SIRECTIFIER MBR1060CT

MBR1050CT thru MBR1060CT
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
A
C
A
Dimensions TO-220AB
A
C
A
C(TAB)
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
A=Anode, C=Cathode, TAB=Cathode
MBR1050CT
MBR1060CT
VRRM
V
50
60
VRMS
V
35
42
Symbol
VDC
V
50
60
Characteristics
10
A
125
A
10000
V/us
IF=5A @TJ=25oC
IF=5A @TJ=125oC
IF=10A @TJ=125oC
0.65
0.80
0.90
V
@TJ=25oC
@TJ=125oC
0.1
15
mA
@TC=105oC
IFSM
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
Voltage Rate Of Change (Rated VR)
VF
IR
Maximum DC Reverse Current
At Rated DC Blocking Voltage
Typical Thermal Resistance (Note 2)
3.0
CJ
Typical Junction Capacitance Per Element (Note 3)
220
TJ
Operating Temperature Range
ROJC
TSTG
Milimeter
Min.
Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54
4.08
5.85
6.85
2.54
3.18
1.15
1.65
2.79
5.84
0.64
1.01
2.54
BSC
4.32
4.82
1.14
1.39
0.35
0.56
2.29
2.79
Unit
Maximum Average Forward Rectified Current
Maximum Forward
Voltage (Note 1)
Inches
Min.
Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100
BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Maximum Ratings
I(AV)
dv/dt
Dim.
Storage Temperature Range
o
C/W
pF
-55 to +150
o
-55 to +175
o
NOTES: 1. 300us Pulse Width, Duty Cycle 2%.
2. Thermal Resistance Junction To Case.
3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
FEATURES
MECHANICAL DATA
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low VF
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
* Case: TO-220AB molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any
C
C
MBR1050CT thru MBR1060CT
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
12
8
4
0
RESISTIVE OR
INDUCTIVE LOAD
25
50
75
100
125
150
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD CURRENT
AMPERES
FIG.1 - FORWARD CURRENT DERATING CURVE
16
175
150
125
100
75
50
25
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
0
1
2
5
CASE TEMPERATURE , C
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
50
100
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
INSTANTANEOUS FORWARD CURRENT ,(A)
100
10
TJ = 125 C
1.0
0.1
0.01
TJ = 25 C
0.001
10
1.0
TJ = 25 C
PULSE WIDTH 300us
2% Duty cycle
0.1
0
20
40
60
80
100
140
120
0.1
0.2
0.3
0.4
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
MBR1030CT ~ MBR1045CT
100
MBR1050CT ~ MBR1060CT
TJ = 25 C, f= 1MHz
10
0.1
1
0.5
0.6
0.7
0.8
0.9
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%)
CAPACITANCE , (pF)
INSTANTANEOUS REVERSE CURRENT ,(mA)
20
10
NUMBER OF CYCLES AT 60Hz
4
10
REVERSE VOLTAGE , VOLTS
100
1.0