KSH882 2 KSH882 ◎ SEMIHOW REV.A2,Mar 2008 KSH882 2 KSH882 Audio Frequency Power Amplifier - Low Speed Switching - Complement to KSH772 Absolute Maximum Ratings 3 Amperes NPN Epitaxial Silicon Transistor 1 Watts TC=25℃ unless otherwise noted CHARACTERISTICS SYMBOL RATING UNIT VCBO VCEO VEBO IC ICP IB PC PC TJ TSTG 40 30 5 3 7 0.6 10 1 150 -55~150 V V V A A A W W ℃ ℃ Collector-Base Voltage Collector-Emitter Collector Emitter Voltage Emitter-Base Voltage Collector Current(DC) *Collector Current(Pulse) Base Current Collector Dissipation(Tc=25℃) Collector Dissipation(Tc=25℃) Junction Temperature Storage Temperature TO-126 1. Emitter 2. Collector 3. Base 1 2 3 *Plus Width≤10ms, Duty≤50% Electrical Characteristics CHARACTERISTICS TC=25℃ unless otherwise noted SYMBOL Test Condition Min Typ. Max Unit Collector Cut-off Current ICBO VCB=30V,IE=0 1 ㎂ Emitter Cut-off Current IEBO VEB=3V,IC=0 1 ㎂ *DC Current Gain hFE1 hFE2 VCE=2V,IC=20mA VCE=2V,I 2V,IC=1A 1A *Collector-Emitter Saturation Voltage VCE(sat) *Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance 150 160 400 IC=2A,IB=0.2mA 0.3 0.5 V VBE(sat) IC=2A,IB=0.2mA 1.0 2.0 V fT VCE=5V,IC=0.1A 90 ㎒ VCB=10V,IE=0 F=1MHz 45 ㎊ Cob 30 60 * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% Note. hFE2 Classification Package Mark information. R 60 ~ 120 O 100 ~ 200 Y 160 ~ 320 G 250 ~ 500 S S YWWH Y K S H 88 2 YWW SemiHow Logo Y; year code, WW; week code H Assembly code Y hFE2 Classification ◎ SEMIHOW REV.A2,Mar 2008 KSH882 2 Typical Characteristics ◎ SEMIHOW REV.A2,Mar 2008 KSH882 2 Typical Characteristics ( Continued ) ◎ SEMIHOW REV.A2,Mar 2008 KSH882 2 Package Dimension TOTO -126 8.5max 0.2 2.8max 12max 3.8±0.2 ± .2 3 φ 13max 1.2±0.2 2.5±0.2 1 27typ 1.27typ 0.78±0.08 2.3max 0.5±0.1 2.3max ◎ SEMIHOW REV.A2,Mar 2008