MMDT4401 NPN Plastic-Encapsulate Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product * Features SOT-363 .055(1.40) .047(1.20) : 0.2 W (Temp.=25 C) O .018(0.46) .010(0.26) : 0.6 A C2 Collector-Base vVoltage B1 E1 .014(0.35) .006(0.15) .006(0.15) .003(0.08) .087(2.20) .079(2.00) V(BR) CBO : 60 V Operating & Storage Junction Temperature E2 B2 C1 .004(0.10) .000(0.00) .043(1.10) .035(0.90) .039(1.00) .035(0.90) Marking : K2X Tj,T stg : -55 C ~ +150 C O .053(1.35) .045(1.15) .096(2.45) .085(2.15) Collector Current ICM 8 o 0 .021REF (0.525)REF Power Dissipation. PCM o .026TYP (0.65TYP) O Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS˄Tamb=25ćunless otherwise specified˅ Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=100µA , IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 6 V Collector cut-off current ICBO VCB=50 V , IE=0 0.1 µA Collector cut-off current ICEO VCE=35 V , IB=0 0.1 µA Emitter cut-off current IEBO VEB=5V , 0.1 µA hFE(1) VCE=1 V, IC= 0.1mA 20 hFE(2) VCE=1 V, IC= 1mA 40 hFE(3) VCE=1 V, IC= 10mA 80 hFE(4) VCE=1 V, IC= 150mA 100 hFE(5) VCE=2 V, IC= 500mA 40 DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage IC=150 mA, IB=15mA 0.4 V VCE(sat)2 IC=500 mA, IB=50mA 0.75 V VBE(sat)1 IC= 150 mA, IB=15mA 0.95 V VBE(sat)2 IC= 500 mA, IB=50mA 1.2 V fT Output Capacitance Cob Delay time td Rise time tr Storage time tS Fall time tf 01-Jan-2006 Rev.B 300 VCE(sat)1 Transition frequency http://www.SeCoSGmbH.com IC=0 VCE= 10V, IC= 20mA f = 100MHz VCB=5V, IE= 0 f=1MHz VCC=30V, VBE=2V IC=150mA , IB1=15mA VCC=30V, IC=150mA IB1= IB2= 15mA 0.75 250 MHz 6.5 pF 15 nS 20 nS 225 nS 30 nS Any changing of specification will not be informed individual Page 1 of 2 MMDT4401 Elektronische Bauelemente Typical Characteristics http://www.SeCoSGmbH.com 01-Jan-2006 Rev.B NPN Plastic-Encapsulate Multi-Chip Transistor MMDT4401 Any changing of specification will not be informed individual Page 2 of 2