V(BR) CBO : - 40 V Operating & storage junction temperature E2 Tj, Tstg : -55 C ~ +150 C O .053(1.35) .045(1.15) .096(2.45) .085(2.15) Collector current ICM o 8 o 0 .026TYP (0.65TYP) O B2 C1 Marking : K2T .004(0.10) .000(0.00) .043(1.10) .035(0.90) .039(1.00) .035(0.90) Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS˄Tamb=25ćunless otherwise specified˅ Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO Ic=-100µA , Collector-emitter breakdown voltage V(BR)CEO IC= -1mA , Emitter-base breakdown voltage V(BR)EBO Collector cut-off current TYP MAX UNIT -40 V IB=0 -40 V IE=-100µA, IC=0 -5 V ICBO VCB=-50 V , IE=0 -0.1 µA Collector cut-off current ICEO VCE=-35 V , IB=0 -0.1 µA Emitter cut-off current IEBO VEB=-5V , -0.1 µA hFE(1) VCE=-1 V, IC= -0.1mA 30 hFE(2) VCE=-1 V, IC= -1mA 60 hFE(3) VCE=-1 V, IC= -10mA 100 hFE(4) VCE=-2 V, IC= -150mA 100 hFE(5) VCE=-2 V, IC= -500mA 20 DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage 300 IC=-150 mA, IB=-15mA -0.4 V VCE(sat)2 IC=-500 mA, IB=-50mA -0.75 V VBE(sat)1 IC= -150 mA, IB=-15mA -0.95 V VBE(sat)2 IC= -500 mA, IB=-50mA -1.3 V fT Output Capacitance Cob Delay time td Rise time tr Storage time tS Fall time tf 01-Jan-2006 Rev.B IC=0 VCE(sat)1 Transition frequency http://www.SeCoSGmbH.com IE=0 MIN VCE= -10V, IC= -20mA f = 100MHz VCB=-10V, I E= 0 f=1MHz VCC=-30V, VBE=-2V IC=-150mA , IB1=-15mA VCC=-30V, IC=-150mA IB1= IB2= -15mA -0.75 200 MHz 8.5 pF 15 nS 20 nS 225 nS 30 nS Any changing of specification will not be informed individual Page 1 of 2 MMDT4403 Elektronische Bauelemente http://www.SeCoSGmbH.com 01-Jan-2006 Rev.B PNP Silicon Multi-Chip Transistor Any changing of specification will not be informed individual Page 2 of 2