BUP53R MECHANICAL DATA Dimensions in mm NPN MULTI-EPITAXIAL TRANSISTOR FEATURES 25.4 (1.0) 30.15 (1.187) 10.92 (0.430) 2 16.89 (0.665) 1 1.57 (0.062) • • • • • • LOW VCE(SAT) FAST SWITCHING SINGLE CHIP COSNTRUCTION HIGH SWITCHING CURRENTS HIGH RELIABILITY MILITARY OPTIONS AVAILABLE APPLICATIONS 4.1 (0.161 +0.4 –0 +0.016 –0 4.0 ± 0.1 (0.157 ± 0.004) ) Tolerance ± 11.65 ± 0.35 (0.459 ± 0.014) 9.0 (0.354) 0.127 unless otherwise stated (0.005) • SWITCHING REGULATORS • MOTOR DRIVE CONTROL • HIGH POWER CONVERTORS TO3B Pin 1 – Base Pad 2 – Collector Pad 3 – Emitter ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCEX Collector – Emitter Voltage (VBE = –1.5V) 400V VCEO Collector – Emitter Voltage (IB = 0) 250V VEBO Emitter – Base Voltage 10V IC Collector Current 60A IC(PK) Peak Collector Current 80A Ptot Total Dissipation at Tcase = 25°C Tstg Storage Temperature TJ Maximum Operating Junction Temperature Rth Thermal Resistance (junction-case) Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 300W –55 to 200°C 200°C Max. 58°C/W Prelim. 11/98 BUP53R ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. VBE = 1.5V Typ. VCEX = 400V Max. 0.1 ICEX Collector Cut–Off Current IEBO Emitter Cut–Off Current VBE = 8V Collector – Emitter Saturation IC = 20A IB = 2A 0.4 0.6 Voltage IC = 40A IB = 8A 0.6 0.8 IC = 20A IB = 2A 1.0 1.1 IC = 40A IB = 5A 1.2 1.4 IC = 20A VCE = 4V 15 35 IC = 40A VCE = 4V 5 15 VCE(sat)* VBE(sat)* Base – Emitter Saturation Voltage hFE DC Current Gain TC = 150°C 5 0.1 Unit mA mA V V — SWITCHING CHARACTERISTICS (Tcase = 25°C unless otherwise stated) ts Storage Time tf Fall Time Semelab plc. IC = 30A VCC = 200V IB1 = –IB2 =10 A Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 1.8 0.35 mA Prelim. 11/98