High Power SPDT Switch CXG1189UR Description The CXG1189UR is a high power SPDT (Single Pole Dual Throw) switch MMIC used in wireless communication systems, for example, GSM handsets, GSM/UMTS dual mode handsets. The Sony JPHEMT process is used for low insertion loss. (Applications: Antenna switch for cellular handsets, GSM, GSM/UMTS dual mode) Features Low insertion loss: 0.2dB@900MHz, [email protected], [email protected] Low harmonics level: –35dBm (Max.) Package Small package size: 12-pin UQFN Structure GaAs JPHEMT MMIC Absolute Maximum Ratings (Ta = 25°C) Control voltage Vctl 5 V Input power max. [824 to 915MHz] 37 dBm Input power max. [1710 to 1910MHz] 35 dBm Input power max. [1920 to 1980MHz] 33 dBm Operating temperature Topr –35 to +85 °C Storage temperature Tstg –60 to +150 °C This IC is ESD sensitive device. Special handling precautions are required. Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. -1- E05305-PS CXG1189UR Block Diagram and Recommended Circuit RF1 GND GND CRF 6 5 4 7 GND 3 F1 F2 8 RF2 GND 2 RF3 CRF CRF F3 F4 9 GND 1 10 Rctl (1kΩ) 11 GND 12 Cbypass (100pF) Cbypass (100pF) Rctl (1kΩ) CTLA CTLB GND When using this IC, the following external components should be used: Rctl: This resistor is used to improve ESD performance. 1kΩ is recommended CRF: This capacitor is used for RF decoupling and must be used for all applications. Cbypass: This capacitor is used for DC line filtering. 100pF is recommended. Truth Table CTLA CTLB ON State F1 F2 F3 F4 L H RF1 – RF2 ON OFF OFF ON H L RF1 – RF3 OFF ON ON OFF DC Bias Condition (Ta = 25°C) Item Min. Typ. Max. Unit Vctl (H) 2.6 2.8 3.6 V Vctl (L) 0 — 0.4 V -2- CXG1189UR Electrical Characteristics (Ta = 25°C) Item Symbol Path RF1 – RF2 Insertion loss IL RF1 – RF3 Harmonics*1 2fo 3fo 2fo 3fo P1dB compression input power Control current P1dB Ictl Unit 824 to 960MHz 0.20 0.30 dB 1710 to 1990MHz 0.25 0.35 dB 1920 to 2170MHz 0.30 0.40 dB 824 to 960MHz 0.20 0.30 dB 1710 to 1990MHz 0.25 0.35 dB 1920 to 2170MHz 0.30 0.40 dB dB 1710 to 1990MHz 25 31 dB 1920 to 2170MHz 25 30 dB 824 to 960MHz 25 32 dB 1710 to 2170MHz 25 31 dB 1920 to 2170MHz 25 30 dB 824 to 960MHz 1.2 — 1710 to 2170MHz 1.2 — 1920 to 2170MHz 1.2 — RF1 – RF2 RF1 – RF3 824 to 915MHz Vctl = 2.8/0V –39 –35 dBm –40 –35 dBm RF1 – RF2 RF1 – RF3 1710 to 1910MHz Vctl = 2.8/0V –38 –35 dBm –37 –35 dBm RF1 – RF2 RF1 – RF3 1920 to 1980MHz Vctl = 2.8/0V –38 –35 dBm –42 –35 dBm RF1 – RF2 RF1 – RF3 824 to 915MHz Vctl = 2.8/0V 37 dBm RF1 – RF2 RF1 – RF3 1710 to 1910MHz Vctl = 2.8/0V 34 dBm RF1 – RF2 RF1 – RF3 1920 to 1980MHz Vctl = 2.8/0V 32 dBm VSWR 3fo Max. 32 ISO. 2fo Typ. 25 RF1 – RF3 VSWR Min. 824 to 960MHz RF1 – RF2 Isolation Condition Vctl = 2.8V 2 6 µA Electrical characteristics are measured with all RF ports terminated in 50Ω. *1 Harmonics measured with Tx inputs harmonically matched. The use of harmonic matching is recommended to ensure optimum performance. 1. Power incident on Tx, Pin = 34dBm, 824 to 915MHz, Vctl (H) = 2.8V, Vctl (L) = 0V 2. Power incident on Tx, Pin = 32dBm, 1710 to 1910MHz, Vctl (H) = 2.8V, Vctl (L) = 0V 3. Power incident on Tx, Pin = 29dBm, 1920 to 1980MHz, Vctl (H) = 2.8V, Vctl (L) = 0V -3- CXG1189UR Package Outline (Unit: mm) 12PIN UQFN (PLASTIC) x4 0.1 2.0 S C 0.4 ± 0.1 0.55 ± 0.05 0.6 9 A-B 4-R0.2 C 7 6 12 4 B 2.0 10 A 1 0. 0.14 26 3 0.4 0.18 PIN 1 INDEX 0.07 0.25 0.05 M S C A-B 0.05 S MAX0.02 S Solder Plating + 0.09 0.25 – 0.03 + 0.09 0.14 – 0.03 S TERMINAL SECTION PACKAGE STRUCTURE Note:Cutting burr of lead are 0.05mm MAX. PACKAGE MATERIAL EPOXY RESIN LEAD TREATMENT SOLDER PLATING EIAJ CODE LEAD MATERIAL COPPER ALLOY JEDEC CODE PACKAGE MASS 0.01g SONY CODE UQFN-12P-01 LEAD PLATING SPECIFICATIONS ITEM LEAD MATERIAL -4- SPEC. COPPER ALLOY SOLDER COMPOSITION Sn-Bi Bi:1-4wt% PLATING THICKNESS 5-18µm Sony Corporation