BUL54ASMD ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6 (0 .0 3 0 ) m in . 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 2 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4 1 ) 9 ) 6 ) 4 ) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 ) SMD1 Package Pad 1 – Base Pad 2 – Collector Pad 3 – Emitter • SEMEFAB DESIGNED AND DIFFUSED DIE • HIGH VOLTAGE • FAST SWITCHING (tf = 40ns) • EXCEPTIONAL HIGH TEMPERATURE PERFORMANCE • HIGH ENERGY RATING • EFFICIENT POWER SWITCHING • MILITARY AND HI–REL OPTIONS FEATURES • Multi–base design for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. • Ion implant and high accuracy masking for tight control of characteristics from batch to batch. • Triple Guard Rings for improved control of high voltages. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO Collector – Base Voltage 1000V VCEO Collector – Emitter Voltage (IB = 0) 500V VEBO Emitter – Base Voltage 10V IC Collector Current 2A IC(PK) Peak Collector Current 4A IB Base Current 0.8A Ptot Total Dissipation at Tcase = 25°C 35W Derate above 25°C when used on efficient heatsink Tstg Operating and Storage Temperature Range Rth Thermal Resistance Junction – Case Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 0.2W/°C –65 to 200°C 3.5°C/W Prelim. 7/00 BUL54ASMD ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. ELECTRICAL CHARACTERISTICS VCEO(sus)* Collector – Emitter Sustaining Voltage IC = 100mA 500 V(BR)CBO* Collector – Base Breakdown Voltage IC = 1mA 1000 V(BR)EBO* Emitter – Base Breakdown Voltage IE = 1mA IC = 0 ICEO* Collector – Emitter Cut–Off Current IB = 0 VCC = 500V 100 ICBO* Collector – Base Cut–Off Current IE = 0 VCB = 1000V 10 TC = 125°C 100 IEBO* Emitter Cut–Off Current VEB = 5V 10 TC = 125°C 100 hFE* DC Current Gain IC = 0 VCE(sat)* Base – Emitter Saturation Voltage VBE(on)* Base – Emitter On Voltage 10 VCE = 4V 20 40 IC = 500mA VCE = 4V 12 18 IC = 1A VCE = 4V 5 8 TC = 125°C 4 7 m A m A m A — IB = 20mA 0.05 0.1 IB = 100mA 0.15 0.2 IC = 1A IB = 200mA 0.3 0.5 IC = 500mA IB = 100mA 0.8 1.0 IC = 1A IB = 200mA 0.9 1.1 IC = 500mA VCE = 4V 0.8 1.0 IC = 100mA VCE = 4V Collector – Emitter Saturation Voltage IC = 500mA VBE(sat)* V IC = 100mA IC = 100mA Unit V V V DYNAMIC CHARACTERISTICS fT Transition Frequency Cob Output Capacitance IS/B SECOND BREAKDOWN Second Breakdown Collector Current ton ts tf 20 f = 10MHz VCB = 20V f = 1MHz 20 IE = 0 VCE = 50V SWITCHING CHARACTERISTICS (resistive load) On Time VCC = 150V Storage Time IB1 = 0.2A Fall Time t = 1s IC = 1A IB2 = –0.4A MHz 35 pF 0.8 A 0.08 0.2 2 4 0.04 0.1 m s * Pulse test tp = 300ms , d £ 2% Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 7/00