SMX35 SMX36 SMX37 MAGNA TEC MECHANICAL DATA Dimensions in mm (inches) SILICON NPN EPITAXIAL PLANAR POWER TRANSISTOR 2.41 (0.095) 2.67 (0.105) 7.49 (0.295) 7.75 (0.305) 3.68 (0.145) 3.94 (0.155) 2.92 (0.115) 3.18 (0.125) 1.14 (0.045) 1.40 (0.055) 3.76 (0.148) 4.01 (0.158) 10.80 (0.425) 11.05 (0.435) 1 2 3 1.27 (0.050) 2.41 (0.095) 3˚ Typ. 1.02 (0.040) M in. 15.11 (0.595) 16.64 (0.655) 0.51 (0.020) 0.66 (0.026) 0.64 (0.025) 0.89 (0.035) 0.38 (0.015) 0.64 (0.025) 2.31 (0.091) 2.46 (0.097) TO 126 Package Pin 1 – Base Pin 2 – Collector Pin 3 – Emitter ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCES VCEO VEBO IC ICM IB IBM –IBM Ptot Ptot Tstg Tj Magnatec. Collector – Base Voltage (Open Emitter) Collector – Emitter Voltage (VBE = 0) Collector – Emitter Voltage (Open Base) Collector – Emitter Voltage (Open Base) Collector Current Peak Collector Current Base Current Peak Base Current Peak Reverse Base Current Power Dissipation Tamb £ 75°C Power Dissipation Tamb £ 25°C Storage Temperature Range Maximum Junction Temperature Telephone +44(0)1455 554711. Fax +44(0)1455 558843. E-mail: [email protected] Website: http://www.semelab.co.uk SMX35 100V 100V 60V SMX36 SMX37 120V 140V 120V 140V 70V 75V 5V 5A 8A 1A 2A 2A 14W 1.25W –65 to 150°C 150°C Prelim. 6/94 SMX35 SMX36 SMX37 MAGNA TEC ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise stated) Parameter Test Conditions IE = 0 ICBO Collector – Base Cut-off Current IEBO hFE VCE(sat) VBE(sat) IE = 0 VCB = 80V SMX35 Tj = 100°C SMX35 VCB = 100V SMX36/37 Tj = 100°C SMX36/37 IC = 0 VEB = 4V IC = 0 VEB = 5V DC Current Gain IC = 0.5A VCE = 10V Collector – Emitter IC = 5A IB = 0.5A IC = 7A IB = 0.7A Base – Emitter IC = 5A IB = 0.5A Saturation Voltage IC = 7A IB = 0.7A IE = Ie = 0 VCB = 10V Emitter Cut-off Current Saturation Voltage CC Collector Capacitance fT Transition Frequency Min. VCE = 5V Tamb = 25°C f = 35MHz Max. Unit 10 mA 50 mA 10 mA 50 mA 5 nA 10 mA 1 mA SMX35/36 45 150 450 SMX37 45 80 450 SMX35/37 0.9 SMX36 0.7 SMX35/37 1.2 — V V 1.6 SMX35/37 1.8 40 f = 1MHz IC = 0.5A Typ. 60 V pF MHz 100 SWITCHING CHARACTERISTICS (Between 10% and 90% levels) Parameter Test Conditions Min. Typ. Max. Unit ton Turn–On Time ICon = 1A 0.06 0.1 toff Turn–Off Time IBon = –IBoff = 0.1A 0.6 0.8 ton Turn–On Time ICon = 2A toff Turn–Off Time IBon = –IBoff = 0.2A ton Turn–On Time toff Turn–Off Time ms 80 ns 0.45 0.7 ms ICon = 5A 180 300 IBon = IBoff = 0.5A 320 500 ns THERMAL RESISTANCE Parameter Rqj–mb Rqja Test Conditions Thermal Resistance Junction to Mounting Base Thermal Resistance Junction to Ambient in free air Magnatec. Telephone +44(0)1455 554711. Fax +44(0)1455 558843. E-mail: [email protected] Website: http://www.semelab.co.uk Min. Typ. Max. Unit 5 K/W 100 K/W Prelim. 6/94