BSV64 MECHANICAL DATA Dimensions in mm (inches) SILICON NPN PLANAR TRANSISTOR 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) FEATURES 12.70 (0.500) min. 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. • VCBO = 100V • VCEO = 60V • IC = 2A 5.08 (0.200) typ. 2.54 (0.100) 2 1 3 0.66 (0.026) 1.14 (0.045) DESCRIPTION 0.71 (0.028) 0.86 (0.034) 45˚ General Purpose NPN Transistor in a Hermetic TO39 Package TO39 PACKAGE Underside View Pin 1 = Emitter Pin 2 = Base Pin 3 = Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCER VCEO VEBO IC ICM IB PTOT Tstg, Tj Rthj-c Semelab plc. Collector – Base Voltage (open emitter) Collector – Emitter Voltage (RBE £ 50W) Collector – Emitter Voltage (open base) Emitter – Base Voltage (open collector) Collector Current (d.c.) Collector Current (peak value) Base Current (d.c.) Total Device Dissipation @ TC = 50°C Storage Temperature Junction Temperature Thermal Resistance Junction to Case Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 100V 80V 60V 5V 2A 5A 1A 5W –55 to 175°C 175°C / W 25°C / W Prelim.12/99 BSV64 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit VCEsat Collector – Base Saturation Voltage IC = 5A IB = 5A 1 VBEsat Emitter – Base Saturation Voltage IC = 5A IB = 5A 1.8 ICBO Collector Cut-off Current VCB = 60V IE = 0 10 IEBO Emitter Cut-off Current VEB = 4V IC = 0 10 hFE DC Current Gain VCE = - 5V IC = 2A cc Collector Capacitance at f = 1MHz IE = Ie fT Transistion Frequency at f = 35MHz IC = 0.5A ton Turn on Time ICon = 5A; IBon = -IBoff = 0.5A 0.6 toff Turn off time -VBEoff = 2V 1.2 Semelab plc. =0 40 Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk mA — VCB =10V VCE =5V V 80 100 pF MHz ms Prelim.12/99